RoHS KBJ35 Series RoHS SEMICONDUCTOR Nell High Power Products Single-Phase Bridge Rectifier, 35A KBJ3504 Thru KBJ3512 17.5 10.2 31 7.6 Ø3 .3 7.6 20.5 3.3 6 0.8 9.5 All dimensions in millimeters FEATURES UL recognition file number E320098 Typical IR less than 2.0 µA High surge current capability Low thermal resistance Compliant to RoHS Isolation voltage up to 2500V TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for big power supply, field supply for DC motor, industrial automation applications. ADVANTAGE International standard package Epoxy meets UL 94 V-O flammability rating Small volume, light weight Small thermal resistance High heat-conduction rate Low temperature rise Weight: 10g (0.35 ozs) www.nellsemi.com Page 1 of 3 PRIMARY CHARACTERRISTICS IF(AV) 35A V RRM 400V to 1200V I FSM 400A IR 5 µA VF 1.10V T J max. 150ºC RoHS KBJ35 Series RoHS SEMICONDUCTOR Nell High Power Products MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted) KBJ35 PARAMETER UNIT SYMBOL 04 06 08 10 12 Maximum repetitive peak reverse voltage V RRM 400 600 800 1000 1200 V Peak reverse non-repetitive voltage V RSM 500 700 900 1100 1300 V Maximum DC blocking voltage V DC 400 600 800 1000 1200 V Maximum average forward rectified output current I F(AV) 35 A I FSM 400 A Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing I 2t 660 A 2s RMS isolation voltage from case to leads V ISO 2500 V Peak forward surge current single sine-wave superimposed on rated load Operating junction storage temperature range Storage temperature range TJ -40 to 150 ºC T STG -40 to 125 ºC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TEST CONDITIONS PARAMETER Maximum instantaneous forward drop per diode I F = 17.5A Maximum reverse DC current at rated DC blocking T A = 25°C voltage per diod T A = 150°C KBJ35 SYMBOL 04 06 VF 08 UNIT 10 12 1.10 V 5 IR µA 500 THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted) KBJ35 TEST CONDITIONS PARAMETER UNIT SYMBOL 04 Typical thermal resistance junction to case Single-side heat dissipation, sine half wave Mounting torque ± 10 % A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink M3 R θJC (1) Approximate weight Notes (1) With heatsink, single side heat dissipation, half sine wave. (2) M3 screw. Ordering Information Tabel Device code KBJ 35 10 3 - Module type: “KBJ” Package , 1Ø Bridge 2 - I F(AV) rating:"35" for 35A 3 - Voltage code:code x 100 = VRRM 1 www.nellsemi.com Page 2 of 3 06 08 10 12 1.0 °C/W 2.5 N.m 10 g RoHS KBJ35 Series RoHS SEMICONDUCTOR Nell High Power Products On-state current and voltage Peak on-state current (A) 100 10 1.0 0.1 Tj=25°C Pulse Width=300µs 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Peak on-state voltage (V) Case temperature vs on-state average current On-state average current (A) 50 Mounted on a 220×220×50 mm AL plate heatsink 40 30 20 10 Resistive or Inductive load 0 100 50 0 150 case temperature (℃) On-state surge current vs cycles On-state surge current (A) 500 Single Half-Sine Wave (JEDEC Method) 400 300 200 100 Tj=150°C 0 1 10 Cycles @50Hz www.nellsemi.com Page 3 of 3 100