RoHS 20T Series RoHS SEMICONDUCTOR TRIACs, 20A Sunbberless FEATURES Medium current triac Low thermal resistance with clip bonding A2 Low thermal resistance insulation ceramic for insulated TO-220AB & TO-3P package 1 A1 A2 G Clip assembly 20T series are UL certified (File ref: E320098) TO-220AB (non-Insulated) (20TxxA) Packages are RoHS compliant 2 3 TO-220AB (lnsulated) (20TxxAI) APPLICATIONS A2 The snubberless concept offer suppression of RC network and it is suitable for applications such as phase control and static switching on inductive or resistive load. Due to their clip assembly techinque, they provide a superior performance in surge current handling capabilities. 1 A1 A2 G By using an internal ceramic pad, the 20T series provides voltage insulated tab (rated at 2500V RMS ) complying with UL standards. TO-3P (non-Insulated) (20TxxB) MAIN FEATURES 2 G TO-3P (Insulated) (20TxxBI) A2 SYMBOL VALUE UNIT I T(RMS) 20 A V DRM /V RRM 600 to 1000 V I GT(Q1) 35 to 50 mA A1 A2 G TO-263 (D2PAK) (20TxxH) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS TO-263/TO-220AB/TO-3P RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) IT(RMS) ITSM VALUE UNIT 20 A Tc = 90ºC TO-220AB insulated/TO-3P insulated Tc = 70ºC F =50 Hz t = 20 ms 200 F =60 Hz t = 16.7 ms 210 I t 2 t p = 10 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs Peak gate power dissipation (tp = 20µs) PGM T j =125ºC 10 PG(AV) T j =125ºC 1 I2t Value for fusing Average gate power dissipation Storage temperature range Operating junction temperature range www.nellsemi.com A 200 A2s T j =125ºC 50 A/µs T j =125ºC 4 A W Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 5 RoHS 20T Series RoHS SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS (3 quadrants) 20Txxxx SYMBOL IGT(1) QUADRANT TEST CONDITIONS CW BW 35 50 Unit I - II - III MAX. I - II - III MAX. 1.5 V I - II - III MIN. 0.2 V mA V D = 12 V, R L = 33Ω VGT V D = V DRM , R L = 3.3KΩ VGD T j = 125°C IH(2) I T = 500 mA IL I G = 1.2 I GT MAX. I - III MAX. II dV/dt(2) (dI/dt)c(2) 40 60 50 70 60 80 mA mA V D = 67% V DRM , gate open ,T j = 125°C MIN. 250 500 V/µs (dV/dt)c = 20 A/ms, T j = 125°C MIN. 11 18 A/ms STATIC CHARACTERISTICS SYMBOL VTM(2) TEST CONDITIONS VALUE UNIT MAX. 1.55 V T j = 125°C MAX. 1.04 V Dynamic resistance T j = 125°C MAX. 20 mΩ VD = VDRM VR = VRRM T j = 25°C 5 µA 2.5 mA VALUE UNIT I TM = 28 A, t P = 380 µs T j = 25°C Threshold voltage R d (2) IDRM IRRM Vt0 (2) MAX. T j = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCE SYMBOL Rth(j-c) Junction to case (AC) S = 1 cm 2 Rth(j-a) TO-220AB, TO-263, TO-3P TO-220AB Insulated, TO-3P Insulated 1.3 2.1 TO-263 45 TO-220AB Insulated, TO-220AB Junction to ambient °C/W 60 TO-3P, TO-3P Insulated S = Copper surface under tab. PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 35 mA Snubberless TO-220AB V V 50 mA Snubberless TO-220AB V V V 35 mA Snubberless TO-3P 20TxxB-BW/20TxxBl-BW V V V 50 mA Snubberless TO-3P 20TxxH -CW V V V 35 mA Snubberless D 2 PAK 20TxxH -BW V V V 50 mA Snubberless D 2 PAK 20TxxA-CW/ 20TxxAl-CW 20TxxA-BW/20TxxAl-BW 20TxxB-CW/20TxxBl-CW 600 V 800 V 1000 V V V V AI: Insulated TO-220AB package BI: Insulated TO-3P package www.nellsemi.com Page 2 of 5 RoHS 20T Series RoHS SEMICONDUCTOR ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 20TxxA-yy 20TxxA-yy TO-220AB 2.0g 50 Tube 20TxxAI-yy 20TxxAI-yy TO-220AB (insulated) 2.3g 50 Tube 20TxxB-yy 20TxxB-yy TO-3P 4.3g 30 Tube 20TxxBI-yy 20TxxBI-yy TO-3P (insulated) 4.8g 30 Tube 20TxxH-yy 20TxxH-yy TO-263(D 2 PAK) 2.0g 50 Tube Note: xx = voltage, yy = sensitivity ORDERING INFORMATION SCHEME A - BW 20 T 06 Current 20 = 20A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) B = TO-3P (non-insulated) BI = TO-3P ( insulated ) H = TO-263 (D 2 PAK) IGT Sensitivity BW = 50mA Snubberless CW = 35mA Snubberless Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 Correlation between maximun RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact P (W) P (W) 30 Tcase (°C) 30 65 R th =0 °C/W 25 R th =0.5 °C/W 20 85 20 α =120° 15 15 α =90° α =60° 10 I T(RMS) (A) 0 5 www.nellsemi.com 10 15 20 Page 3 of 5 0 105 R th =1 °C/W 115 5 α 95 R th =1.5 °C/W 10 180° α α =30° 5 0 75 25 α =180° T amb (°C) 125 0 20 40 60 80 100 120 RoHS 20T Series RoHS SEMICONDUCTOR Fig.3 RMS on-state current versus case temperature (full cycle) Fig.4 Relative variation of thermal impedance versus pulse duration. IT(RMS) (A) K=[Zth/Rth] 1 25 α =180° 20 Zth(j-c) TO-220AB TO-263 TO-3P 15 Zth(j-a) 10 TO-220AB (insulated) TO-3P ( insulated ) 0.1 5 Tc(°C) 0 0 10 20 30 40 50 60 70 80 0.01 1E-3 90 100 110 120 130 I (A) 5E+2 t=20ms Non repetitive Tj initial=25°C One cycle Tj=25°C VTM(V) 1 1E+2 ITSM (A) Tj=Tj max 10 1E+1 1000 T j max. V to = 1.04V R d = 20Ωm 100 1E+0 1E-1 Fig.6 Surge peak on-state current versus number of cycles. Fig.5 On-state characteristics (maximum values). 1000 tp(s) 1E-2 1 2 Number of cycles 100 3 10 1 5 4 Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. and corresponding value of l 2 t. 100 1000 Fig.8 Relative variation of gate trigger current and holding current versus junction temperature. l TSM (A), l 2 t(A 2 s) l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] 1000 2.5 Tj initial=25°C 2.0 I TSM IGT 1.5 1.0 I2t IH & IL 0.5 tp(ms) 100 0.01 0.10 www.nellsemi.com Tj(°C) 1.00 10.00 Page 4 of 5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 RoHS 20T Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) TO-3P www.nellsemi.com Page 5 of 5 2.79 (0.110)