RoHS 40FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products Fast Recovery Diodes (Stud Version), 40A Available RoHS* COMPLIANT FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities Stud cathode and stud anode versions Voltage up to 1200 V RRM Compliant to RoHS TYPICAL APPLICATIONS DC power supplies lnverters Converters Choppers Ultrasonic systems Freewheeling diodes DO-203AB(DO-5) PRODUCT SUMMARY IF(AV) 40A MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS Maximum T C 50 HZ I FSM A 85 ºC t rr A A 2s I 2√s 200 to 1200 V See Recovery Characteristics table ns -40 to 125 ºC Range TJ 40 11281 I 2√t V RRM UNIT 475 500 1128 1038 60 HZ 50 HZ 60 HZ I 2t 40FD(R) Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 40FD(R) VRRM, MAXIMUM PEAK REPETITIVE REVERSE VOLTAGE TJ = -40°C TO 125°C V VRSM, MAXIMUM PEAK NON-REPETITIVE REVERSE VOLTAGE TJ = 25°C TO 125°C V 02 200 300 04 400 500 06 600 700 08 800 900 10 1000 1100 12 1200 1300 VOLTAGE CODE www.nellsemi.com Page 1 of 6 IFM, MAXIMUM PEAK REVERSE CURRENT AT RATED VRRM mA TJ = 25°C TJ = 125°C 0.1 10 RoHS 40FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products FORWARD CONDUCTION 40FD(R) UNIT 40 A 85 63 ºC Sinusoidal half wave, 30° conduction 220 A t = 10ms Sinusoidal half wave, 100% V RRM reapplied, initial T J =T J maximum 400 475 t = 8.3ms Sinusoidal half wave, no voltage reapplied, initial T J =T J maximum t = 10ms t = 8.3ms 100% V RRM reapplied, initial T J =T J maximum t = 10ms no voltage reapplied, initial T J =T J maximum TEST CONDITIONS SYMBOL PARAMETER Maximum average forward current at maximum case temperature I F(AV) 180° conduction, half sine wave I F(RMS) Maximum RMS forward current I FRM Maximum peak repetitive forward current Maximum peak, one-cycle I FSM non-reptitive surge current t = 8.3ms t = 10ms Maximum l²t for fusing I 2t t = 8.3ms Maximum l²√t for fusing (1) I 2√t Maximum value of threshold voltage V F(TO) Maximum value of forward slope resistance Maximum forward voltage drop rF V FM 420 A A 500 800 732 1128 A 2s 1038 t = 0.1 ms to 10 ms, no voltage reapplied T J = 125°C T J = 25°C; l FM = 125A 11281 A 2√s 1.081 V 6.33 mΩ 1.95 V Note : (1) l 2 t for time t x =1 2√t √t x SWITCHING PARAMETER Typical reverse recovery time Typical reverse recovered charge www.nellsemi.com SYMBOL t rr Q rr TEST CONDITIONS 40FD(R) 02 to 06 08 to 12 T J = 25°C, I F = 1A, I R = 1.0A, I RR = 250mA (RG#1 CKT) 200 500 T J = 25°C, I F = 1A to V R = 30V , -dl F /dt = 100 A/µs 70 180 T J = 25°C, -dl F /dt = 25 A/µs, l FM = π x rated l F(AV) 200 500 T J = 25°C, I F = 1A to V R = 30V, -dl F /dt = 100 A/µs 160 750 T J = 25°C, -dl F /dt = 25 A/µs, l FM = π x rated l F(AV) 240 Page 2 of 6 UNIT ns nC 1300 RoHS 40FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products THERMAL AND MECHANICAL SPECIFCATIONS SYMBOL PARAMETER Maximum junction operating temperature range 40FD(R) TEST CONDITIONS TJ UNITS -40 to125 ºC Maximum storage temperature range T stg Maximum thermal resistance, junction to case R thJC Maximum thermal resistance, case to heatsink R thCS - 40 to150 0.60 DC operation K/W Mounting surface, smooth, flat and greased Maximum allowable mounting torque (+0%, -10%) Not lubricated threads, tighting on nut (1) 3.4(30) Lubricated thread, tighting on nut (1) 2.3(20) Not lubricated threads, tighting on hexagon (2) 4.2(37) Lubricated thread, tighting on hexagon (2) 3.2(28) g 25 oz. 0.88 DO-203AB (DO-5) Approximate weight Case style 0.25 JEDEC N·m (lbf · in) Note : (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks RthJC CONDUCTION 40FD(R) CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180˚ 0.14 0.03 120˚ 60˚ 0.15 0.14 0.30 0.50 0.31 0.52 30˚ Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC ORDERING INFORMATION SCHEME 40 FD R Current 40 = 40A Diode type FD = Fast Recovery