QFN Package INA210, INA211 INA212, INA213 INA214 SC70 Package www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series Current-Shunt Monitor Check for Samples: INA210, INA211, INA212, INA213, INA214 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • • • WIDE COMMON-MODE RANGE: –0.3V to 26V OFFSET VOLTAGE: ±35μV (Max, INA210) (Enables shunt drops of 10mV full-scale) ACCURACY: – ±1% Gain Error (Max over temperature) – 0.5μV/°C Offset Drift (Max) – 10ppm/°C Gain Drift (Max) CHOICE OF GAINS: – INA210: 200V/V – INA211: 500V/V – INA212: 1000V/V – INA213: 50V/V – INA214: 100V/V QUIESCENT CURRENT: 100μA (max) SC70 PACKAGE: All Models THIN QFN PACKAGE: INA210, INA213, INA214 REF INA21x GND +2.7V to +26V The INA210, INA211, INA212, INA213, and INA214 are voltage output current shunt monitors that can sense drops across shunts at common-mode voltages from –0.3V to 26V, independent of the supply voltage. Five fixed gains are available: 50V/V, 100V/V, 200V/V, 500V/V, or 1000V/V. The low offset of the Zerø-Drift architecture enables current sensing with maximum drops across the shunt as low as 10mV full-scale. These devices operate from a single +2.7V to +26V power supply, drawing a maximum of 100μA of supply current. All versions are specified over the extended operating temperature range (–40°C to +125°C), and offered in an SC70 package. The INA210, INA213, and INA214 are also offered in a thin QFN package. R1 R3 R2 R4 IN- IN+ SC70 Load Output OUT V+ CBYPASS 0.01mF to 0.1mF DESCRIPTION RSHUNT Supply Reference Voltage NOTEBOOK COMPUTERS CELL PHONES TELECOM EQUIPMENT POWER MANAGEMENT BATTERY CHARGERS WELDING EQUIPMENT PRODUCT GAIN R3 and R4 R1 and R2 INA210 INA211 INA212 INA213 INA214 200 500 1000 50 100 5kW 2kW 1kW 20kW 10kW 1MW 1MW 1MW 1MW 1MW 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2008–2013, Texas Instruments Incorporated INA210, INA211 INA212, INA213 INA214 SBOS437E – MAY 2008 – REVISED JUNE 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION (1) GAIN PACKAGE PACKAGE DESIGNATOR 200V/V SC70-6 DCK 200V/V Thin QFN-10 RSW 200V/V SC70-6 DCK 200V/V Thin QFN-10 RSW INA211A 500V/V SC70-6 DCK INA211B 500V/V SC70-6 DCK INA212A 1000V/V SC70-6 DCK INA212B 1000V/V SC70-6 DCK PRODUCT INA210A INA210B INA213A INA213B INA214A INA214B (1) 50V/V SC70-6 DCK 50V/V Thin QFN-10 RSW 50V/V SC70-6 DCK RSW 50V/V Thin QFN-10 100V/V SC70-6 DCK 100V/V Thin QFN-10 RSW 100V/V SC70-6 DCK 100V/V Thin QFN-10 RSW For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the device product folder at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range, unless otherwise noted. Supply Voltage Analog Inputs, VIN+, VIN– (2) Differential (VIN+)–(VIN–) Common-Mode (3) REF Input Output (3) INA210, INA211, INA212, INA213, INA214 UNIT +26 V –26 to +26 V GND–0.3 to +26 V GND–0.3 to (V+) + 0.3 V GND–0.3 to (V+) + 0.3 V 5 mA Operating Temperature –55 to +150 °C Storage Temperature –65 to +150 °C Junction Temperature +150 °C Human Body Model (HBM) 4000 V Charged-Device Model (CDM) 1000 V Machine Model (MM) 200 V Human Body Model (HBM) 1500 V Charged-Device Model (CDM) 1000 V Machine Model (MM) 100 V Input Current into Any Pin (3) ESD Ratings (version A): ESD Ratings (version B): (1) (2) (3) 2 Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively. Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA. Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA210, INA211 INA212, INA213 INA214 www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 ELECTRICAL CHARACTERISTICS Boldface limits apply over the specified temperature range, TA = –40°C to +125°C. At TA = +25°C, VSENSE = VIN+ – VIN–. INA210, INA213, and INA214: VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INA211 and INA212: VS = +12V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INA210, INA211, INA212, INA213, INA214 PARAMETER CONDITIONS MIN Version A Version B TYP MAX UNIT –0.3 26 V –0.1 26 V INPUT Common-Mode Input Range Common-Mode Rejection VCM CMR VIN+ = 0V to +26V, VSENSE = 0mV INA210, INA211, INA212, INA214 INA213 Offset Voltage, RTI (1) VOS 105 140 dB 100 120 dB VSENSE = 0mV ±0.55 ±35 μV INA213 ±5 ±100 μV INA214 ±1 ±60 μV 0.1 0.5 μV/°C ±0.1 ±10 μV/V 28 35 μA INA210, INA211, INA212 vs Temperature dVOS/dT vs Power Supply PSR Input Bias Current Input Offset Current VS = +2.7V to +18V, VIN+ = +18V, VSENSE = 0mV IB VSENSE = 0mV IOS VSENSE = 0mV 15 ±0.02 μA OUTPUT Gain, INA210 200 V/V INA211 G 500 V/V INA212 1000 V/V INA213 50 V/V INA214 100 Gain Error VSENSE = –5mV to 5mV vs Temperature V/V ±0.02 ±1 % 3 10 ppm/°C Nonlinearity Error VSENSE = –5mV to 5mV ±0.01 % Maximum Capacitive Load No sustained oscillation 1 nF VOLTAGE OUTPUT (2) RL = 10kΩ to GND Swing to V+ Power-Supply Rail Swing to GND (V+)–0.05 (V+)–0.2 V (VGND)+0.005 (VGND)+0.05 V FREQUENCY RESPONSE Bandwidth Slew Rate GBW CLOAD = 10pF, INA210 14 kHz CLOAD = 10pF, INA211 7 kHz CLOAD = 10pF, INA212 4 kHz CLOAD = 10pF, INA213 80 kHz CLOAD = 10pF, INA214 30 kHz 0.4 V/μs 25 nV/√Hz SR NOISE, RTI (1) Voltage Noise Density (1) (2) RTI = referred-to-input. See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 10). Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA210 INA211 INA212 INA213 INA214 3 INA210, INA211 INA212, INA213 INA214 SBOS437E – MAY 2008 – REVISED JUNE 2013 www.ti.com ELECTRICAL CHARACTERISTICS (continued) Boldface limits apply over the specified temperature range, TA = –40°C to +125°C. At TA = +25°C, VSENSE = VIN+ – VIN–. INA210, INA213, and INA214: VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INA211 and INA212: VS = +12V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INA210, INA211, INA212, INA213, INA214 PARAMETER CONDITIONS MIN TYP MAX UNIT POWER SUPPLY Operating Voltage Range VS Quiescent Current +2.7 IQ VSENSE = 0mV 65 Over Temperature +26 V 100 μA 115 μA TEMPERATURE RANGE Specified Range –40 +125 °C Operating Range –55 +150 °C θ JA Thermal Resistance SC70 250 °C/W Thin QFN 80 °C/W PIN CONFIGURATIONS DCK PACKAGE SC70-6 (TOP VIEW) REF 1 6 OUT GND 2 5 IN- V+ 3 4 IN+ RSW PACKAGE THIN QFN-10 (TOP VIEW) NC REF 8 GND 9 OUT 10 (1) 7 6 1 NC V+ (1) 2 5 IN- 4 IN- 3 IN+ IN+ (1) NC denotes no internal connection. Pin can be left floating or connected to any voltage between V– and V+. 4 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA210, INA211 INA212, INA213 INA214 www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 TYPICAL CHARACTERISTICS The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INPUT OFFSET VOLTAGE PRODUCTION DISTRIBUTION OFFSET VOLTAGE vs TEMPERATURE 100 80 Population Offset Voltage (mV) 60 40 20 0 -20 -40 -60 30 35 20 25 15 5 10 0 -5 -10 -15 -20 -25 -30 -35 -80 -100 -50 -25 0 25 50 75 100 125 150 Temperature (°C) Offset Voltage (mV) Figure 1. Figure 2. COMMON-MODE REJECTION PRODUCTION DISTRIBUTION COMMON-MODE REJECTION RATIO vs TEMPERATURE 5 4 Population CMRR (mV/V) 3 2 1 0 -1 -2 -3 -4 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5 -50 -25 0 25 50 75 100 125 150 100 125 150 Temperature (°C) Common-Mode Rejection Ratio (mV/V) Figure 3. Figure 4. GAIN ERROR PRODUCTION DISTRIBUTION GAIN ERROR vs TEMPERATURE 1.0 20 Typical Units Shown 0.8 Population Gain Error (%) 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.8 Gain Error (%) -1.0 -50 -25 0 25 Figure 5. Copyright © 2008–2013, Texas Instruments Incorporated 50 75 Temperature (°C) Figure 6. Submit Documentation Feedback Product Folder Links: INA210 INA211 INA212 INA213 INA214 5 INA210, INA211 INA212, INA213 INA214 SBOS437E – MAY 2008 – REVISED JUNE 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. GAIN vs FREQUENCY POWER-SUPPLY REJECTION RATIO vs FREQUENCY 160 70 INA211 60 140 50 120 |PSRR| (dB) Gain (dB) INA212 40 30 INA213 INA214 INA210 20 80 60 VS = +5V + 250mV Sine Disturbance VCM = 0V VDIF = Shorted VREF = 2.5V 40 10 VCM = 0V VDIF = 15mVPP Sine 0 -10 10 160 100 20 0 1k 10k 100k 1M 1 10M COMMON-MODE REJECTION RATIO vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT Output Voltage Swing (V) 60 VS = +5V VCM = 1V Sine VDIF = Shorted VREF = 2.5V 1 10 100 1k 10k 100k V+ (V+) - 0.5 (V+) - 1 (V+) - 1.5 (V+) - 2 (V+) - 2.5 (V+) - 3 VS = 2.7V to 26V VS = 2.7V GND + 3 GND + 2.5 GND + 2 GND + 1.5 GND + 1 GND + 0.5 GND 1M TA = -40C TA = +25C TA = +125C VS = 2.7V to 26V 0 5 10 15 20 25 30 35 40 Output Current (mA) Figure 9. Figure 10. INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE with SUPPLY VOLTAGE = +5V INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE with SUPPLY VOLTAGE = 0V (Shutdown) 50 30 25 40 IB+, IB-, VREF = 0V Input Bias Current (mA) Input Bias Current (mA) 100k VS = 5V to 26V Frequency (Hz) 30 20 IB+, IB-, VREF = 2.5V 10 0 IB+, IB-, VREF = 0V and IB-, VREF = 2.5V 20 15 10 5 IB+, VREF = 2.5V 0 -10 -5 0 6 10k Figure 8. 80 0 1k Figure 7. 100 20 100 Frequency (Hz) 120 40 10 Frequency (Hz) 140 |CMRR| (dB) 100 5 10 15 20 25 30 0 5 10 15 20 Common-Mode Voltage (V) Common-Mode Voltage (V) Figure 11. Figure 12. Submit Documentation Feedback 25 30 Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA210, INA211 INA212, INA213 INA214 www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 TYPICAL CHARACTERISTICS (continued) The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INPUT BIAS CURRENT vs TEMPERATURE QUIESCENT CURRENT vs TEMPERATURE 35 100 90 Quiescent Current (mA) Input Bias Current (mA) 30 25 20 15 10 5 70 60 50 40 30 20 10 -25 0 25 50 75 100 125 25 50 75 100 Temperature (°C) Figure 13. Figure 14. INPUT-REFERRED VOLTAGE NOISE vs FREQUENCY 0.1Hz to 10Hz VOLTAGE NOISE (Referred-to-Input) INA213 INA214 INA210 VS = ±2.5V VREF = 0V VIN-, VIN+ = 0V 100 125 150 INA212 INA211 10 10 0 -25 Temperature (°C) 100 1 0 -50 150 Referred-to-Input Voltage Noise (200nV/div) 0 -50 Input-Reffered Voltage Noise (nV/Öz) 80 1k 10k VS = ±2.5V VCM = 0V VDIF = 0V VREF = 0V Time (1s/div) 100k Figure 16. STEP RESPONSE (10mVPP Input Step) COMMON-MODE VOLTAGE TRANSIENT RESPONSE 2VPP Output Signal 10mVPP Input Signal Time (100ms/div) Common-Mode Voltage (1V/div) Input Voltage (5mV/diV) Figure 15. Common Voltage Step 0V Output Voltage 0V Time (50ms/div) Figure 17. Copyright © 2008–2013, Texas Instruments Incorporated Output Voltage (40mV/div) Output Voltage (0.5V/diV) Frequency (Hz) Figure 18. Submit Documentation Feedback Product Folder Links: INA210 INA211 INA212 INA213 INA214 7 INA210, INA211 INA212, INA213 INA214 SBOS437E – MAY 2008 – REVISED JUNE 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) The INA210 is used for typical characteristics at TA = +25°C, VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INVERTING DIFFERENTIAL INPUT OVERLOAD NONINVERTING DIFFERENTIAL INPUT OVERLOAD Noninverting Input Overload 2V/div 2V/div Inverting Input Overload Output Output 0V 0V VS = 5V, VCM = 12V, VREF = 2.5V VS = 5V, VCM = 12V, VREF = 2.5V Time (250ms/div) Time (250ms/div) Figure 19. Figure 20. START-UP RESPONSE BROWNOUT RECOVERY Supply Voltage 1V/div 1V/div Supply Voltage Output Voltage Output Voltage 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V 8 0V VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V Time (100ms/div) Time (100ms/div) Figure 21. Figure 22. Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA210, INA211 INA212, INA213 INA214 www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 APPLICATION INFORMATION BASIC CONNECTIONS Figure 23 shows the basic connections of the INA210-INA214. The input pins, IN+ and IN–, should be connected as closely as possible to the shunt resistor to minimize any resistance in series with the shunt resistance. REF GND +2.7V to +26V RSHUNT Supply Reference Voltage INA21x OUT R1 R3 R2 R4 Load Output IN- IN+ V+ CBYPASS 0.01mF to 0.1mF Figure 23. Typical Application Power-supply bypass capacitors are required for stability. Applications with noisy or high impedance power supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors close to the device pins. On the RSW package, two pins are provided for each input. These pins should be tied together (that is, tie IN+ to IN+ and tie IN– to IN–). POWER SUPPLY The input circuitry of the INA210-INA214 can accurately measure beyond its power-supply voltage, V+. For example, the V+ power supply can be 5V, whereas the load power supply voltage can be as high as +26V. However, the output voltage range of the OUT terminal is limited by the voltages on the power-supply pin. Note also that the INA210-INA214 can withstand the full –0.3V to +26V in the input pins, regardless of whether the device has power applied or not. SELECTING RS The zero-drift offset performance of the INA210-INA214 offers several benefits. Most often, the primary advantage of the low offset characteristic enables lower full-scale drops across the shunt. For example, nonzero-drift current shunt monitors typically require a full-scale range of 100mV. The INA210-INA214 series gives equivalent accuracy at a full-scale range on the order of 10mV. This accuracy reduces shunt dissipation by an order of magnitude with many additional benefits. Alternatively, there are applications that must measure current over a wide dynamic range that can take advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower gain INA213 or INA214 to accommodate larger shunt drops on the upper end of the scale. For instance, an INA213 operating on a 3.3V supply could easily handle a full-scale shunt drop of 60mV, with only 100μV of offset. Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA210 INA211 INA212 INA213 INA214 9 INA210, INA211 INA212, INA213 INA214 SBOS437E – MAY 2008 – REVISED JUNE 2013 www.ti.com UNIDIRECTIONAL OPERATION Unidirectional operation allows the INA210-INA214 to measure currents through a resistive shunt in one direction. The most frequent case of unidirectional operation sets the output at ground by connecting the REF pin to ground. In unidirectional applications where the highest possible accuracy is desirable at very low inputs, bias the REF pin to a convenient value above 50mV to get the device output swing into the linear range for zero inputs. A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply; in this case, the quiescent output for zero input is at quiescent supply. This configuration would only respond to negative currents (inverted voltage polarity at the device input). BIDIRECTIONAL OPERATION Bidirectional operation allows the INA210-INA214 to measure currents through a resistive shunt in two directions. In this case, the output can be set anywhere within the limits of what the reference inputs allow (that is, between 0V to V+). Typically, it is set at half-scale for equal range in both directions. In some