TI TS3A27518EZQSR

TS3A27518E
www.ti.com........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
6-BIT, 1-of-2 MULTIPLEXER/DEMULTIPLEXER WITH INTEGRATED IEC L-4 ESD
AND 1.8-V LOGIC COMPATIBLE CONTROL INPUTS
FEATURES
1
•
•
•
•
•
•
•
RTW PACKAGE
(TOP VIEW)
N.C.
NC1
NC2
IN1
NC3
NC6
1.65-V to 3.6-V Single-Supply Operation
Isolation in Powerdown Mode, V+ = 0
Low Capacitance Switches, 21.5 pF (Typical)
Bandwidth up to 240 MHz for High-Speed
Rail-to-Rail Signal Handling
Crosstalk and Off Isolation of -62dB
1.8-V Logic Threshold Compatibility for
Control Inputs
3.6-V Tolerant Control Inputs
Latch-Up Performance Exceeds 100-mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
– 2500-V Human-Body Model
(A114-B, Class II)
– 1500-V Charged-Device Model (C101)
ESD Performance: NC/NO Ports
– ±6-kV Contact Discharge (IEC 61000-4-2)
24-QFN (4 × 4 mm), 24-BGA (3 × 3 mm) and
24-TSSOP (7.9 × 6.6 mm) Packages
24 23 22 21 20 19
COM1
GND
COM2
COM3
V+
COM4
18
2
17
3
16
4
15
5
14
6
13
7
8
NC4
EN
NC5
NO5
NO4
NO6
9 10 11 12
PW PACKAGE
(TOP VIEW)
NC2
NC1
N.C.
COM1
GND
COM2
COM3
V+
APPLICATIONS
•
•
•
1
COM5
NO1
COM6
NO2
IN2
NO3
•
•
•
•
SD/SDIO and MMC Two Port MUX
PC VGA Video MUX/Video Systems
Audio and Video Signal Routing
COM4
COM5
NO1
COM6
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8
17
9
16
10
15
11
14
12
13
IN1
NC3
NC6
NC4
EN
NC5
NO5
NO4
NO6
NO3
IN2
NO2
N.C. – Not internally connected
ZQS PACKAGE
(TOP VIEW)
ZQS PIN ASSIGNMENTS
1
2
3
4
5
A
COM1
NC2
N.C.
NC3
NC6
A
B
COM2
NC1
IN1
NC4
B
C
COM3
V+
GND
EN
NC5
C
D
COM4
COM6
IN2
NO5
NO4
D
E
COM5
NO1
NO2
NO3
NO6
1 2 3 4 5
E
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
TS3A27518E
SCDS260B – MARCH 2009 – REVISED MAY 2009........................................................................................................................................................... www.ti.com
DESCRIPTION/ORDERING INFORMATION
The TS3A27518E is a 6-bit 1-of-2 Mux/Demux designed to operate from 1.65 V to 3.6 V. This device can handle
both digital and analog signals, and signals up to V+ can be transmitted in either direction. The TS3A27518E has
two control pins, each controlling three 1-of-2 muxes at the same time, and an enable pin that is used to put all
outputs in high-impedance mode. The control pins are compatible with 1.8V logic thresholds and are backward
compatible with 2.5 V and 3.3 V logic thresholds as well.
The TS3A27518E allows any SD, SDIO, and multimedia card host controllers to be expanded out to multiple
cards or peripherals since the SDIO interface consists of 6-bits: CMD, CLK, and Data[0:3] signals. The
TS3A27518E has two control pins that give additional flexibility to the user. For example, the ability to mux two
different audio-video signals in equipment such as an LCD television,an LCD monitor, or a notebook docking
station.
