B ® BTA/BTB12 series 1!!!!!!!!! !! !!!!!!12A Triacs logic level ! MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 and 800 V IGT (Q ) 1 5 to 50 mA G A1 A2 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB12 and T12 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless versions (BTA/BTB...W and T12 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface directly with low power drivers such as microcontrollers. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734) A1 A2 G D2PAK (T12-G) A2 A1 A2 G A1 A2 G TO-220AB Insulated (BTA12) TO-220AB (B ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range Value Unit 12 A A D²PAK/TO-220AB Tc = 105°C TO-220AB Ins. Tc = 90°C F = 50 Hz t = 20 ms 120 F = 60 Hz t = 16.7 ms 126 tp = 10 ms 78 A² s F = 120 Hz Tj = 125°C 50 A/µs tp = 10 ms Tj = 25°C VDRM/VRRM V tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C + 100 S 1/4 BTA/BTB12 series !!!!!!!!!!!!!!!!!!12A Triacs logic level ! ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol IGT (1) VGT Test Conditions VD = 12 V Quadrant RL = 30 Ω VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 100 mA IL IG = 1.2 IGT T12 TW SW CW BW 35 5 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 I - II - III MIN. 0.2 I - III ■ mA V V MAX. 35 10 15 35 50 mA MAX. 50 10 25 50 70 mA 60 15 30 60 80 MIN. 500 20 40 500 1000 V/µs MIN. A/ms VD = 67 %VDRM gate open Tj = 125°C (dI/dt)c (2) (dV/dt)c = 0.1 V/µs Unit T1235 II dV/dt (2) BTA/BTB12 - 3.5 6.5 - - (dV/dt)c = 10 V/µs Tj = 125°C Tj = 125°C - 1 2.9 - - Without snubber Tj = 125°C 6.5 - - 6.5 12 STANDARD (4 Quadrants) Symbol Test Conditions IGT (1) VD = 12 V Quadrant RL = 30 Ω I - II - III IV MAX. ALL MAX. ALL MIN. VGT VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C IH (2) IT = 500 mA IL IG = 1.2 IGT BTA/BTB12 I - III - IV VD = 67 %VDRM gate open Tj = 125°C (dV/dt)c (2) (dI/dt)c = 5.3 A/ms Tj = 125°C B 25 50 50 100 1.3 Unit mA V 0.2 V MAX. 25 50 mA MAX. 40 50 mA 80 100 MIN. 200 400 V/µs MIN. 5 10 V/µs II dV/dt (2) C STATIC CHARACTERISTICS Symbol VT (2) Test Conditions ITM = 17 A tp = 380 µs Tj = 25°C Value Unit MAX. 1.55 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V Rd (2) Dynamic resistance Tj = 125°C MAX. 35 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 2/4 BTA/BTB12 series !!!!!!!! !!!!!!!!!12A Triacs logic level ! OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode BTA/BTB12-xxxyz BTA/BTB12-xxxyz 2.3 g 250 Bulk BTA/BTB12-xxxyzRG BTA/BTB12-xxxyz 2.3 g 50 Tube T1235-xxxG T1235xxxG 1.5 g 50 Tube T1235-xxxG-TR T1235xxxG 1.5 g 1000 Tape & reel Note: xxx = voltage, yy = sensitivity, z = type Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2-1: RMS on-state current versus case temperature (full cycle). P (W) IT(RMS) (A) 16 14 12 10 8 6 4 2 0 IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 11 12 Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm),full cycle. 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 BTB/T12 BTA Tc(°C) 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] IT(RMS) (A) 3.5 D2PAK (S=1cm2) 3.0 1E+0 Zth(j-c) 2.5 2.0 1E-1 Zth(j-a) 1.5 1.0 0.5 0.0 Tamb(°C) 0 25 50 75 tp(s) 100 125 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/4 BTA/BTB12 series !!!!!!!!! !!!!!! !12A Triacs logic level ! Fig. 4: values). On-state characteristics (maximum Fig. 5: Surge peak on-state current versus number of cycles. ITM (A) ITSM (A) 100 Tj max 10 Tj=25°C Tj max. Vto = 0.85 V Rd = 35 mΩ VTM(V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 130 120 110 100 90 80 70 60 50 40 30 20 10 0 One cycle Repetitive Tc=90°C Number of cycles 1 10 100 1000 Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). ITSM (A), I²t (A²s) IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] Tj initial=25°C dI/dt limitation: 50A/µs 1000 t=20ms Non repetitive Tj initial=25°C 2.5 2.0 IGT ITSM 1.5 100 I²t IH & IL 1.0 0.5 tp (ms) 10 0.01 Tj(°C) 0.10 1.00 10.00 Fig. 8-1: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (BW/CW/T1235). -20 0 20 40 60 80 100 120 140 Fig. 8-2: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (TW). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 2.8 4.5 2.4 SW 4.0 3.5 2.0 C 1.6 0.0 -40 2.5 1.2 BW/CW/T1235 0.8 0.4 0.0 0.1 TW 3.0 B 2.0 1.5 1.0 (dV/dt)c (V/µs) 1.0 10.0 (dV/dt)c (V/µs) 0.5 100.0 0.0 0.1 1.0 10.0 100.0 4/4