RoHS NKT350/NKH350 Series RoHS SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 350A ( MAGN-A-PAK Power Modules) 23.5 2.8x0.8±0.1 25±1 MAGN A-PAK FEATURES 53±1 35 38±1 40 3- M8 SCREWS 80 • High voltage 4- 6.3 92 • Electrically isolated by DBC ceramic (AI 2O3) 115+3 • 3500 V RMS isolating voltage • Industrial standard package • Simple mounting • UL approved file E320098 • Compliant to RoHS All dimensions in millimeters • Designed and qualified for multiple level APPLICATIONS • DC motor control and drives K2 G2 • Battery charges ~ - + • Welders G1 K1 • Power converters NKT • Lighting control • Heat and temperature control • Ups ~ - + G1 K1 PRODUCT SUMMARY IT(AV) 350 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 350 A IT(AV) 85 °C IT(RMS) 85 °C 550 50 Hz 9300 60 Hz 9765 ITSM I2t 50 Hz 432 60 Hz 394 I2√t 4325 A kA2s kA2√s VDRM/VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 NKH 60±3 39±1 37±1 8 • Modules uses high voltage power thyristor/diodes in two basic configurations 25±1 52±1 • Glass passivated chips 47±1 • High surge capability RoHS NKT350/NKH350 Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 NKT350 NKH350 IRRM /I DRM AT 125 °C mA 40 FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave ,50Hz Maximum RMS on-state current lT(RMS) 180° conduction, half sine wave ,50Hz ,TC = 85°C Maximum peak, one-cycle, on-state non-repetitive surge current ITSM I 2t A 85 °C 550 9300 t = 8.3 ms 9765 No voltage reapplied t = 8.3 ms Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms t = 8.3 ms UNITS 350 t = 10 ms t = 10 ms Maximum I 2t for fusing VALUES A 432 394 302 kA2s 275 Maximum I 2√t for fusing 2 I √t t = 0.1 ms to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM lTM= 900A, TJ = 25 °C, 180° conduction 1.7 Maximum forward voltage drop VFM IFM= 900A, TJ = 25 °C, 180° conduction 1.4 4325 kA2√s V Maximum holding current IH Anode supply = 12 V initial I T = 1 A, TJ = 25 °C 200 Maximum latching current IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C 400 mA BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted, 25 ºC ,1s Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM www.nellsemi.com Page 2 of 4 VALUES UNITS 40 mA 3500 V 500 V/μs RoHS NKT350/NKH350 Series RoHS SEMICONDUCTOR Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM - VGT 3 t p ≤ 5 ms, TJ = TJ maximum UNITS W A 10 V VGT 2 Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 °C I GT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 50 to 200 0.25 mA V TJ = TJ maximum, 67% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs 10 mA 150 A/μs VALUES UNITS - 40 to 125 °C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS junction operating and storage temperature range TJ, Tstg Maximum thermal resistance, junction to case per junction RthJC DC operation 0.10 Typical thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.017 Mounting torque ± 10 % IAP to heatsink, M6 busbar to IAP, M8 °C/W A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. Approximate weight Case style www.nellsemi.com 4 N.m 12 900 g 31.7 oz. MAGN-A-PAK Page 3 of 4 RoHS NKT350/NKH350 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 On-state current vs. voltage characteristics Fig.2 Transient thermal impedance(junction-case) 0.12 On-state peak voltage (V) 3.5 Transient thermal impedance (°C/W) 4 T J = 125°C 3 2.5 2 1.5 1 0.5 100 1000 10000 0.10 0.08 0.06 0.04 0.02 0.00 0.001 0.01 0.1 On-state current (A) Time (s) Fig.3 Power consumption vs. average current Fig.4 Case temperature vs. on-state average current 140 180° 500 Case temperature (°C) Maximum power consumption (W) 600 120° 90° 60° 400 30° 300 200 100 120 100 80 60 180° 40 30° 20 60° 90° 120° 0 0 0 70 140 210 280 0 350 On-state average current (A) 90 180 270 360 450 540 On-state average current (A) 2 Fig.5 On-state surge current vs cycles Fig.6 I t characteristics 10 500 9 8 400 A S (1000A S) 2 7 6 5 300 2 On-state surge current (KA) 10 1 4 200 3 2 1 10 100 100 Time (ms) Cycles @50Hz www.nellsemi.com 10 1 Page 4 of 4