ORDERING INFORMATION
TA
PACKAGE
–40°C to 85°C
(1)
(2)
(1) (2)
ORDERABLE PART NUMBER
TOP-SIDE MARKING
BGA – ZQS
Tape and reel
TS3A27518EZQSR
YL518E
QFN – RTW
Tape and reel
TS3A27518ERTWR
YL518E
TSSOP – PW
Tape and reel
TS3A27518EPWR
YL518E
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
LOGIC DIAGRAM
SUMMARY OF CHARACTERISTICS
V+ = 3.3 V, TA = 25°C
VCC
IN1
1-of-2
Multiplexer/Demultiplexer
Configuration
Logic
EN
IN2
Number of channels
NC1
6
ON-state resistance (ron)
6.2 Ω (max)
ON-state resistance match (Δron)
0.7 Ω (max)
ON-state resistance flatness
(rON(flat))
2.1 Ω (max)
NO1
NC4
Turn-on/turn-off time (tON/tOFF)
59 ns/ 60.6 ns (max)
COM1
NO4
Break-before-make time (tBBM)
22.7 ns (max)
COM4
Charge injection (QC)
0.81 pC
Bandwidth (BW)
240 MHz
NC2
NO2
NC5
COM2
NO5
OFF isolation (OISO)
–62 dB at 10 MHz
COM5
Crosstalk (XTALK)
–62 dB at 10 MHz
Total harmonic distortion (THD)
NC3
NO3
NC6
COM3
NO6
Power-supply current (I+)
24-pin QFN (RTW),
24-BGA (ZQS)
24-TSSOP (PW)
Package options
COM6
0.05%
< 0.3 µA (max)
GND
FUNCTION TABLE
2
EN
IN1
IN2
NC1/2/3 TO COM1/2/3,
COM1/2/3 TO NC1/2/3
NC4/5/6 TO COM4/5/6,
COM4/5/6 TO NC4/5/6
NO1/2/3 TO COM1/2/3,
COM1/2/3 TO NO1/2/3
NO4/5/6 TO COM4/5/6,
COM4/5/6 TO NO4/5/6
H
X
X
OFF
OFF
OFF
OFF
L
L
L
ON
ON
OFF
OFF
L
H
L
OFF
ON
ON
OFF
L
L
H
ON
OFF
OFF
ON
L
H
H
OFF
OFF
ON
ON
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Product Folder Link(s): TS3A27518E
TS3A27518E
www.ti.com........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
SDIO EXPANDER APPLICATION BLOCK DIAGRAM
VCC
VCC
VCC
NC1
COM1
NO1
NC2
COM2
NO2
NC3
COM3
NO3
SD/MMC
Memory Card
NC4
SDIO Port
COM4
NO4
NC5
COM5
NO5
NC6
COM6
NO6
Digital
Baseband or
Apps Processor
IN1, IN2, EN
VCC
TS3A27518
SDIO Peripheral
(Bluetooth,
WLAN, DTV, etc)
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Product Folder Link(s): TS3A27518E
3
TS3A27518E
SCDS260B – MARCH 2009 – REVISED MAY 2009........................................................................................................................................................... www.ti.com
ABSOLUTE MINIMUM AND MAXIMUM RATINGS (1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
V+
Supply voltage range (3)
–0.5
4.6
V
VNC
VNO
VCOM
Analog voltage range (3) (4) (5)
–0.5
4.6
V
IK
Analog port diode current (6)
V+ < VNC, VNO, VCOM < 0
–50
INC
INO
ICOM
ON-state switch current (7)
VNC, VNO, VCOM = 0 to V+
–50
50
mA
VI
Digital input voltage range (3) (4)
–0.5
4.6
V
IIK
Digital input clamp current
(3) (4)
I+
Continuous current through V+
IGND
Continuous current through GND
Tstg
Storage temperature range
(1)
(2)
(3)
(4)
(5)
(6)
(7)
VIO < VI < 0
UNIT
mA
–50
mA
100
mA
–100
mA
–65
150
°C
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
This value is limited to 5.5 V maximum.
Requires clamp diodes on analog port to V+.
Pulse at 1-ms duration <10% duty cycle
THERMAL IMPEDANCE RATINGS
UNIT
PW package
θJA
(1)
Package thermal impedance (1)
87.9
RTW package
66
ZQS package
171.6
°C/W
The package thermal impedance is calculated in accordance with JESD 51-7.
