RoHS RoHS 12FD(R)Series SEMICONDUCTOR Nell High Power Products Fast Recovery Diodes (Stud Version), 12A Available RoHS* FEATURES COMPLIANT Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities Standard JEDEC types Stud cathode and stud anode versions Fully characterized reverse recovery conditions RoHS compliant TYPICAL APPLICATIONS DC power supplies lnverters Converters Choppers Ultrasonic systems Freewheeling diodes DO-203AA(DO-4) PRODUCT SUMMARY IF(AV) 12A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS I F(AV) T C = 100°C I F(RMS) 50 HZ I FSM I 2√t Range V RRM t rr TJ 12 A 19 A 170 180 145 134 60 HZ 50 HZ 60 HZ I 2t UNIT 12FD.. A A 2s 1452 I 2√s 200 to 1200 V See Recovery Characteristics table ns -65 to 150 ºC Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM,MAXIMUM REPETITIVE PEAK AND AND OFF-STATE VOLTAGE V VRSM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 02 200 04 400 500 06 600 725 08 800 950 10 1000 1200 12 1200 1400 IRRM,MAXIMUM AT TJ = 150°C µA mA 10 6.0 275 12FD(R) Note (1) JEDEC registered values www.nellsemi.com IRRM,MAXIMUM AT TJ = 25°C Page 1 of 6 12FD(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle non-reptitive surge current 12FD(R) TEST CONDITIONS SYMBOL TC 12 (1) 100 19 t = 10ms No voltage reapplied 170 145 t = 8.3ms 100%V RRM reapplied t = 10ms t = 8.3ms No voltage reapplied t = 10ms 100%V RRM reapplied 180° conduction, half sine wave DC I F(AV) I F(RMS) t = 8.3ms I FSM t = 10ms Maximum l²t for fusing I 2t t = 8.3ms Maximum l²√t for fusing I 2√t Maximum on-state voltage V FM UNIT A ºC A 180 A Sinusoidal half wave, 150 (1) initial T J = 150°C 145 134 105 A 2s 93 t = 0.1 to 10 ms, no voltage reapplied 1452 T J = 25°C; l F = 12 A 1.4 (1) T C = 100°C; l FM = 38 A 1.5 (1) A 2√s V Note (1) JEDEC registered values RECOVERY CHARACTERISTICS PARAMETER Maximum reverse recovery time 12FD(R) SYMBOL t rr TEST CONDITIONS 02 to 06 08 to 12 I F =1A, I R = 0.5A, I RR = 0.25A (RG#1 CKT) 200 500 T J = 25°C,dl F /dt = 25 A/µs, l FM = π x rated l F(AV) 200 UNIT IFM trr t dir dt ns Q rr IRM(REC) 500 THERMAL AND MECHANICAL SPECIFCATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range SYMBOL TEST CONDITIONS 12FD(R) TJ - 65 to150 T stg - 65 to175 Maximum thermal resistance, junction to case R thJC DC operation 2.0 Maximum thermal resistance case to heatsink R thCS Mounting surface, smooth, flat and greased 0.5 UNITS ºC K/W Not-lubricated threads Allowable mounting torque +0 Lubricated threads Approximate weight Case style www.nellsemi.com 1.5 +0 -10% (13) JEDEC Page 2 of 6 1.2 -10% (10) 7 0.25 N·m (lbf · in) N·m (lbf · in) g oz. DO-203AA (DO-4) 12FD(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products RthJC CONDUCTION 12FD(R) CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180˚ 0.46 0.26 120˚ 60˚ 0.48 0.46 1.02 1.76 1.02 1.76 30˚ Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC ORDERING INFORMATION SCHEME 12 FD R Current 12 = 12A Diode type FD = Fast Recovery Diode Polarity R = Reverse None = standard Voltage 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V Trr value A = 200 ns Max. B = 500 ns Max. www.nellsemi.com Page 3 of 6 06 A TEST CONDUCTIONS UNITS T J = 150°C K/W 12FD(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Maximum allowable case temperature (˚C) Fig.1 Average forward current vs. maximum allowable case temperature. Fig.2 Reverse recovery time test waveform lF 160 12FD(R)Series 150 d lF dt l FM 140 t rr 130 t DC 120 1/4 l RM(REC) 110 Q RR l RM(REC) lF 100 90 180° 80 120° 60° 180° l F ,l FM = Peak forward current prior to commutation d lF /d t = Rate of fall of forward current l RM(REC) = Peak reverse recovery current 70 60 0 2 6 4 8 10 12 16 14 18 20 t rr = Reverse recovery time Q RR = Reverse recovered charge Average forward current (A) 68 -▲ 8 10 - ▲R 12 ▲R 1 5 -▲ R 6 2 0 -▲ 10 RMS Limit ▲R 3. 