cases, however, it is set at a voltage other than half-scale when the bidirectional current is nonsymmetrical. The quiescent output voltage is set by applying voltage to the reference input. Under zero differential input conditions the output assumes the same voltage as is applied to the reference input. INPUT FILTERING An obvious and straightforward filtering location is at the device output. However, this location negates the advantage of the low output impedance of the internal buffer. The only other filtering option is at the device input pins. This location, though, does require consideration of the ±30% tolerance of the internal resistances. Figure 24 shows a filter placed at the inputs pins. V+ VCM RS < 10W RINT VOUT RSHUNT CF Bias RS < 10W VREF RINT Load Figure 24. Filter at Input Pins The addition of external series resistance, however, creates an additional error in the measurement so the value of these series resistors should be kept to 10Ω or less if possible to reduce impact to accuracy.. The internal bias network shown in Figure 24 present at the input pins creates a mismatch in input bias currents when a differential voltage is applied between the input pins. If additional external series filter resistors are added to the circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This mismatch creates a differential error voltage that subtracts from the voltage developed at the shunt resistor. This error results in a voltage at the device input pins that is different than the voltage developed across the shunt resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on device operation. The amount of error these external filter resistor add to the measurement can be calculated using Equation 2 where the gain error factor is calculated using Equation 1. 10 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA210, INA211 INA212, INA213 INA214 www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 The amount of variance in the differential voltage present at the device input relative to the voltage developed at the shunt resistor is based both on the external series resistance value as well as the internal input resistors, R3 and R4 (or RINT as shown in Figure 24). The reduction of the shunt voltage reaching the device input pins appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be calculated to determine the amount of gain error that is introduced by the addition of external series resistance. The equation used to calculate the expected deviation from the shunt voltage to what is seen at the device input pins is given in Equation 1: (1250 ´ RINT) Gain Error Factor = (1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT) where: RINT is the internal input resistor (R3 and R4), and RS is the external series resistance. (1) With the adjustment factor equation including the device internal input resistance, this factor varies with each gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2. Table 1. Input Resistance PRODUCT GAIN RINT (kΩ) INA210 200 5 INA211 500 2 INA212 1000 1 INA213 50 20 INA214 100 10 Table 2. Device Gain Error Factor PRODUCT SIMPLIFIED GAIN ERROR FACTOR INA210 1000 RS + 1000 10,000 INA211 (13 ´ RS) + 10,000 5000 INA212 (9 ´ RS) + 5000 20,000 INA213 (17 ´ RS) + 20,000 10,000 INA214 (9 ´ RS) + 10,000 The gain error that can be expected from the addition of the external series resistors can then be calculated based on Equation 2: Gain Error (%) = 100 - (100 ´ Gain Error Factor) (2) For example, using an INA212 and the corresponding gain error equation from Table 2, a series resistance of 10Ω results in a gain error factor of 0.982. The corresponding gain error is then calculated using Equation 2, resulting in a gain error of approximately 1.77% solely because of the external 10Ω series resistors. Using an INA213 with the same 10Ω series resistor results in a gain error factor of 0.991 and a gain error of 0.84% again solely because of these external resistors. Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA210 INA211 INA212 INA213 INA214 11 INA210, INA211 INA212, INA213 INA214 SBOS437E – MAY 2008 – REVISED JUNE 2013 www.ti.com SHUTTING DOWN THE INA210-INA214 SERIES While the INA210-INA214 series does not have a shutdown pin, its low power consumption allows powering from the output of a logic gate or transistor switch that can turn on and turn off the INA210-INA214 power-supply quiescent current. However, in current shunt monitoring applications. there is also a concern for how much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified schematic of the INA210-INA214 in shutdown mode shown in Figure 25. Shutdown Control RSHUNT Supply Reference Voltage REF INA21x GND 1MW R3 1MW R4 Output OUT IN- IN+ V+ CBYPASS Load PRODUCT R3 and R4 INA210 INA211 INA212 INA213 INA214 5kW 2kW 1kW 20kW 10kW NOTE: 1MW paths from shunt inputs to reference and