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (1)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
ON-state
resistance
VCOM,
VNO, VNC
ron
ON-state
resistance match
between channels
ON-state
resistance
flatness
Δron
ron(flat)
INC(OFF),
INO(OFF)
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
(1)
4
0
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 15
VNC or VNO = 2.1 V,
ICOM = –32 mA,
Switch ON,
See Figure 15
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 16
VNC or VNO = 1 V,
VCOM = 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V,
25°C
Full
0.3
0.95
3V
Full
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
or
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
3.6 V
25°C
Full
–7
–1
0V
0.05
Ω
Ω
2.1
2.3
–0.5
Ω
0.7
0.8
25°C
Full
6.2
7.6
3V
25°C
Switch OFF,
See Figure 16
4.4
3V
25°C
Full
V+
Ω
0.5
7
0.05
–12
1
µA
12
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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Product Folder Link(s): TS3A27518E
TS3A27518E
www.ti.com........................................................................................................................................................... SCDS260B – MARCH 2009 – REVISED MAY 2009
ELECTRICAL CHARACTERISTICS FOR 3.3-V SUPPLY (continued)
V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
ICOM(OFF)
COM
OFF leakage
current
ICOM(PWROFF)
NC, NO
ON leakage
current
COM
ON leakage
current
TEST CONDITIONS
VNC or VNO = 3 V,
VCOM = 1 V,
or
VNC or VNO = 1 V,
VCOM = 3 V,
TA
V+
25°C
Full
VNC or VNO = 3.6 V to 0,
VCOM = 0 to 3.6 V,
or
VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,
Switch OFF,
See Figure 16
25°C
Full
INO(ON),
INC(ON)
VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 3 V,
VCOM = Open,
Switch ON,
See Figure 17
ICOM(ON)
VNC or VNO = Open,
VCOM = 1 V,
or
VNC or VNO = Open,
VCOM = 3 V,
Switch ON,
See Figure 17
3.6 V
0V
MAX
0.01
1
–2
3.6 V
3.6 V
0.02
1
µA
1
0.04
–7
–2
UNIT
2
–12
–2.5
25°C
Full
TYP
–1
–1
25°C
Full
MIN
2.2
7
0.03
–7
µA
2
7
µA
Digital Control Inputs (IN1, IN2, EN) (2)
Input logic high
VIH
Full
3.6 V
1.2
3.6
V
Input logic low
VIL
Full
3.6 V
0
0.65
V
Input leakage current
25°C
0.05
0.1
µA
IIH, IIL
VI = V+ or 0
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
25°C
3.3 V
Full
3 V to 3.6 V
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
25°C
3.3 V
Full
3 V to 3.6 V
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 20
25°C
3.3 V
Full
3 V to 3.6 V
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
See Figure 24
25°C
3.3 V
0.81
pC
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
3.3 V
13
pF
COM
OFF capacitance
CCOM(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
3.3 V
8.5
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
3.3 V
21.5
pF
COM
ON capacitance
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
3.3 V
21.5
pF
VI = V+ or GND
See Figure 18
25°C
3.3 V
2
pF
Full
3.6 V
–0.1
–2.5
2.5
Dynamic
Digital input
capacitance
CI
18.1
59
60
25.4
60.6
61
4
11.1
22.7
28
ns
ns
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
3.3 V
240
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
3.3 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
3.3 V
–62
dB
XTALK(ADJ)
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
3.3 V
–71
