RoHS RoHS NKET800 Series SEMICONDUCTOR Nell High Power Products 8. 5 Phase Control Thyristor, 800A (Super MAGN- A-PAK Power Modules) Super MAGN-A-PAK 76 58 4- 2- M 12 132 150 180 FEATURES • High voltage 120 • Electrically isolated by DBC ceramic (AI 2O3) • 3500 V RMS isolating voltage • Industrial standard package • High surge capability 78 • Glass passivated chips 15 • Modules uses high voltage power thyristor in basic configurations • Simple mounting • UL approved file E320098 • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS • DC motor control and drives K G • Battery charges • Welders 1 3 • Power converters • Lighting control • Heat and temperature control PRODUCT SUMMARY IT(AV) 800 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES IT(AV) 85 ° C IT(RMS) 85 ° C 1256 50 Hz 16000 60 Hz 16800 50 Hz 1280 60 Hz 1166 ITSM I2t I2√t 800 12800 UNITS A A kA2s kA2√s VDRM / VRRM Range 400 to 1600 V TJ Range -40 to 125 ° C Page 1 of 4 NKET800 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 NKET800 IRRM /I DRM AT 125 ° C mA 40 FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle, on-state non-repetitive surge current SYMBOL IT(AV) I T(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave ,50Hz 180° conduction, half sine wave ,50Hz ,TJ = 85°C I 2t UNITS 800 A 85 °C 1256 t = 10 ms 16000 t = 8.3 ms 16800 No voltage reapplied t = 10 ms Maximum I 2t for fusing VALUES t = 8.3 ms Sine half wave, initial TJ = TJ maximum 100%V RRM reapplied t = 10 ms t = 8.3 ms A 1280 1166 kA2s 896 815 Maximum I 2√t for fusing 2√ I t t = 0.1 ms to 10 ms, no voltage reapplied 12800 kA2√s Maximum on-state voltage drop VTM ITM = 1500A, TJ = 25 ° C, 180° conduction 2.0 V Maximum holding current Maximum latching current IH Anode supply = 12 V initial I T = 30 A, TJ = 25 ° C IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 ° C 40~200 mA 400 BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 ° C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM Page 2 of 4 VALUES UNITS 40 mA 2500 (1min) 3500 (1s) V 500 V/μs NKET800 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger TEST CONDITIONS VALUES PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM - VGT 3 t p ≤ 5 ms, TJ = TJ maximum UNITS W A 10 V VGT 0.7~2.0 Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 ° C I GT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 30~200 mA 0.25 V 10 mA 150 A/μs TJ = TJ maximum, 66.7% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS VALUES TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 125 Maximum thermal resistance, junction to ca se per junction RthJC DC operation 0.054 Maximum thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.009 A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 6 to 14 Mounting torque ± 10 % IAP to heatsink ,M8 busbar to IAP ,M8 UNITS °C ° C/W Approximate weight 3500 g 123.4 oz. Super MAGN-A-PARK Case style ORDERING INFORMATION TABLE 800 Device code 1 - Module type 2 - Current rating: I T(AV) 3 - Voltage code x 100 = V RRM N.m NKET800 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products On-state current vs voltage characteristic On-state peak voltage (V) Transient thermal impedance (° C/W) Transient thermal impedance(junction-case) Time (s) On-state current (A) Case temperature vs. on-state average current 180° 120° 90° 60° 30° ase temperature (° C) Maximum power consumption (W) Power consumption vs. average current 60° 30° 30° I 2 t Characteristic On-state surge current vs cycles I 2 t ( 10 ³A²S ) On-state surge current (KA) 90° On-state average current (A) On-state average current (A) Cycles @50Hz 90° Timet (ms) 180° 120° 180°