INA21x outputs. Figure 25. Basic Circuit for Shutting Down INA210-INA214 with Grounded Reference Note that there is typically slightly more than 1MΩ impedance (from the combination of 1MΩ feedback and 5kΩ input resistors) from each input of the INA210-INA214 to the OUT pin and to the REF pin. The amount of current flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is grounded, the calculation of the effect of the 1MΩ impedance from the shunt to ground is straightforward. However, if the reference or op amp is powered while the INA210-INA214 is shut down, the calculation is direct; instead of assuming 1MΩ to ground, however, assume 1MΩ to the reference voltage. If the reference or op amp is also shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is required. For instance, if the reference source behaves as an open circuit when it is unpowered, little or no current flows through the 1MΩ path. Regarding the 1MΩ path to the output pin, the output stage of a disabled INA210-INA214 does constitute a good path to ground; consequently, this current is directly proportional to a shunt common-mode voltage impressed across a 1MΩ resistor. As a final note, when the device is powered up, there is an additional, nearly constant, and well-matched 25μA that flows in each of the inputs as long as the shunt common-mode voltage is 3V or higher. Below 2V commonmode, the only current effects are the result of the 1MΩ resistors. 12 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA210, INA211 INA212, INA213 INA214 www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 REF INPUT IMPEDANCE EFFECTS As with any difference amplifier, the INA210-INA214 series common-mode rejection ratio is affected by any impedance present at the REF input. This concern is not a problem when the REF pin is connected directly to most references or power supplies. When using resistive dividers from the power supply or a reference voltage, the REF pin should be buffered by an op amp. In systems where the INA210-INA214 output can be sensed differentially, such as by a differential input analogto-digital converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can be cancelled. Figure 26 depicts a method of taking the output from the INA210-INA214 by using the REF pin as a reference. RSHUNT Supply Load ADC +2.7V to +26V REF INA21x GND R1 R3 R2 R4 OUT Output IN- IN+ V+ CBYPASS 0.01mF to 0.1mF Figure 26. Sensing INA210-INA214 to Cancel Effects of Impedance on the REF Input Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA210 INA211 INA212 INA213 INA214 13 INA210, INA211 INA212, INA213 INA214 SBOS437E – MAY 2008 – REVISED JUNE 2013 www.ti.com USING THE INA210 WITH COMMON-MODE TRANSIENTS ABOVE 26V With a small amount of additional circuitry, the INA210-INA214 series can be used in circuits subject to transients higher than 26V, such as automotive applications. Use only zener diode or zener-type transient absorbers (sometimes referred to as Transzorbs)— any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors as shown in Figure 27 as a working impedance for the zener. It is desirable to keep these resistors as small as possible, most often around 10Ω. Larger values can be used with an effect on gain that is discussed in the section on input filtering. Because this circuit is limiting only short-term transients, many applications are satisfied with a 10Ω resistor along with conventional zener diodes of the lowest power rating that can be found. This combination uses the least amount of board space. These diodes can be found in packages as small as SOT-523 or SOD-523. RSHUNT Supply RPROTECT 10W Load RPROTECT 10W Reference Voltage REF INA21x GND 1MW R3 1MW R4 V+ Shutdown Control Output OUT IN- IN+ CBYPASS Figure 27. INA210-INA214 Transient Protection Using Dual Zener Diodes 14 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA210, INA211 INA212, INA213 INA214 www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 In the event that low-power zeners do not have sufficient transient absorption capability and a higher power transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-toback diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total board area required by the INA210-INA214 with all protective components is less than that of an SO-8 package, and only slightly greater than that of an MSOP-8 package. RSHUNT Supply RPROTECT 10W Load RPROTECT 10W Reference Voltage REF INA21x GND 1MW R3 1MW R4 V+ Shutdown Control Output OUT IN- IN+ CBYPASS Figure 28. INA210-INA214 Transient Protection Using a Single Transzorb and Input Clamps Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA210 INA211 INA212 INA213 INA214 15 INA210, INA211 INA212, INA213 INA214 SBOS437E – MAY 2008 – REVISED JUNE 2013 www.ti.com IMPROVING TRANSIENT ROBUSTNESS Applications involving large input transients with excessive dV/dt