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
3.3 V
0.05
%
VI = V+ or GND,
Switch ON or OFF
Crosstalk adjacent
Total harmonic
distortion
Supply
Positive
supply current
(2)
I+
25°C
Full
3.6 V
0.04
0.3
3
µA
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS3A27518E
SCDS260B – MARCH 2009 – REVISED MAY 2009........................................................................................................................................................... www.ti.com
ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (1)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
ON-state
resistance
VCOM,
VNO, VNC
ron
ON-state
resistance match
between channels
ON-state
resistance
flatness
Δron
ron(flat)
INC(OFF),
INO(OFF)
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
ICOM(OFF)
COM
OFF leakage
current
ICOM(PWROFF)
NC, NO
ON leakage
current
COM
ON leakage
current
0
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 15
VNC or VNO = 1.6 V,
ICOM = –32 mA,
Switch ON,
See Figure 15
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 16
VNC or VNO = 0.5 V,
VCOM = 2.3 V,
or
VNC or VNO = 2.3 V,
VCOM = 0.5 V,
VNC or VNO = 0 to 2.7 V,
VCOM =2.7 V to 0,
or
VNC or VNO = 2.7 V to 0,
VCOM = 0 to 2.7 V,
VNC or VNO = 0.5 V,
VCOM = 2.3 V,
or
VNC or VNO = 2.3 V,
VCOM = 0.5 V,
VNC or VNO = 2.7 V to 0,
VCOM = 0 to 2.7 V,
or
VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,
25°C
Full
0.3
0.91
2.3 V
Full
2.7 V
25°C
Full
25°C
Full
Switch OFF,
See Figure 16
INO(ON),
INC(ON)
VNC or VNO = 0.5 V or 2.3
V,
VCOM = Open,
Switch ON,
See Figure 17
ICOM(ON)
VNC or VNO = Open,
VCOM = 0.5 V,
or
VNC or VNO = Open,
VCOM = 2.3 V,
Switch ON,
See Figure 17
2.7 V
0V
25°C
Full
25°C
Full
2.7 V
0.02
0.3
0.6
µA
0.7
1
0.02
0.7
µA
7.2
0.03
–6
–2
Ω
10
–7.2
–2.1
2.7 V
0.02
–1
–0.7
Ω
6
–10
–0.7
25°C
Full
–6
–0.6
0V
0.04
Ω
2.2
2.3
–0.3
Ω
0.8
0.9
25°C
Full
9.6
11.5
2.3 V
25°C
Switch OFF,
See Figure 16
5.5
2.3 V
25°C
Full
V+
2.1
6
0.02
–5.7
µA
2
5.7
µA
Digital Control Inputs (IN1, IN2, EN) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage current
VI = V+ or GND
Full
2.7 V
1.15
3.6
V
Full
2.7 V
0
0.55
V
25°C
0.01
0.1
µA
IIH, IIL
VI = V+ or 0
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
25°C
2.5 V
Full
2.3 V to 2.7 V
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
25°C
2.5 V
Full
2.3 V to 2.7 V
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 20
25°C
2.5 V
Full
2.3 V to 2.7 V
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 0.1 nF,
See Figure 24
25°C
2.5 V
0.47
pC
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
2.5 V
13.5
pF
COM
OFF capacitance
CCOM(OFF)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
2.5 V
9
pF
Full
2.7 V
-0.1
–2.1
2.1
Dynamic
(1)
(2)
6
17.2
36.8
42.5
17.1
29.8
34.4
4.5
13
30
33.3
ns
ns
ns
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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TS3A27518E
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ELECTRICAL CHARACTERISTICS FOR 2.5-V SUPPLY (continued)
V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
See Figure 18
25°C
2.5 V
22
pF
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
2.5 V
22
pF
VI = V+ or GND
See Figure 18
25°C
2.5 V
2
pF
NC, NO
ON capacitance
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch OFF,
COM
ON capacitance
CCOM(ON)
Digital input
