IGBT MODULE PBMB200A6 H-Bridge 200A 600V CIRCUIT OUTLINE DRAWING 8- fasten- tab No 110 Dimension(mm) Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PBMB200A6 Unit VCES VGES IC ICP PC Tj Tstg VISO 600 +/ - 20 200 400 780 -40 to +150 -40 to +125 2500 V V W °C °C V FTOR 3 N•m Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A Min. Typ. Max. 4.0 - 2.1 20,000 0.15 0.25 0.2 0.45 2.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=200A,VGE=15V VCE=5V,IC=200mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 3.6 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 200 400 A Symbol Test Condition Min. Typ. Max. VF trr IF=200A,VGE=0V IF=200A,VGE=-10V,di/dt=200A/µs - 1.9 0.15 2.4 0.25 Unit V µs Test Condition Min. Typ. Max. Unit Junction to Case - - 0.16 0.38 °C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF Symbol IGBT DIODE Rth(j-c) PBMB200A6 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 400 V GE =20V TC=25℃ 16 12V 400A 10V Collector Current I C (A) 300 200 9V 100 8V Collector to Emitter Voltage V CE (V) I C=80A 15V 14 200A 12 10 8 6 4 2 7V 0 0 2 4 6 8 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 200A 12 10 8 6 4 2 0 4 8 12 16 RL=1.5Ω TC=25℃ 16 350 14 300 12 250 10 8 200 VCE=300V 150 6 200V 100 2 50 0 20 0 0 150 300 VGE =0V f=1MHZ TC=25℃ 5000 2000 1000 500 0.7 0.6 0.5 toff 0.4 0.3 ton tf 0.2 200 0.1 0.2 0.5 1 2 5 10 20 900 VCC=300V R G=3.6Ω VGE =±15V TC=25℃ 0.9 0.8 10000 100 750 1 Switching Time t (μs) Capacitance C (pF) Coes Cres 600 Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 20000 450 Total Gate Charge Qg (nC) 100000 Cies 4 100V Gate to Emitter Voltage V GE (V) 50000 20 400 400A 14 0 16 50 Collector to Emitter Voltage V CE (V) 100 200 0 tr 0 50 100 Collector Current IC (A) 150 200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) I C=80A 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) PBMB200A6 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 2 Switching Time t (μs) 400 V CC=300V I C=200A V G=±15V TC=25℃ TC=25℃ toff ton 300 tr 1 0.5 tf 0.2 0.1 0.05 250 200 150 100 50 1 10 0 100 0 1 2 3 Fig.10- Reverse Bias Safe Operating Area (Typical) Fig.9- Reverse Recovery Characteristics (Typical) 1000 500 IF=200A TC=25℃ 500 trr 100 R G=3.6Ω V GE =±15V TC≦125℃ Collector Current I C (A) 200 200 100 50 20 4 Forward Voltage V F (V) Series Gate Impedance R G (Ω) IRrM 50 20 10 5 2 1 0.5 10 0.2 200 400 600 800 1000 0.1 1200 0 200 400 Fig.11- Transient Thermal Impedance 5x10 -1 FRD 2x10 -1 IGBT 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25℃ 2x10 -3 1x10 -3 -5 10 600 Collector to Emitter Voltage V CE (V) -di/dt (A/μs) (℃/W) 0 (J-C) 5 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125℃ 350 Forward Current I F (A) 5 (Typical) 1 Shot Pulse 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 800