NKD250/NKJ250/NKC250 Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Standard Diodes, 250 A ( MAGN-A-PAK Power Modules) 23.5 2.8x0.8+0.1 25+1 53+1 35 38+1 22.5 3-M8 SCREWS 80 4-Ø6.5 92 MAGN A-PAK • High surge capability 60+3 39+1 37+1 • UL approved file E320098 • High current capability 25+1 52+1 FEATURES 47+1 115+3 • High voltage ratings up to 2000 V • 3000 VRMS isolating voltage with non-toxic substrate All dimensions in millimeters • Industrial standard package • Compliant to RoHS APPLICATIONS ~ + - NKD - + + NKJ + - - NKC • Rectifying bridge for large motor drives • Rectifying bridge for large UPS • Rectifying power supplier • Frequency converters PRODUCT SUMMARY IF(AV) 250 A Type Modules - Diode, High Voltage MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) IF(RMS) IFSM I2t CHARACTERISTICS TC TC VALUES UNITS 250 A 100 °C 392 A 100 °C 50 Hz 11000 60 Hz 11600 50 Hz 605 60 Hz 552 A I2√t 2s kA 6050 kA2√t VRRM Range 800 to 2000 V TStg, TJ Range - 40 to 150 °C www.nellsemi.com Page 1 of 3 NKD250/NKJ250/NKC250 Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 NKD250 NKJ250 IRRM MAXIMUM AT T J MAXIMUM mA 20 NKC250 FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature Maximum RMS forward current Maximum peak, one-cycle forward, non-repetitive surge current IF(AV) I F(RMS) IFSM TEST CONDITIONS 180° conduction, half sine wave 180° conduction, half sine wave at TC = 100 °C t = 10 ms t = 8.3 ms t = 10 ms Maximum I2 t for fusing I 2t t = 8.3 ms UNITS 250 A 100 °C 392 A 11.0 No voltage reapplied t = 8.3 ms t = 10 ms VALUES 100 % V RRM reapplied kA 11.6 605 Sinusoidal half wave, initial TJ = TJ maximum 552 424 kA2s 390 Maximum I2√t for fusing I2√t t = 0.1ms to 10 ms, no voltage reapplied 6050 kA2√t Maximum forward voltage drop V FM Ipk = 1000 A, TJ = 25 °C, = 10t pms sine pulse 1.40 V BLOCKING PARAMETER SYMBOL RMS insulation voltage VINS Maximum peak reverse and off-state leakage current IRRM TEST CONDITIONS VALUES UNITS 3000 V TJ = TJ maximum, rated V RRM applied 20 mA TJ = 25 °C 20 µA VALUES UNITS - 40 to 150 °C t=1s THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating and storage temperature range TJ, TStg Maximum thermal resistance, junction to ca se per junction RthJC Maximum thermal resistance, case to heatsink RthC-hs Mounting torque ± 10 % SMAP to heatsink, M6 busbar to MAP, M8 TEST CONDITIONS DC operation K/W 0.044 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Approximate weight Case style www.nellsemi.com 0.14 4 900 See dimensions - link at the end of datasheet Page 2 of 3 Nm 12 g MAGN-A-PAK NKD250/NKJ250/NKC250 Series SEMICONDUCTOR RoHS RoHS Nell Semiconductors Fig.1 On-state current vs. voltage characteristic Fig.2 Transient thermal impedance(junction-case) 0.15 Transient thermal impedance (°C/W) On-state peak voltage (V) 3.5 3 2.5 2 1.5 1 0.5 0.09 0.06 0.03 0 10000 1000 100 0.12 00.1 0.001 0.1 Time (s) On-state current (A) Fig.4 Case temperature vs. on-state average current Fig.3 Power consumption vs. average current 160 140 400 180 Conduction Angle 60° Case temperature (°C) Maximum power consumption (W) 500 90°120° 180° 30° 300 200 100 180 Conduction Angle 120 100 30° 60° 90° 120°180° 80 60 40 0 0 50 100 150 200 250 300 0 50 100 150 200 250 300 On-state average current (A) On-state average current (A) Fig.6 I 2 t Characteristic Fig.5 On-state surge current vs. cycles 12 650 10 550 I 2 t ( 10³A²S ) On-state surge current (KA) 10 1 8 6 450 350 250 4 2 150 1 10 100 Timet (ms) Cycles @50Hz www.nellsemi.com 10 1 Page 3 of 3