capacitance
CI
MIN
TYP
MAX
UNIT
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
2.5 V
240
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
2.5 V
–62
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
2.5 V
–62
dB
XTALK(ADJ)
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
2.5 V
–71
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
2.5 V
0.06
%
VI = V+ or GND,
Switch ON or OFF
Crosstalk adjacent
Total harmonic
distortion
Supply
Positive
supply current
I+
25°C
Full
0.01
2.7 V
0.1
2
µA
ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (1)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
TA
V+
MIN
TYP
MAX
UNIT
Analog Switch
Analog signal
range
ON-state
resistance
ON-state
resistance match
between channels
ON-state
resistance
flatness
VCOM,
VNO, VNC
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 15
VNC or VNO = 1.5 V,
ICOM = –32 mA,
Switch ON,
See Figure 15
ron(flat)
0 ≤ (VNC or VNO) ≤ V+,
ICOM = –32 mA,
Switch ON,
See Figure 16
INC(OFF),
INO(OFF)
VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V
ron
Δron
NC, NO
OFF leakage
current
INC(PWROFF),
INO(PWROFF)
ICOM(OFF),
ICOM(OFF)
COM
OFF leakage
current
ICOM(PWROFF),
ICOM(PWROFF)
NC, NO
ON leakage
current
(1)
0
INO(ON),
INC(ON)
VNC or VNO = 1.95 V to 0,
VCOM = 0 to 1.95 V,
or
VNC or VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V
VNC or VNO = 1.95 V to 0,
VCOM = 0 to 1.95 V,
or
VNC or VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,
VNC or VNO = 0.3 V,
VCOM = Open,
or
VNC or VNO = 1.65 V,
VCOM = Open,
25°C
Full
Full
0.3
1.65 V
2.7
1.65 V
1.95 V
25°C
Full
25°C
Full
25°C
Full
0V
Full
0.9
0.02
µA
µA
0.4
5
0.02
–5.2
µA
0.4
–5
–2
1.95 V
0.02
Ω
0.4
7.2
–0.9
–0.4
25°C
Switch ON,
See Figure 17
–7.2
–0.4
1.95 V
5
0.01
Ω
0.25
–5
–0.4
0V
0.03
Ω
5.5
7.3
–0.25
Ω
1
1.2
25°C
Full
14.4
16.3
25°C
Full
Switch OFF,
See Figure 16
7.1
1.65 V
25°C
Switch OFF,
See Figure 16
V+
µA
2
5.2
µA
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
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ELECTRICAL CHARACTERISTICS FOR 1.8-V SUPPLY (continued)
V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
COM
ON leakage
current
SYMBOL
ICOM(ON)
TEST CONDITIONS
VNC or VNO = Open,
VCOM = 0.3 V,
or
VNC or VNO = Open,
VCOM = 1.65 V,
TA
V+
25°C
Switch ON,
See Figure 17
Full
1.95 V
MIN
TYP
MAX
–2
0.02
2
–5.2
5.2
UNIT
µA
Digital Control Inputs (IN1, IN2, EN) (2)
Input logic high
VIH
Input logic low
VIL
Input leakage current
VI = V+ or GND
Full
1.95 V
1
3.6
V
Full
1.95 V
0
0.4
V
25°C
IIH, IIL
VI = V+ or 0
Turn-on time
tON
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Turn-off time
tOFF
VCOM = V+,
RL = 50 Ω,
CL = 35 pF,
See Figure 19
Break-beforemake time
tBBM
VNC = VNO = V+/2,
RL = 50 Ω,
CL = 35 pF,
See Figure 20
Charge injection
QC
VGEN = 0,
RGEN = 0,
NC, NO
OFF capacitance
CNC(OFF),
CNO(OFF)
NC, NO
ON capacitance
COM
ON capacitance
Full
1.95 V
-0.1
0.01
-2.1
0.1
2.1
µA
Dynamic
Digital input
capacitance
25°C
1.8 V
Full
1.65 V to 1.95
V
25°C
1.8 V
Full
1.65 V to 1.95
V
14.1
49.3
56.7
16.1
26.5
31.2
18.4
ns
25°C
1.8 V
Full
1.65 V to 1.95
V
CL = 1 nF,
See Figure 24
25°C
1.8 V
0.21
pC
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
1.8 V
9
pF
CNC(ON),
CNO(ON)
VNC or VNO = V+ or GND,
Switch OFF,
See Figure 18
25°C
1.8 V
22
pF
CCOM(ON)
VCOM = V+ or GND,