above 2kV per microsecond present at the device input pins may cause damage to the internal ESD structures on version A devices. This potential damage is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With significant current available in most current-sensing applications, the large current flowing through the input transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be taken to ensure that external series input resistance does not significantly impact gain error accuracy. For accuracy purposes, these resistances should be kept under 10Ω if possible. Ferrite beads are recommended for this filter because of their inherently low dc ohmic value. Ferrite beads with less than 10Ω of resistance at dc and over 600Ω of resistance at 100MHz to 200MHz are recommended. The recommended capacitor values for this filter are between 0.01µF and 0.1µF to ensure adequate attenuation in the high-frequency region. This protection scheme is shown in Figure 29. Shunt Reference Voltage Load Supply Device OUT REF 1MW R3 GND IN- - + MMZ1608B601C IN+ V+ +2.7V to +26V 0.01mF to 0.1mF Output 1MW R4 0.01mF to 0.1mF Figure 29. Transient Protection To minimize the cost of adding these external components to protect the device in applications where large transient signals may be present, version B devices are now available with new ESD structures that are not susceptible to this latching condition. Version B devices are incapable of sustaining these damage causing latched conditions so they do not have the same sensitivity to the transients that the version A devices have, thus making the version B devices a better fit for these applications. 16 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA210, INA211 INA212, INA213 INA214 www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (November 2012) to Revision E • Page Deleted Package Marking column from Package/Ordering Information table ...................................................................... 2 Changes from Revision C (August 2012) to Revision D • Page Changed Frequency Response, Bandwidth parameter in Electrical Characteristics table .................................................. 3 Changes from Revision B (June 2009) to Revision C Page • Changed Package/Ordering table to show both silicon versions A and B ........................................................................... 2 • Added silicon version B ESD ratings to Abs Max table ........................................................................................................ 2 • Added silicon version B row to Input, Common-Mode Input Range parameter in Electrical Characteristics table .............. 3 • Corrected typo in Figure 9 .................................................................................................................................................... 6 • Updated Figure 12 ................................................................................................................................................................ 6 • Changed Input Filtering section .......................................................................................................................................... 10 • Added Improving Transient Robustness section ................................................................................................................ 16 Changes from Revision A (June 2008) to Revision B Page • Added RSW package to device photo .................................................................................................................................. 1 • Added QFN package to Features list ................................................................................................................................... 1 • Updated front page graphic .................................................................................................................................................. 1 • Added RSW ordering information to Package/Ordering Information table ........................................................................... 2 • Added footnote 3 to Electrical Characteristics table ............................................................................................................. 3 • Added QFN package information to Temperature Range section of Electrical Characteristics table .................................. 3 • Added RSW package pin out drawing .................................................................................................................................. 4 • Changed Figure 2 to reflect operating temperature range ................................................................................................... 5 • Changed Figure 4 to reflect operating temperature range ................................................................................................... 