RoHS NKT600/NKH600 Series RoHS SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 600A (SUPER MAGN-A-PAK Power Modules) 48 50 38 48 66+1 36+1 4-Ø6.5 SUPER MAGN -A-PAK 14 FEATURES 112+1 128+1 • High voltage 150+3 • Electrically isolated by DBC ceramic (AI 2O3) • 3500 V RMS isolating voltage 3-M10 SCREWS • Industrial standard package 2.8x0.8+0.1 • High surge capability 60 53 50 • Modules uses high voltage power thyristor/diodes in two basic configurations 22 • Glass passivated chips • Simple mounting • UL approved file E320098 • Compliant to RoHS All dimensions in millimeters • Designed and qualified for multiple level APPLICATIONS • DC motor control and drives K2 G2 • Battery charges ~ • Welders + - • Power converters G1 K1 NKT • Lighting control • Heat and temperature control • Ups ~ + G1 K1 NKH PRODUCT SUMMARY IT(AV) 600 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUE UNITS 600 A IT(AV) 85 °C IT(RMS) 85 °C 942 50 Hz 18000 60 Hz 18900 50 Hz 1620 60 Hz 1478 ITSM I2t I2√t A kA2s 16200 kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 RoHS NKT600/NKH600 Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 NKT600 NKH600 IRRM /I DRM AT 125 °C mA 50 FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle, on-state non-repetitive surge current SYMBOL lT(AV) lT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave ,50Hz 180° conduction, half sine wave ,50Hz ,TC = 85°C I 2t A 85 °C 942 18000 t = 8.3 ms 18900 No voltage reapplied t = 8.3 ms t = 10 ms t = 8.3 ms Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied UNITS 600 t = 10 ms t = 10 ms Maximum I 2t for fusing VALUES A 1620 1478 kA2s 1134 1033 Maximum I 2√t for fusing 2√ I t t = 0.1 ms to 10 ms, no voltage reapplied 16200 Maximum on-state voltage drop VTM lTM= 1800A, TJ = 25 °C, 180° conduction 1.9 Maximum forward voltage drop VFM lFM = 1800A, TJ = 25 °C, 180° conduction 1.6 kA2√s V Maximum holding current IH Anode supply = 12 V initial I T = 30 A, TJ = 25 °C 300 Maximum latching current IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C 500 mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES T J = 25°C, gate current = 1A, dI g /dt= 1 A/µs 2.0 Typical delay time td Typical rise time tr V d = 0.67% V DRM 4.0 Typical turn-off time tq I TM = 750A, dI/dt = -60 A/µs, T J = T J maximum V R = 50V, dV/dt = 20 V/dt, gate 0V, 100Ω 200 UNITS µs BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 mA 50 Hz, circuit to base, all terminals shorted, 25°C, 1s 3500 V T J = T J maximum, linear to V D = 80% V DRM 1000 V/μs Maximum peak reverse and off-state leakage current l RRM , l DRM T J = 125°C RMS isolation Voltage V ISO Critical rate of rise of off-state voltage dV/dt www.nellsemi.com Page 2 of 4 RoHS NKT600/NKH600 Series RoHS SEMICONDUCTOR Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM Maximum peak gate current Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage - VGM Maximum required DC gate voltage to trigger 5.0 VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt V 2 Anode supply = 12 V, resistive load; Ra = 1 Ω I GT Maximum gate voltage that will not trigger A 20 t p ≤ 5 ms, TJ = TJ maximum TJ = 25 °C gate current to trigger W 3 VGT Maximum required DC UNITS 200 mA 0.25 V 10 mA 1000 A/μs VALUES UNITS - 40 to 125 °C TJ = TJ maximum, 67% V DRM applied T J = T J maximum, I TM = 400A rated V DRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS junction operating and storage temperature range TJ, Tstg Maximum thermal resistance, junction to case per junction RthJC DC operation 0.06 Typical thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.010 A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 6 to 8 Mounting torque ± 10 % °C/W SMAP to heatsink , M6 busbar to SMAP , M10 Approximate weight Case style N.m 12 to 15 1800 g 63.5 oz. SUPER MAGN-A-PAK ORDERING INFORMATION TABLE Device code www.nellsemi.com NKT 600 1 2 / 16 3 1 - Module type: NKT for (Thyristor + Thyristor) module NKH for (Thyristor + Diode) module 2 - Current rating: IT(AV) 3 - Voltage code x 100 = V RRM Page 3 of 4 RoHS NKT600/NKH600 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 On-state current vs. voltage characteristics Fig.2 Transient thermal impedance(junction-case) 3.6 Transient thermal impedance (°C/W) 0.07 On-state peak voltage (V) 3.2 T J = 125°C 2.8 2.4 2 1.6 1.2 0.8 100 1000 0.06 0.05 0.04 0.03 0.02 0.01 0 0.001 10000 0.01 0.1 On-state current (A) Time (s) Fig.4 Case temperature vs. on-state average current Fig.3 Power consumption vs. average current 140 180° 600 120° 180 0 ase temperature (°C) Maximum power consumption (W) 800 90° Conduction Angle 60° 30° 400 200 120 180 0 100 Conduction Angle 80 60 40 20 30° 60° 90° 120° 180° 0 0 0 100 200 300 400 500 0 600 On-state average current (A) 200 400 600 800 1000 On-state average current (A) 2 Fig.5 On-state surge current vs cycles Fig.6 I t characteristics 1900 18 16 1600 14 A S (1000A S) 1300 2 12 10 2 On-state surge current (KA) 10 1 8 1000 700 400 6 4 100 1 10 100 Cycles @50Hz www.nellsemi.com Page 4 of 4 10 1 Time (ms)