Switch ON,
See Figure 18
25°C
1.8 V
22
pF
VI = V+ or GND
See Figure 18
25°C
1.8 V
2
pF
CI
5.3
ns
58
58
ns
Bandwidth
BW
RL = 50 Ω,
Switch ON,
See Figure 20
25°C
1.8 V
240
MHz
OFF isolation
OISO
RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 22
25°C
1.8 V
-60
dB
Crosstalk
XTALK
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
1.8 V
-60
dB
XTALK(ADJ)
RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 23
25°C
1.8 V
-71
dB
THD
RL = 600 Ω,
CL = 50 pF,
f = 20 Hz to 20 kHz,
See Figure 25
25°C
1.8 V
0.1
%
VI = V+ or GND,
Switch ON or OFF
Crosstalk adjacent
Total harmonic
distortion
Supply
Positive
supply current
(2)
8
I+
25°C
Full
1.95 V
0.01
0.1
1.5
µA
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
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PARAMETER DESCRIPTION
SYMBOL
VCOM
DESCRIPTION
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Δron
ron(flat)
Resistance between COM and NC or NO ports when the channel is ON
Difference of ron between channels in a specific device
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INC(OFF)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state
INC(ON)
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
(COM) open
INO(OFF)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state
INO(ON)
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
(COM) open
ICOM(OFF)
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the OFF state
ICOM(ON)
Leakage current measured at the COM port, with the corresponding channel (COM to NC or NO) in the ON state and the
output (NC or NO) open
VIH
Minimum input voltage for logic high for the control input (IN, EN)
VIL
Maximum input voltage for logic low for the control input (IN, EN)
VI
Voltage at the control input (IN, EN)
IIH, IIL
Leakage current measured at the control input (IN, EN)
tON
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output NC or NO) signal when the switch is turning ON.
tOFF
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
delay between the digital control (IN) signal and analog output (NC or NO) signal when the switch is turning OFF.
QC
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC or NO)
output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.
Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(OFF)
Capacitance at the NC port when the corresponding channel (NO to COM) is OFF
CNO(ON)
Capacitance at the NC port when the corresponding channel (NO to COM) is ON
CCOM(OFF)
Capacitance at the COM port when the corresponding channel (COM to NC) is OFF
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC) is ON
CI
Capacitance of control input (IN, EN)
OISO
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
frequency, with the corresponding channel (NC to COM) in the OFF state.
XTALK
Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC1 to NO1). Adjacent
crosstalk is a measure of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2) .This is
measured in a specific frequency and in dB.
BW
Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD
Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root
mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental
harmonic.
I+
Static power-supply current with the control (IN) pin at V+ or GND
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TYPICAL CHARACTERISTICS