4. ▲R 0▲R 0▲R K/ W R 0 1 3 4 2 5 6 7 180° 0.46 120° 0.48 60° 1.02 30° 1.76 R no hea tsin k Conduction Angle 2 K/W = 5- 3 0 -▲R 4 0 SA ▲R 30° th ▲R 12 R ▲R 14 60° 0- 120° 1. 16 0- 12FD(R)Series T J = 150°C ø = 180° Conduction angle ø 20 18 2. Maximum average forward power loss (W) Fig. 3 Current rating nomogram (sinusoidal waveforms) 8 9 10 11 12 10 20 30 40 50 60 70 80 90 100 Average forward current (A) Maximum allowable ambient temperature (°C) 120° 4- ▲ 60° 40 30° 30 RMS limit 2. 0▲R K/ W R R 6 -▲ R 8 -▲R 1 0 -▲R 1 5 -▲R 20 -▲R ø 20 DC K/W ▲R = 5- ▲ 0 180° 0.26 120° 0.46 60° 1.02 30° 1.76 Conduction Angle no hea tsin k 0 0 2 4 6 8 10 12 14 16 18 20 10 20 30 40 50 60 70 80 90 100 Average forward current (A) www.nellsemi.com R SA ▲R 50 3 -▲ DC ▲R 0- th ø =180° 1. R 5- 12FD(R)Series T J = 150°C 60 Conduction angle ø 70 0. Maximum average forward power loss (W) Fig.4 Current rating nomogram (Rectangular Waveforms) . Maximum allowable ambient temperature (°C) Page 4 of 6 12FD(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig. 5 Maximum forward voltage vs. forward current. Maximum average forward power loss (W) Instantaneous Forward Current (A) 10 3 12FD(R)Series 10 2 10 T J = 150°C T J = 25°C 1 0 0.5 1.0 1.5 2.0 Fig .6 Maximum high level forward power loss vs. average forward current 2.5 3.0 10 3 12FD(R)Series ø =180° 120° 60° 30° ø =DC 180° 120° 60° 30° 10 2 10 T J = 150°C 1 3.5 4.0 Fig .7 Typical reverse recovery time vs. rate of fall of forward current. Fig .8 Typical recovered charge vs. rate of fall of forward current. 10 4 150° 600 500 400 300 C l F = π x rated l F(AV) l F = π x rated l F(AV) TJ = 200 Recovered charge (nC) Reverse recovery time (ns) 10 3 Average forward current (A) Instantaneous forward voltage (V) TJ = 10 2 10 1 25°C 100 12FD(R)Series 60 50 40 30 1 F =1A 10 3 10 2 TJ =1 50 °C 12FD(R)Series 10 TJ 20 = ° 25 C 1 F =1A 12FD(R), 200 to 600V 12FD(R), 200 to 600V 1 10 3 1 10 30 3 1 100 Rate of fall of forward current (A/µs) 10 30 100 Rate of fall of forward current (A/µs) Fig .9 Typical reverse recovery time vs. rate of fall of forward current. Fig .10 Typical recovered charge vs. rate of fall of forward current. 10 5 Recovered charge (nC) Reverse recovery time (ns) l F = π x rated l F(AV) l F = π x rated l F(AV) 3000 2000 TJ = 150° C 1000 600 500 400 300 TJ = 25°C 12FD(R)Series 200 10 4 10 3 TJ =1 50 °C 12FD(R)Series 10 2 TJ 5 =2 °C 1 F =1A 1 F =1A 12FD(R), 800 to 1200V 12FD(R), 800 to 1200V 10 100 3 1 10 30 1 100 Rate of fall of forward current (A/µs) www.nellsemi.com 3 10 30 Rate of fall of forward current (A/µs) Page 5 of 6 100 12FD(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig .11 Maximum transient thermal impedance, junction-to-case vs. pulse duration. Fig .12 Maximum non-repetitive surge current vs. number of current pulses . 10 Peak half sine wave forward current (Amperes) Transient thermal impedance (junction tp case) ° C/W 12FD(R)Series 1 10 -1 10 -3 10 -2 10 -1 1 At any rated load condition and with rated V RRM applied following surge. 150 100 60Hz 50Hz 50 0 0 2 4 6 8 10 40 60 Number of equal amplitude half cycle current pulses (N) Square wave pulse duration (s) DO-203AA (DO-4) 10.6/11.2 (0.41/0.44) 11.6/12.4 (0.45/0.48) Ø8.5/Ø8.9 (Ø0.33/Ø0.35) 3.7/4.3 (0.14/0.16) 10.5/11.5 (0.41/0.45) 9.6/10.1 (0.37/0.39) 20.0/21.0 (0.78/0.82) 5.0/5.6 (0.19/0.22) Ø1.5/Ø1.7 Ø0.05/Ø0.06 10/32” UNF-2A For metric devices: M5×0.8 www.nellsemi.com 20 10 Page 6 of 6 0.5/1.0 (0.02/0.04)