RoHS NKT500/NKH500 Series RoHS SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 500A (SUPER MAGN-A-PAK Power Modules) 48 50 38 48 66+1 36+1 4-Ø6.5 14 SUPER MAGN-A-PAK 112+1 128+1 FEATURES 150+3 • High voltage 3-M10 SCREWS • Electrically isolated by DBC ceramic (AI 2O3) 2.8x0.8+0.1 • 3500 V RMS isolating voltage 50 • Glass passivated chips 60 • High surge capability 53 22 • Industrial standard package • Modules uses high voltage power thyristor/diodes in two basic configurations • Simple mounting All dimensions in millimeters • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS • DC motor control and drives K2 G2 • Battery charges ~ + - • Welders G1 K1 • Power converters NKT • Lighting control • Heat and temperature control • Ups ~ + G1 K1 NKH PRODUCT SUMMARY IT(AV) 500 A MAJOR RATINGS AND CHARACTERISTICS VALUE UNITS IT(AV) 85 °C 500 A IT(RMS) 85 °C 785 50 Hz 16000 60 Hz 16800 50 Hz 1280 60 Hz 1167 SYMBOL ITSM I2t CHARACTERISTICS I2√t A kA2s 12800 kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 RoHS NKT500/NKH500 Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 NKT500 NKH500 IRRM /I DRM AT 125 °C mA 40 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave ,50Hz Maximum RMS on-state current lT(RMS) 180° conduction, half sine wave ,50Hz ,TC = 85°C Maximum peak, one-cycle, on-state non-repetitive surge current ITSM I 2t A 85 °C 785 16000 t = 8.3 ms 16800 No voltage reapplied t = 8.3 ms t = 10 ms t = 8.3 ms Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied UNITS 500 t = 10 ms t = 10 ms Maximum I 2t for fusing VALUES A 1280 1167 kA2s 896 818 Maximum I 2√t for fusing 2√ I t t = 0.1 ms to 10 ms, no voltage reapplied 12800 Maximum on-state voltage drop VTM lTM = 1500A, TJ = 25 °C, 180° conduction 1.7 Maximum forward voltage drop VFM IFM = 1500A, TJ = 25 °C, 180° conduction 1.4 kA2√s V Maximum holding current IH Anode supply = 12 V initial I T = 30 A, TJ = 25 °C 300 Maximum latching current IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C 500 mA SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr TEST CONDITIONS VALUES TJ = 25 °C ,gate current = 1A, dlg/dt = 1 A/µs 2 V d = 0.67 % V DRM 4 UNITS μs Typical tum-off time tq ITM = 750A ; dl/dt = -60 A/µs ; TJ = TJ maximum, VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω 200 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 40 mA 50 Hz, circuit to base, all terminals shorted, 25°C, 1s 3500 V T J = T J maximum, linear to V D = 80% V DRM 1000 V/μs Maximum peak reverse and off-state leakage current l RRM , l DRM T J = 125°C RMS isolation Voltage V ISO Critical rate of rise of off-state voltage dV/dt www.nellsemi.com Page 2 of 4 RoHS NKT500/NKH500 Series RoHS SEMICONDUCTOR Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak gate current Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage - VGM Maximum required DC gate voltage to trigger 5.0 VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt V 2 Anode supply = 12 V, resistive load; Ra = 1 Ω I GT Maximum gate voltage that will not trigger A 20 t p ≤ 5 ms, TJ = TJ maximum TJ = 25 °C gate current to trigger W 3 VGT Maximum required DC UNITS 200 mA 0.25 V 10 mA 1000 A/μs VALUES UNITS - 40 to 125 °C TJ = TJ maximum, 67% V DRM applied T J = T J maximum, I TM = 400A rated V DRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS junction operating and storage temperature range TJ, Tstg Maximum thermal resistance, junction to case per junction RthJC DC operation Typical thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.01 A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 6 to 8 Mounting torque ± 10 % 0.065 °C/W SMAP to heatsink , M6 busbar to SMAP , M10 Approximate weight Case style N.m 12 to 15 1800 g 63.5 oz. SUPER MAGN-A-PAK ORDERING INFORMATION TABLE Device code www.nellsemi.com NKT 500 1 2 / 16 3 1 - Module type: NKT for (Thyristor + Thyristor) module NKH for (Thyristor + Diode) module 2 - Current rating: IT(AV) 3 - Voltage code x 100 = V RRM Page 3 of 4 RoHS NKT500/NKH500 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 On-state current vs. voltage characteristics Fig.2 Transient thermal impedance(junction-case) 3.6 On-state peak voltage (V) 3.2 Transient thermal impedance (°C/W) 0.07 T J = 125°C 2.8 2.4 2 1.6 1.2 0.8 100 1000 0.06 0.05 0.04 0.03 0.02 0.01 0 0.001 10000 0.01 0.1 On-state current (A) Time (s) Fig.4 Case temperature vs. on-state average current Fig.3 Power consumption vs. average current 140 180° 0 600 ase temperature (°C) Maximum power consumption (W) 800 120° 180 90° Conduction Angle 60° 30° 400 200 120 180 0 100 Conduction Angle 80 60 40 20 30° 60° 90° 120° 180° 0 0 0 100 200 300 400 500 0 600 On-state average current (A) 200 400 600 800 1000 On-state average current (A) 2 Fig.5 On-state surge current vs cycles Fig.6 I t characteristics 1500 18 16 1300 14 A S (1000A S) 1100 2 12 10 2 On-state surge current (KA) 10 1 8 900 700 500 6 4 300 1 10 100 Cycles @50Hz www.nellsemi.com Page 4 of 4 10 1 Time (ms)