8
7
7
ON-State Resistance, rON (W)
ON-State Resistance, rON (W)
6
5
4
3
2
6
5
4
3
85ºC
2
85ºC
1
25ºC
25ºC
1
-–40ºC
–40ºC
0
0
0.0
0.5
1.0
1.5
2.0
COM Voltage, VCOM (V)
2.5
3.0
0.0
3.5
Figure 1. ON-State Resistance vs COM Voltage (V+ = 3 V)
0.5
1.0
1.5
COM Voltage, VCOM (V)
2.0
2.5
Figure 2. ON-State Resistance vs COM Voltage (V+ = 2.3 V)
12
600
550
500
Leakage Current, II (nA)
ON-State Resistance, rON (W)
10
8
6
4
85ºC
COM (OFF)
450
COM (ON)
400
NO (OFF)
NO (ON)
350
300
250
200
150
25ºC
2
100
-–40ºC
50
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
COM Voltage, VCOM (V)
1.4
1.6
1.8
Figure 3. ON-State Resistance vs COM Voltage (V+ = 1.65
V)
10
0
–40
25
Temperature, TA (°C)
85
Figure 4. Leakage Current vs Temperature (V+ = 3.3 V)
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TYPICAL CHARACTERISTICS (continued)
45
4.0
40
3.5
35
Output Voltage, VOUT (V)
Supply Current, I+ (nA)
3.0
30
25
20
15
10
2.5
2.0
1.5
1.0
5
INx = High
0
INx = Low
–5
0.0
0.5
1.0
1.5
2.0
2.5
Supply Voltage, V+ (V)
3.0
3.5
0.5
0.0
0.0
4.0
Figure 5. Supply Current vs Supply Voltage
0.4
0.6
0.8
1.0
1.2
Input Voltage, VIN (V)
1.4
1.6
2.0
1.8
Figure 6. Control Input Thresholds (IN1, TA = 25°C)
–10
–10
–20
–20
–30
–30
–40
Magnitude (dB)
–40
Magnitude (dB)
0.2
–50
–60
–50
–60
–70
1.8 V
2.5 V
–70
–80
NO1TOCOM1-NO2
–80
3.3 V
NO1TOCOM1-NO3
–90
NO1TOCOM1-NO4
NO1TOCOM1-NO5
–90
–100
NO1TOCOM1-NO6
0.1
–100
0.1
1
10
Frequency (MHz)
100
1
10
Frequency (MHz)
100
1000
1000
Figure 7. Crosstalk Adjacent
Figure 8. Crosstalk
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TYPICAL CHARACTERISTICS (continued)
0.11
–10
–20
–30
0.09
Magnitude (dB)
Total Harmonic Distortion, THD (%)
0.10
1.8 V
2.5 V
0.08
3.3 V
–40
–50
–60
–70
0.07
1.8 V
–80
0.05
0.1
2.5 V
3.3 V
0.06
–90
–100
1
10
Frequency (Hz)
100
0.1
1000
1
Figure 9. Total Harmonic Distortion vs Frequency
10
Frequency (MHz)
100
1000
Figure 10. OFF Isolation
0
1
–2
0
–4
–1
Charge Injection, QC (pC)
Magnitude (dB)
–6
–8
–10
–12
1.8 V
–14
–3
–4
–5
2.5 V
–16
–2
3.3 V
–6
–18
–20
0.1
–7
1
10
Frequency (MHz)
100
Figure 11. Insertion Loss
12
1000
0
0.3
0.6
0.9
1.2
Bias Voltage (V)
1.5
1.8
Figure 12. Charge Injection vs Bias Voltage (1.8 V)
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TYPICAL CHARACTERISTICS (continued)
2
4
2
0
Charge Injection, QC (pC)
Charge Injection, QC (pC)
0
–2
–4
–6
–2
–4
–6
–8
–10
–12
–8
–14
–10
–16
0
0.3
0.6
0.9
1.5
1.8
1.2
Bias Voltage (V)
2.1
2.4
2.5
Figure 13. Charge Injection vs Bias Voltage (2.5 V)
0
0.3
0.6
0.9
1.2
1.5 1.8 2.1 2.4
Bias Voltage (V)
2.4
2.7
3.0
3.3
Figure 14. Charge Injection vs Bias Voltage (3.3 V)
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PARAMETER MEASUREMENT INFORMATION
+
Ω
IN
+
Figure 15. ON-state Resistance (rON)
+
+
OFF-State Leakage Current
Channel OFF
VI = VIH or VIL
IN
+
Figure 16. OFF-State Leakage Current
(ICOM(OFF), INC(OFF), ICOM(PWROFF), INC(PWROFF))
14
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PARAMETER MEASUREMENT INFORMATION (continued)
ON-State Leakage Current
Channel ON
VI = VIH or VIL
+
IN
+
Figure 17. ON-State Leakage Current
(ICOM(ON), INC(ON))
VNO
NO
Capacitance
Meter
VBIAS = V+ or GND and
VI = VIH or VIL
COM COM
VBIAS
Capacitance is measured at NO,
COM, and IN inputs during ON
and OFF conditions.
