RoHS 26T Series RoHS SEMICONDUCTOR TRIACs, 25A Sunbberless and Standard FEATURES High current triac Low thermal resistance with clip bonding A2 Low thermal resistance insulation ceramic for insulated TO-220AB & TO-3P package 1 A1 A2 G High commutation (4 quadrant) or very High commutation (3 quadrant) capability TO-220AB (non-Insulated) (26TxxA) 26T series are UL certified (File ref: E320098) Packages are RoHS compliant APPLICATIONS 2 3 TO-220AB (lnsulated) (26TxxAI) A2 Applications include the ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits, etc., or for phase control operation in light dimmers, motor speed controllers, and silmilar. A1 A2 G A1 A2 G The snubberless versions are especially recommended for use on inductive loads, due to their high commutation performances. The 26T series provides an insulated tab (rated at 2500V RMS ). TO-3P (non-Insulated) (26TxxB) MAIN FEATURES TO-3P (Insulated) (26TxxBI) A2 SYMBOL VALUE UNIT I T(RMS) 25 A V DRM /V RRM 600 to 1200 V I GT(Q1) 35 to 50 mA A1 A2 G TO-263 (D2PAK) (26TxxH) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) SYMBOL IT(RMS) ITSM TEST CONDITIONS Tc = 100ºC TO-220AB insulated Tc = 75ºC F =50 Hz t = 20 ms 250 F =60 Hz t = 16.7 ms 260 Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs PG(AV) T j =125ºC Operating junction temperature range www.nellsemi.com A TO-263/TO-220AB/TO-3P insulated t p = 10 ms Storage temperature range 25 Tc = 105ºC 2 Average gate power dissipation UNIT TO-3P I t I2t Value for fusing VALUE A 340 A2s T j =125ºC 50 A/µs T j =125ºC 4 A 1 W Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 6 RoHS 26T Series RoHS SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) 26Txxxx SYMBOL IGT(1) TEST CONDITIONS I - II - III V D = 12 V, R L = 30Ω V D = V DRM , R L = 3.3KΩ I - II - III T j = 125°C I T = 500 mA IL I G = 1.2 I GT 35 50 MIN. MAX. I - III (dI/dt)c(2) BW I - II - III IH(2) dV/dt(2) CW mA MAX. VGT VGD Unit QUADRANT II MAX. 1.3 V 0.2 V 50 75 70 80 80 100 mA 500 V D = 67% V DRM , gate open ,T j = 125°C mA 1000 V/µs 22 A/ms MIN. 13 Without snubber, T j = 125°C ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) Standard (4 quadrants) 26Txxxx TEST CONDITIONS SYMBOL IGT(1) QUADRANT I - II - III V D = 12 V, R L = 30Ω VGT VGD V D = V DRM , R L = 3.3KΩ, T j = 125°C IH(2) I T = 500 mA IL I G = 1.2 I GT B MAX. (dV/dt)c(2) 50 mA IV 100 ALL 1.3 V ALL 0.2 V 80 mA MAX. I - III - IV MAX. 70 mA 160 II dV/dt(2) UNIT V D = 67% V DRM , gate open, T j = 125°C MIN. 500 V/µs (dI/dt)c =13.3 A/ms, T j = 125°C MIN. 10 V/µs VALUE UNIT STATIC CHARACTERISTICS SYMBOL TEST CONDITIONS VTM(2) I TM = 35 A, t P = 380 µs T j = 25°C MAX. 1.55 V Vt0(2) Threshold voltage T j = 125°C MAX. 0.85 V Dynamic resistance T j = 125°C MAX. 16 mΩ VD = VDRM VR = VRRM T j = 25°C 5 µA 3 mA VALUE UNIT Rd (2) IDRM IRRM MAX. T j = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCE SYMBOL Rth(j-c) Junction to case (AC) S = 1 cm 2 Rth(j-a) Junction to ambient TO-3P TO-263/TO-220AB 0.6 0.8 TO-3P Insulated TO-220AB Insulated 0.9 1.7 TO-263 45 TO-220AB Insulated, TO-220AB 60 TO-3P, TO-3P Insulated 50 S = Copper surface under tab. www.nellsemi.com Page 2 of 6 °C/W RoHS 26T Series RoHS SEMICONDUCTOR PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 