MP35S SEMICONDUCTOR RoHS RoHS Nell High Power Products Single-Phase Bridge Rectifier, 35A MP3506S Thru MP3512S FEATURES UL recognition file number E320098 High surge current capability Low thermal resistance Solder dip 260°C, 40s Compliant to RoHS TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for power supply, home appliances, office equipment, industrial automation applications. - - 10.50 9.80 3.50 14.0 Min. Ø 1.30(typ.) - 5.08 All dimensions in inches www.nellsemi.com Page 1 of 3 28.50 5.08 ~ ~ 5.08 + 28.50 ~ - Polarity: As marked Mounting Torque: 20 inches-lbs. max. (M5 screw) Weight: 21g (0.74 ozs) Ø 5.2 + ~ - Case: GBPC / MP Epoxy meets UL 94 V-O flammability rating Terminals: Nickel or silver plated on wire leads,solderable per J-STD-002 and JESD22-B102. Suffix letter “S” added to indicate wire leads (e.g. MP3506S). - MECHANICAL DATA MP35S SEMICONDUCTOR RoHS RoHS Nell High Power Products PRIMARY CHARACTERRISTICS IF(AV) 35A V RRM 600V to 1200V I FSM 400A IR 2 µA VF 1.1V T J max. 150ºC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) MP35..S PARAMETER UNIT SYMBOL 06 08 10 12 1000 1200 V Maximum repetitive peak reverse voltage V RRM 600 800 Maximum RMS voltage V RMS 420 560 700 840 V V DC 600 800 1000 1200 V Maximum DC blocking voltage Maximum average forward rectified output current (Fig.1) Peak forward surge current single sine-wave superimposed on I F(AV) 35 A I FSM 400 A I 2t 660 A 2s V ISO 2500 V TJ -40 to 150 ºC T STG -25 to 125 ºC rated load Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing RMS isolation voltage from case to leads Operating junction storage temperature range Storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) TEST CONDITIONS SYMBOL Maximum instantaneous forward drop per diode I F = 17.5A VF Maximum reverse DC current at rated DC blocking T A = 25°C PARAMETER voltage per diode T A = 150°C Typical junction capacitance per diode 4V, 1MHz MP35..S 06 08 10 12 1.1 V 2 IR UNIT µA 3000 CJ pF 300 THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) MP35..S PARAMETER SYMBOL Typical thermal resistance R θJC (1) UNIT 06 08 10 1.4 12 °C/W Notes (1) With heatsink (2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with M5 screw www.nellsemi.com Page 2 of 3 MP35S SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 On-state current and voltage Fig.2 Case temperature vs on-state average current 100 50 Peak on-average current (A) Peak on-state current (A) Mounted on a 220x220x50 mm AL plate heatsink 10 1.0 0.1 40 30 20 10 Resistive or lnductive load T J = 25°C Pulse Width = 300 µs 0.01 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 Peak on-state voltage(V) 500 On-state surge current(A) Single half-sine-wave (JEDEC method) 400 300 200 100 T J = 150°C 0 10 100 Cycles @50Hz www.nellsemi.com 100 Case temperature (ºC) Fig.3 On-state surge current vs. cycles 1 50 Page 3 of 3 150