KBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products Single-Phase Bridge Rectifier, 35A KBPC3506 Thru KBPC3512 FEATURES UL recognition file number E320098 Universal 3-way terminals: snap-on, wire wrap-around, or PCB mounting High surge current capability Low thermal resistance Solder dip 260°C, 40s Compliant to RoHS TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. MECHANICAL DATA Case: KBPC, KBPC-W Epoxy meets UL 94 V-O flammability rating Terminals: Nickel plated on faston lugs or silver plated on wire leads,solderable per J-STD-002 and JESD22-B102. Suffix letter “W” added to indicate wire leads(e.g. KBPC3506W). Polarity: As marked Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 21g (0.74 ozs) 1.135 (28.8) 1.115 (28.3) Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) 0.732 (18.6) 0.692 (17.6) 1.135 (28.8) 1.115 (28.3) ~ ~ - KBPC KBPC-W Hole for #10 Screw 0.220 (5.59) DIA. 0.200 (5.08) + 0.732 (18.6) 0.692 (17.6) 1.122 (28.5) 1.10 (28) 0.672 (17.1) 0.632 (16.1) AC 0.672 (17.1) 0.632 (16.1) 1.122 (28.5) 1.10 (28) 0.582 (14.8) 0.542 (13.8) 0.034 (0.86) 0.030 (0.76) 0.470 (11.9) 0.430 (10.9) 0.042 (1.07) 0.038 (0.97) DIA. 0.445 (11.3) 0.421 (10.7) 0.732 (18.6) 0.692 (17.6) 0.094 (2.4) DIA. 1.25 (31.8) MIN. 0.445 (11.3) 0.421 (10.7) All dimensions in inches (millimeters) www.nellsemi.com Page 1 of 3 0.25 (6.35) 0.840 (21.3) 0.740 (18.8) KBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 35A V RRM 600V to 1200V I FSM 400A IR 5 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) KBPC35 PARAMETER UNIT SYMBOL 06 08 10 12 1000 1200 V V Maximum repetitive peak reverse voltage V RRM 600 800 Maximum RMS voltage V RMS 420 560 700 840 Maximum DC blocking voltage V DC 600 800 1000 1200 Maximum average forward rectified output current (Fig.1) I F(AV) 35 A I FSM 400 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 660 A 2s RMS isolation voltage from case to leads V ISO 2500 V TJ -40 to 150 ºC T STG -25 to 125 ºC Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range Storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TEST CONDITIONS SYMBOL Maximum instantaneous forward drop per diode I F = 17.5A VF Maximum reverse DC current at rated DC blocking T A = 25°C PARAMETER voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz KBPC35 06 08 10 12 1.1 V 5 IR UNIT µA 3000 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) KBPC35 PARAMETER SYMBOL Typical thermal resistance R θJC (1) UNIT 06 08 10 1.4 12 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 3 KBPC35 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 On-state current and voltage Fig.2 Case temperature vs on-state average current 50 Peak on-average c urrent (A) Peak on-state c urrent (A) 100 10 1.0 0.1 40 30 20 10 Resistive or lnductive load T j = 25ºC Pulse Width = 300µs 0.01 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Fig.3 On-state surge current vs cycles 500 Single Half-Sine Wave (JEDEC Method) 400 300 200 100 T j = 150ºC 0 1 10 100 Cycles @50Hz www.nellsemi.com 0 50 100 Case temperature (℃) Peak on-state voltage (V) on-state surge current (A) Mounted on a 220x220x50 mm AL plate heatsink Page 3 of 3 150