RoHS 25PTS Series RoHS SEMICONDUCTOR Nell High Power Products Medium Power Thyristors (Stud Version), 25A Available RoHS* COMPLIANT FEATURES Improved glass passivation for high reliability and exceptional stability at high temperature High dI/dt and dV/dt capabilities Standard package Low thermal resistance Metric threads version available Types up to 1600 V V DRM / V RRM RoHS compliant Designed and qualified for industrial and consumer level TYPICAL APPLICATIONS Medium power switching Phase control applications Can be supplied to meet stringent military, aerospace and other high reliability requirements TO-208AA(TO-48) PRODUCT SUMMARY IT(AV) 25A MAJOR RATINGS AND CHARACTERISTICS TEST CONDITIONS PARAMETER I T(AV) TC I T(RMS) 50 HZ I TSM V DRM /V RRM tq UNITS 25 A 85 ºC 40 A 420 440 882 804 60 HZ 50 HZ 60 HZ I 2t VALUES Typical TJ A A 2s 600 to 1600 V 110 µS -65 to 125 ºC ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 25PT VOLTAGE CODE VDRM/VRRM,MAXIMUM AND OFF-STATE VOLTAGE V (1) VRSM,MAXIMUM IDRM/IRRM,MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) AT TJ = TJ MAXIMUM V mA 06 600 700 08 800 900 10 1000 1100 12 1200 1300 16 1600 1700 Note (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with tp ≤ 5 ms www.nellsemi.com Page 1 of 6 10 RoHS 25PTS Series RoHS SEMICONDUCTOR Nell High Power Products FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL I T(AV) TEST CONDITIONS 180° conduction, half sine wave I T(RMS) non-reptitive surge current Maximum l²t for fusing I TSM No voltage reapplied 350 t = 8.3ms 100%V RRM reapplied t = 10ms t = 8.3ms No voltage reapplied t = 10ms 100%V RRM reapplied t = 8.3ms t = 10ms I 2t t = 8.3ms Maximum l²√t for fusing I 2√t 25 85 40 420 t = 10ms Maximum peak, one-cycle VALUES 440 Sinusoidal half wave, 370 initial T J = T J maximum 882 804 625 UNITS A ºC A A A 2s 569 t = 0.1 to 10 ms, no voltage reapplied, T J = T J maximum 8820 Low level value of threshold voltage VT(TO)1 (16.7 % x πx l T(AV) < l < πx l T(AV) ), T J = T J maximum 0.99 High level value of threshold voltage VT(TO)2 (l > πx l T(AV) ), T J = T J maximum 1.40 A 2√s V Low level value of on-state slope resistance r t1 (16.7 % x πx l T(AV) < l < πx l T(AV) ), T J = T J maximum 10.1 High level value of on-state slope resistance r t2 (l > πx l T(AV) ), 5.7 Maximum on-state voltage V TM Maximum holding current lH Latching current lL mΩ T J = T J maximum l pk = 79 A, T J = 25°C T J = 25 °C, anode supply 6 V, resistive load 1.70 130 200 V mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS Maximum rate of rise of turned-on current dl/dt Typical turn-on time t gt Typical reverse recovery time t rr T J = T J maximum, I TM = I T(AV) , t p > 200 µs, dI/dt = - 10 A/µs tq T J = T J maximum, I TM = I T(AV) , t p > 200 µs, V R = 100 V, dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V DRM , gate bias 0 V to 100 V Typical turn-off time T J = T J maximum, V DM = 2/3 V DRM , t P = 200 µs I G = 0.3A, dI G /dt = 0.3 A/us, T J = 125 °C T J = 25 °C, at rated V DRM /V RRM , T J = 125 °C VALUES UNITS 150 A/µs 0.9 4 µs 110 Note t q = 10 µs up to 600 V, t q = 30 µs up to 1600 V available on special request BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage www.nellsemi.com SYMBOL dV/dt TEST CONDITIONS T J = T J maximum linear to 67 % rated V DRM , gate open Page 2 of 6 VALUES UNITS 1000 V/µs RoHS 25PTS Series RoHS SEMICONDUCTOR Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power P GM P G(AV) Maximum average gate power TEST CONDITIONS 8.0 T J = T J maximum Maximum peak positive gate current I GM T J = T J maximum Maximum peak negative gate voltage -V GM T J = T J maximum I GT Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied T J = 25°C T J = 125°C DC gate voltage required to trigger DC gate voltage not to trigger W 1.5 A 10 V 90 60 mA 35 T J = -65°C 3.0 T J = 25°C 1.5 T J =125°C 1.0 I GD T J = T J maximum, V DRM = Rated value 2.0 mA V GD Maximum gate current/voltage not to trigger is the maximum T J = T J maximum, value which will not trigger any V DRM = Rated value unit with rated V DRM anode to cathode applied 0.2 V V GT DC