5 • Changed Figure 6 to reflect operating temperature range ................................................................................................... 5 • Changed Figure 13 to reflect operating temperature range ................................................................................................. 7 • Changed Figure 14 to reflect operating temperature range ................................................................................................. 7 • Added RSW description to the Basic Connections section .................................................................................................. 9 • Changed 60μV to 100μV in last sentence of the Selecting RS section ............................................................................... 9 Changes from Original (May 2008) to Revision A Page • Changed availability of INA211 and INA212 to currently available in Package/Ordering Information table ........................ 2 • Deleted first footnote of Electrical Characteristics table ....................................................................................................... 3 • Changed Figure 7 ................................................................................................................................................................. 5 • Changed Figure 15 ............................................................................................................................................................... 7 Copyright © 2008–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: INA210 INA211 INA212 INA213 INA214 17 PACKAGE OPTION ADDENDUM www.ti.com 11-Sep-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) INA210AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CET INA210AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CET INA210AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CET INA210AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CET INA210AIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KNJ INA210AIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 (KNJ ~ NSJ) INA210BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SED INA210BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SED INA210BIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHQ INA210BIRSWT ACTIVE UQFN RSW 10 250 TBD Call TI Call TI -40 to 125 SHQ INA211AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEU INA211AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEU INA211AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEU INA211AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEU INA211BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEE INA211BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEE INA212AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEV Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 11-Sep-2013 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) INA212AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEV INA212AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEV INA212AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CEV INA212BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEC INA212BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEC INA213AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFT INA213AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFT INA213AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFT INA213AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFT INA213AIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KPJ INA213AIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KPJ INA213BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEF INA213BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEF INA213BIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHT INA213BIRSWT ACTIVE UQFN RSW 10 250 TBD Call TI Call TI -40 to 125 SHT INA214AIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFV INA214AIDCKRG4 ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFV INA214AIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFV Addendum-Page 2 Samples PACKAGE OPTION ADDENDUM www.ti.com Orderable Device 11-Sep-2013 Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) INA214AIDCKTG4 ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 CFV INA214AIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KRJ INA214AIRSWT ACTIVE UQFN RSW 10 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 KRJ INA214BIDCKR ACTIVE SC70 DCK 6 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEA INA214BIDCKT ACTIVE SC70 DCK 6 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 SEA INA214BIRSWR ACTIVE UQFN RSW 10 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 SHU INA214BIRSWT ACTIVE UQFN RSW 10 250 TBD Call TI Call TI -40 to 125 SHU (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Addendum-Page 