Figure 18. Capacitance
(CI, CCOM(OFF), CCOM(ON), CNC(OFF), CNC(ON))
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PARAMETER MEASUREMENT INFORMATION (continued)
TEST
RL
CL
VCOM
tON
50 Ω
35 pF
V+
tOFF
50 Ω
35 pF
V+
IN
Logic
Intput
(VI)
tOFF
tON
90%
Switch
Output
(VNO)
90%
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B.
CL includes probe and jig capacitance.
Figure 19. Turn-On (tON) and Turn-Off Time (tOFF)
VNC or VNO
NC or NO
NC or NO
VOH
VNC or VNO = V+/2
RL = 50 Ω
CL = 35 pF
A.
CL includes probe and jig capacitance.
B.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
Figure 20. Break-Before-Make Time (tBBM)
16
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PARAMETER MEASUREMENT INFORMATION (continued)
Channel ON: NO to COM
VI = VIH or VIL
50 Ω
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
IN
Ω
+
Figure 21. Bandwidth (BW)
Channel OFF: NO to COM
VI = VIH or VIL
50 Ω
Ω
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
IN
Ω
+
Figure 22. OFF Isolation (OISO)
50 Ω
VNC
NC
VNO
NO
Channel ON: NC to COM
Channel OFF: NO to COM
VI = VIH or VIL
Ω
IN
Ω
+
Network Analyzer Setup
Source Power = 0 dBM
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
Figure 23. Crosstalk (XTALK)
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PARAMETER MEASUREMENT INFORMATION (continued)
Δ
IN
xΔ
A.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,
tf < 5 ns.
B.
CL includes probe and jig capacitance.
Figure 24. Charge Injection (QC)
Channel ON: COM to NO
VSOURCE = V+ P-P
VI = VIH or VIL
fSOURCE = 20 Hz to 20 kHz
RL = 600 Ω
CL = 50 pF
V+/2
Audio Analyzer
NO
600 Ω
COM
IN
+
600 Ω
–V+/2
A.
CL includes probe and jig capacitance.
Figure 25. Total Harmonic Distortion (THD)
18
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PACKAGE OPTION ADDENDUM
www.ti.com
4-Jun-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
TS3A27518EPWR
ACTIVE
TSSOP
PW
24
2000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
TS3A27518ERTWR
ACTIVE
QFN
RTW
24
3000 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
TS3A27518EZQSR
ACTIVE
ZQS
24
2500 Green (RoHS &
no Sb/Br)
SNAGCU
Level-1-260C-UNLIM
BGA MI
CROSTA
R JUNI
OR
Pins Package Eco Plan (2)
Qty
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Jun-2009
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TS3A27518EPWR
TS3A27518ERTWR
TS3A27518EZQSR
Package Package Pins
Type Drawing
SPQ
Reel
Reel
Diameter Width
(mm) W1 (mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TSSOP
PW
24
2000
330.0
16.4
6.95
8.3
1.6
8.0
16.0
Q1
QFN
RTW
24
3000
330.0
12.4
4.3
4.3
1.5
8.0
12.0
Q2
ZQS
24
2500
330.0
12.4
3.3
3.3
1.6
8.0
12.0
Q1
BGA MI
CROSTA
R JUNI
OR
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
2-Jun-2009
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS3A27518EPWR
TSSOP
PW
24
2000
346.0
346.0
33.0
TS3A27518ERTWR
QFN
RTW
24
3000
346.0
346.0
29.0
TS3A27518EZQSR
BGA MICROSTAR
JUNIOR
ZQS
24
2500
340.5
338.1
20.6
Pack Materials-Page 2
MECHANICAL DATA
MTSS001C – JANUARY 1995 – REVISED FEBRUARY 1999
PW (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
14 PINS SHOWN
0,30
0,19
0,65
14
0,10 M
8
0,15 NOM
4,50
4,30
6,60
6,20
Gage Plane
0,25
1
7
0°– 8°
A
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
8
14
16
20
24
28
A MAX
3,10
5,10
5,10
6,60
7,90
9,80
A MIN
2,90
4,90
4,90
6,40
7,70
9,60
DIM
4040064/F 01/97
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0,15.
Falls within JEDEC MO-153
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