gate current not to trigger UNITS 2.0 T J = -65°C DC gate current required to trigger VALUES V THERMAL AND MECHANICAL SPECIFCATIONS SYMBOL PARAMETER Maximum junction operating and storage temperature range VALUES TEST CONDITIONS - 65 to125 T J , T stg Maximum thermal resistace, junction to case R thJC DC operation UNITS ºC 0.75 K/W Maximum thermal resistance case to heatsink R thCS 0.35 Mounting surface, smooth, flat and greased 3.4 +0 -10% (30) Not-lubricated threads Allowable mounting torque +0 23 -10% (20) 11.5 0.41 Lubricated threads Approximate weight Case style See dimensions - link at the end of datasheet N·m (lbf · in) N·m (lbf · in) g oz. TO-208AA (TO-48) ΔRthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.17 0.13 120° 90° 0.21 0.27 0.40 0.22 0.30 0.42 0.69 0.70 60° 30° Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC www.nellsemi.com Page 3 of 6 TEST CONDUCTIONS T J = T J maximum UNITS K/W RoHS 25PTS Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics 130 25PTS Series R thJC (DC)=0.75K/W 120 110 Conduction Angle 30° 100 60° 90° 120° 90 180° 80 5 0 10 15 20 25 25PTS Series R thJC (DC)=0.75K/W Maximum allowable case temperature(˚C) Maximum allowable case temperature(˚C) 130 120 110 Conduction Period 30° 100 60° 90° 120° 90 180° DC 80 30 0 10 Average forward current (A) 20 30 40 Average forward current (A) Fig.3 On-state power loss characteristics 45 120° R th /W el 3K -D 30° /W ta 30 /W 1K 2K 60° = 90° 35 SA R Maximum average on-state power loss (W) 180° 40 25 RMS Limit 4K /W 5K 20 7K Conduction Angle 15 10 /W /W 25PTS Series T J = 125°C 5 0 5 0 10 15 20 25 30 Average on-state current (A) 25 50 75 100 125 Maximum allowable ambient temperature (°C) 60 DC 55 180° hS 50 Rt 120° A = 1K 90° 45 /W 60° R /W 35 3K 30 25 RMS Limit /W 4K /W 20 5 K/ Conduction Period W 15 7 K /W 25PTS Series T J = 125°C 10 5 0 0 5 10 15 20 25 30 35 Average on-start current (A) www.nellsemi.com ta 2K 30° el 40 -D Maximum average forward on-state power loss (W) Fig.4 On-state power loss characteristics Page 4 of 6 40 25 50 75 100 Maximum allowable ambient temperature (°C) 125 RoHS 25PTS Series RoHS SEMICONDUCTOR Nell High Power Products 375 Fig.6 Maximum non-repetitive surge cCurrent Peak half sine wave on-state current (A) Peak half sine wave on-state current (A) Fig.5 Maximum non-repetitive surge current At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 350 Initial T J = 125°C @60 Hz 0.0083 s 325 @50 Hz 0.0100 s 300 275 250 225 25PTS Series 200 175 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial TJ = 125°C No Voltage Reapplied 375 350 Reted VRRM Reapplied 325 300 275 250 225 200 25PTS Series 175 150 0.01 100 10 1 450 425 400 Fig.7 Forward voltage drop characterisics 1 Fig.8 Thermal Impedance Z thJC characteristics 1000 1 Transient thermal Impedance Z thJC (K/W) Instantaneous on-state current (A) 0.1 Pulse train duration (S) Number of equal amplitude half cycle current pulses(N) 25PTS Series 100 10 T J = 25°C T J = 175°C 1 0 0.5 1.5 1 2 2.5 3 3.5 4 Steady State Value RthJC = 1.5K/W (DC Operation) 0.1 25PTS Series 0.01 0.001 0.01 0.1 10 1 Square wave pulse duration (s) Instantaneous on-state voltage (V) Fig.9 Gate characteristics 10 (1) PGM = 16W, tp = 4ms Rectangular gate pulse (a) Recommended load line for rated di/dt: 10V, 20ohms tr<=0.5µs, tq>= 6µs (b) Recommended load line for <=30%rated di/dt: 10V, 60ohms tr<=1µs, tq>= 6µs (2) PGM = 30W, tp = 2ms (3) PGM = 60W, tp = 1ms (4) PGM = 60W, tp = 1ms (a) (b) VGD T J = 65°C T J = 125°C 1 T J = 25°C lnstantaneous gate voltage(V) 100 (1) IGD 0.1 0.001 (4) 25PTS Series frequency limited by PG(AV) 0.01 0.1 lnstantaneous gate current (A) www.nellsemi.com (2) (3) Page 5 of 6 10 100 RoHS 25PTS Series RoHS SEMICONDUCTOR Nell High Power Products ORDERING INFORMATION TABLE Device code 25 PT 12 S M 1 2 3 4 5 1 - Current Code 2 - PT for SCR series 3 - Voltage code × 100 = VRRM (see Voltage Ratings table) 4 - S for stud type 5 - None = Stud base TO-208AA (TO-48) 1/4”-28 UNF-2A M = Stud base TO-208AA (TO-48) M6×1 GLASS - METAL SEAL AII dimensions in millimeters (inches) www.nellsemi.com Page 6 of 6