50 mA Standard TO-220AB V V 35 mA Snubberless TO-220AB V V V 50 mA Snubberless TO-220AB V V V V 50 mA Standard TO-3P 26TxxB -CW/26TxxBl-CW V V V V 35 mA Snubberless TO-3P 26TxxB -BW/26TxxBl-BW V V V V 50 mA Snubberless TO-3P 26TxxH-B V V V V 50 mA Standard D 2 PAK 26TxxH -CW V V V V 35 mA Snubberless D 2 PAK 26TxxH -BW V V V V 50 mA Snubberless D 2 PAK 600 V 800 V 1000 V 1200 V 26TxxA-B/ 26TxxAl-B V V V 26TxxA-CW/26TxxAl-CW V V 26TxxA-BW/26TxxAl-BW V 26TxxB-B/26TxxBl-B AI: Insulated TO-220AB package BI: Insulated TO-3P package ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 26TxxA-yy 26TxxA-yy TO-220AB 2.0g 50 Tube 26TxxAI-yy 26TxxAI-yy TO-220AB (insulated) 2.3g 50 Tube 26TxxB-yy 26TxxB-yy TO-3P 4.3g 30 Tube 26TxxBI-yy 26TxxBI-yy TO-3P (insulated) 4.8g 30 Tube 26TxxH-yy 26TxxH-yy D 2 PAK 2.0g 50 Tube Note: xx = voltage, yy = sensitivity ORDERING INFORMATION SCHEME 26 T 06 Current 26 = 25A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) B = TO-3P (non-insulated) BI = TO-3P ( insulated ) H = TO-263 (D 2 PAK) IGT Sensitivity BW = 50mA Snubberless CW = 35mA Snubberless B = 50mA Standard www.nellsemi.com Page 3 of 6 A - BW RoHS 26T Series RoHS SEMICONDUCTOR Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) P (W) IT(RMS) (A) 30 30 25 25 20 20 15 15 10 10 TO-3P TO-220AB ( insulated ) TO-220AB TO-263 TO-3P(insulated) 5 5 I T(RMS) (A) T C (°C) 0 0 5 0 10 15 20 0 25 Fig.3 D 2 PAK RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm)(full cycle) 4.0 25 75 50 100 125 Fig.4 Relative variation of thermal impedance versus pulse duration. IT(RMS) (A) K=[Zth/Rth] 1E+0 Zth(j-c) D 2 PAK (S=1cm 2 ) 3.5 Zth(j-a) TO-263AB TO-220AB TO-220AB (insulated) 3.0 1E-1 2.5 2.0 1.5 1E-2 Zth(j-a) 1.0 TO-3P(insulated) 0.5 Tamb(°C) 0.0 0 25 75 50 100 125 1E-3 (A) 100 Tj max. Vto = 0.85 V Rd = 16 mΩ 1E-1 1E+0 1E+1 250 5E+2 t=20ms One cycle Non repetitive 200 Tj=Tj max 1E+2 ITSM (A) 300 300 1E-2 Fig.6 Surge peak on-state current versus number of cycles. Fig.5 On-state characteristics (maximum values). I tp(s) 1E-3 Tj initial=25°C 150 Tj=25°C 10 Repetitive Tc=75°C 100 50 VTM(V) 1 0.5 1.0 1.5 www.nellsemi.com 2.0 2.5 Number of cycles 0 3.0 3.5 4.0 4.5 Page 4 of 6 1 10 100 1000 RoHS 26T Series RoHS SEMICONDUCTOR Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. and corresponding value of l 2 t. Fig.8 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). l TSM (A), l 2 t(A 2 s) l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] 3000 2.5 Tj initial=25°C 2.0 dI/dt limitation: 50A/µs IGT I TSM 1000 1.5 IH & IL I2t 1.0 0.5 Tj(°C) tp(ms) 100 0.01 0.0 0.10 1.00 10.00 Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). -40 0 20 40 60 80 100 120 140 Fig.10 Relative variation of critical rate of decrease of main current versus T j (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 6 2.4 2.2 2.0 5 1.8 1.6 4 CW/BW B 1.4 3 1.2 1.0 2 0.8 0.6 0.4 -20 1 (dV/dt)c (V/µs) 0.1 100.0 10.0 1.0 Fig.11 D 2 PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) R th(j-a) (°C/W) 80 TO-263 70 60 50 40 30 20 10 S(cm2) 0 0 4 8 12 www.nellsemi.com 16 20 24 28 32 36 40 Page 5 of 6 Tj(°C) 0 0 25 50 75 100 125 RoHS 26T Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) TO-3P www.nellsemi.com Page 6 of 6 2.79 (0.110)