BTA/BTB06 Series ® 6A TRIACS SNUBBERLESS™, LOGIC LEVEL & STANDARD MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 6 A VDRM/VRRM 600 and 800 V IG (Q1) 5 to 50 G A1 A2 mA DESCRIPTION Suitable for AC switching operations, the BTA/ BTB06 series can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control in light dimmers, motor speed controllers,... The snubberless and logic level versions (BTA/ BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) A1 A2 G A1 A2 G TO-220AB (BTB06) TO-220AB Insulated (BTA06) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t Parameter RMS on-state current (full sine wave) Value TO-220AB Tc = 110°C Unit A 6 Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing TO-220AB Ins. Tc = 105°C F = 50 Hz t = 20 ms 60 F = 60 Hz t = 16.7 ms 63 tp = 10 ms A 21 A² s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range April 2002 - Ed: 5A 1/6 BTA/BTB06 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol IGT (1) VGT Test Conditions Quadrant RL = 30 Ω VD = 12 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 100 mA IL IG = 1.2 IGT BTA/BTB06 SW CW BW 5 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 I - II - III MIN. 0.2 I - III (dI/dt)c (2) ■ mA V V MAX. 10 15 35 50 mA MAX. 10 25 50 70 mA 15 30 60 80 II dV/dt (2) Unit TW VD = 67 %VDRM gate open Tj = 125°C MIN. 20 40 400 1000 V/µs (dV/dt)c = 0.1 V/µs MIN. 2.7 3.5 - - A/ms Tj = 125°C (dV/dt)c = 10 V/µs Tj = 125°C 1.2 2.4 - - Without snubber Tj = 125°C - - 3.5 5.3 STANDARD (4 Quadrants) Symbol Test Conditions IG (1) VD = 12 V Quadrant RL = 30 Ω VGT VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 500 mA IL IG = 1.2 IGT BTA/BTB06 B 25 50 50 100 Unit I - II - III IV MAX. ALL MAX. 1.3 V ALL MIN. 0.2 V mA MAX. 25 50 mA MAX. 40 50 mA 80 100 VD = 67 %VDRM gate open Tj = 125°C MIN. 200 400 V/µs Tj = 125°C MIN. 5 10 V/µs I - III - IV II dV/dt (2) C (dV/dt)c (2) (dI/dt)c = 2.7 A/ms STATIC CHARACTERISTICS Symbol VT (2) Test Conditions ITM = 5.5 A tp = 380 µs Unit MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 60 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 2/6 Tj = 25°C Value Tj = 125°C MAX. BTA/BTB06 Series THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Parameter Junction to case (AC) Junction to ambient Value Unit °C/W TO-220AB 1.8 TO-220AB Insulated 2.7 TO-220AB TO-220AB Insulated 60 °C/W PRODUCT SELECTOR Voltage (xxx) Sensitivity Type Package X 50 mA Standard TO-220AB X X 50 mA Snubberless TO-220AB BTA/BTB06-xxxC X X 25 mA Standard TO-220AB BTA/BTB06-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB06-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB06-xxxTW X X 5 mA Logic level TO-220AB Part Number 600 V 800 V BTA/BTB06-xxxB X BTA/BTB06-xxxBW BTB: non insulated TO-220AB package ORDERING INFORMATION BT A 06 - 600 BW (RG) TRIAC SERIES INSULATION: A: insulated B: non insulated VOLTAGE: 600: 600V 800: 800V CURRENT: 6A SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS SW: 10mA LOGIC LEVEL TW: 5mA LOGIC LEVEL PACKING MODE Blank: Bulk RG: Tube OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA/BTB06-xxxyz BTA/BTB06-xxxyz 2.3 g 250 Bulk BTA/BTB06-xxxyzRG BTA/BTB06-xxxyz 2.3 g 50 Tube Note: xxx = voltage, y = sensitivity, z = type 3/6 BTA/BTB06 Series Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus case temperature (full cycle). P (W) IT(RMS) (A) 8 7 7 6 BTB 6 BTA 5 5 4 4 3 3 2 2 0 1 IT(RMS)(A) 1 0 1 2 3 4 5 6 Fig. 3: Relative variation of thermal impedance versus pulse duration. 0 Tc(°C) 0 25 Fig. 4: values). 50 On-state 75 100 characteristics 125 (maximum ITM (A) K=[Zth/Rth] 100 1E+0 Tj max. Vto = 0.85 V Rd = 60 mΩ Zth(j-c) 1E-1 Tj=Tj max 10 Zth(j-a) VTM(V) tp(s) 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Surge peak on-state current versus number of cycles. 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) ITSM (A) 1000 70 60 Tj initial=25°C t=20ms 50 dI/dt limitation: 50A/µs One cycle ITSM Non repetitive Tj initial=25°C 40 100 30 Repetitive Tc=105°C 20 I²t 10 0 tp (ms) Number of cycles 1 4/6 10 100 1000 10 0.01 0.10 1.00 10.00 BTA/BTB06 Series Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.5 2.0 IGT 1.5 IH & IL 1.0 0.5 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Standard Types 2.4 2.2 2.0 1.8 1.6 1.4 SW 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 BW/CW (dV/dt)c (V/µs) 1.0 10.0 100.0 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 C 1.6 1.4 B 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 TW 6 5 4 3 2 1 (dV/dt)c (V/µs) 1.0 Tj(°C) 10.0 100.0 0 0 25 50 75 100 125 5/6 BTA/BTB06 Series PACKAGE MECHANICAL DATA TO-220AB / TO-220AB Ins. DIMENSIONS B REF. C Millimeters Inches b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Typ. 15.20 Max. Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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