3 Samples PACKAGE OPTION ADDENDUM www.ti.com 11-Sep-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. OTHER QUALIFIED VERSIONS OF INA212, INA214 : • Automotive: INA212-Q1, INA214-Q1 NOTE: Qualified Version Definitions: • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 4 PACKAGE MATERIALS INFORMATION www.ti.com 9-Oct-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant INA210AIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA210AIDCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA210AIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA210AIDCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA210AIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA210AIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA210BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA210BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA210BIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA211AIDCKR SC70 DCK 6 3000 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3 INA211AIDCKT SC70 DCK 6 250 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3 INA211AIDCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA211BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA211BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA212AIDCKR SC70 DCK 6 3000 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3 INA212AIDCKT SC70 DCK 6 250 180.0 8.4 2.25 2.4 1.22 4.0 8.0 Q3 INA212BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA212BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 9-Oct-2013 Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant INA213AIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA213AIDCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA213AIDCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA213AIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA213AIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA213AIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA213BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA213BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA213BIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA214AIDCKR SC70 DCK 6 3000 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA214AIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA214AIDCKT SC70 DCK 6 250 179.0 8.4 2.2 2.5 1.2 4.0 8.0 Q3 INA214AIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA214AIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA214AIRSWT UQFN RSW 10 250 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 INA214BIDCKR SC70 DCK 6 3000 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA214BIDCKT SC70 DCK 6 250 178.0 9.0 2.4 2.5 1.2 4.0 8.0 Q3 INA214BIRSWR UQFN RSW 10 3000 179.0 8.4 1.7 2.1 0.7 4.0 8.0 Q1 *All dimensions are nominal Pack Materials-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 9-Oct-2013 Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA210AIDCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA210AIDCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA210AIDCKT SC70 DCK 6 250 180.0 180.0 18.0 INA210AIDCKT SC70 DCK 6 250 195.0 200.0 45.0 INA210AIRSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA210AIRSWT UQFN RSW 10 250 203.0 203.0 35.0 INA210BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA210BIDCKT SC70 DCK 6 250 180.0 180.0 18.0 INA210BIRSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA211AIDCKR SC70 DCK 6 3000 202.0 201.0 28.0 INA211AIDCKT SC70 DCK 6 250 223.0 270.0 35.0 INA211AIDCKT SC70 DCK 6 250 195.0 200.0 45.0 INA211BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA211BIDCKT SC70 DCK 6 250 180.0 180.0 18.0 INA212AIDCKR SC70 DCK 6 3000 202.0 201.0 28.0 INA212AIDCKT SC70 DCK 6 250 223.0 270.0 35.0 INA212BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA212BIDCKT SC70 DCK 6 250 180.0 180.0 18.0 INA213AIDCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA213AIDCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA213AIDCKT SC70 DCK 6 250 195.0 200.0 45.0 INA213AIDCKT SC70 DCK 6 250 180.0 180.0 18.0 INA213AIRSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA213AIRSWT UQFN RSW 10 250 203.0 203.0 35.0 INA213BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA213BIDCKT SC70 DCK 6 250 180.0 180.0 18.0 INA213BIRSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA214AIDCKR SC70 DCK 6 3000 195.0 200.0 45.0 INA214AIDCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA214AIDCKT SC70 DCK 6 250 195.0 200.0 45.0 INA214AIDCKT SC70 DCK 6 250 180.0 180.0 18.0 INA214AIRSWR UQFN RSW 10 3000 203.0 203.0 35.0 INA214AIRSWT UQFN RSW 10 250 203.0 203.0 35.0 INA214BIDCKR SC70 DCK 6 3000 180.0 180.0 18.0 INA214BIDCKT SC70 DCK 6 250 180.0 180.0 18.0 INA214BIRSWR UQFN RSW 10 3000 203.0 203.0 35.0 Pack Materials-Page 3 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, 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