Diode Polarity R = Reverse, Anode on Stud None = standard, Cathode on Stud Voltage 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V Trr value A = 200 ns Max. B = 500 ns Max. www.nellsemi.com Page 3 of 6 06 A TEST CONDUCTIONS UNITS T J = 150°C K/W RoHS 40FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Reverse recovery time test waveform lF d lF dt l FM t rr t 1/4 l RM(REC) Q RR l RM(REC) lF l F ,l FM = Peak forward current prior to commutation d lF /d t = Rate of fall of forward current l RM(REC) = Peak reverse recovery current t rr = Reverse recovery time Q RR = Reverse recovered charge ▲R 3- -▲R K/ W 30 0. 3- ▲ = 2 .0 RMS Limit ▲R A 40 ▲R 0- 1 .5 30° 7- 1. 60° hS 0. 90° 50 Rt ▲R 5- 120° -▲ R 10 Conduction Angle 0 0 5 10 15 20 25 30 35 Average forward current (A) 180° 0.14 120° 0.15 90° 0.20 60° 0.31 30° 0.52 R 4 -▲ R 5 -▲ R 20 K/W ø = 180° ▲R 40 FD( R) Se ries T J = 125°C 60 Conduction angle ø 70 0. Maximum average forward power loss (W) Fig.2 Current rating nomogram (Sinusoidal Waveforms) 40 10 20 30 40 50 60 70 80 90 100 Maximum allowable ambient temperature (°C) 80 70 R 0. 5▲R 0. 7▲R 1. 0▲R 1 .5 -▲ R 2. 0 - ▲R ø = DC 180° 120° 60 60° 50 40 RMS Limit 30 3 -▲ 4 -▲ SA = 0. 3▲R K/ W R DC 0 180° 0.08 120° 0.14 60° 030 R 20 ø 10 Conduction Angle 0 0 10 20 30 40 50 Average forward current (A) www.nellsemi.com th ▲R 40FD(R)Series T J = 125°C 90 K/W 100 Conduction angle ø Maximum average forward power loss (W) Fig. 3 Current rating nomogram (Rectangular waveforms) 60 70 10 20 30 40 50 60 70 80 90 100 Maximum allowable ambient temperature (°C) Page 4 of 6 RoHS 40FD(R)Series RoHS SEMICONDUCTOR Nell High Power Products Fig. 5 Maximum forward voltage vs. forward current. 10 4 10 3 40FD(R)Series 40FD(R)Series T J = 125°C ø =180° 120° 60° 30° Instantaneous forward current (A) Maximum average forward power loss (W) Fig .4 Maximum high level forward power loss vs. average forward current ø =DC 180° 120° 60° 30° 10 3 10 2 10 10 10 2 10 3 10 2 T J = 125°C 10 T J = 25°C 1 10 4 0 Average forward current (A) 1.5 2.0 2.5 3.0 Fig .7 Typical reverse recovery time vs. rate of fall of forward current. 125 1000 T J = 125°C Reverse recovery time (ns) 40FD(R)Series 110 ø =180° 120° 60° 30° 100 90 80 ø =180° 120° 90° 60° 30° 70 60 3.5 4.0 Instantaneous forward voltage (V) Fig.6 Average forward current vs. maximum allowable case temperature. Maximum allowable case temperature (˚C) 0.5 1.0 l F = 125A 600 500 400 300 l F = 20A l F = 1A 200 T J = 25°C 100 l F = 125A l F = 20A 60 50 40 30 l F = 1A 20 DC 50 40FD(R), 200 to 600V 40 0 10 10 20 30 40 50 60 3 1 70 Average forward current (A) 10 30 100 Rate of fall of forward current (A/µs) Fig .9 Typical reverse recovery time vs. rate of fall of forward current. Fig .8 Typical recovered charge vs. rate of fall of forward current. 10 4 10 3 Reverse recovery time (ns) Recovered charge (nC) 40FD(R), 200 to 600V l F = 125A l F = 20A l F = 1A 10 2 TJ 10 TJ = =2 5 12 5° °C C 6000 5000 4000 3000 40FD(R), 800 to 1200V T J = 125°C 2000 l F = 125A l F = 20A l F = 1A 1000 600 500 400 300 T J = 25°C 200 l F = 20A l F = 125A l F = 1A 1 3 1 10 30 100 100 1 Rate of fall of forward current (A/µs) www.nellsemi.com 3 10 30 Rate of fall of forward current (A/µs) Page 5 of 6 100 40FD(R)Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig .10 Typical recovered charge vs. rate of fall of forward current. Recovered charge (nC) 10 5 l F = 125A 10 4 l F = 20A l F = 1A 10 3 TJ =1 25 °C 10 2 TJ =2 5° C 40FD(R), 800 to 1200V 10 3 1 10 30 100 Rate of fall of forward current (A/µs) DO-203AB (DO-5) 17.3(0.68) 19(0.75) Ø15(Ø0.6) 0.9/1.5 (0.03/0.06) 11(0.43) 9.4/10.2 (0.37/0.4) 25.4(1.0) 6.1/6.7 (0.24/0.26) (3.0(0.11)MIN Ø4.3(Ø01.7) 1/4” 28UNF-2A For metric devices: M6×1.0 40FD.. AII dimensions in millimeters (inches) www.nellsemi.com Page 6 of 6 40FD(R)..