NIEC PBMB200A6

IGBT MODULE
PBMB200A6
H-Bridge 200A 600V
CIRCUIT
OUTLINE DRAWING
8- fasten- tab No 110
Dimension(mm)
Approximate Weight : 650g
MAXMUM RATINGS (Tc=25°C)
Item
Collector-Emitter Voltage
Gate - Emitter Voltage
DC
1 ms
Collector Current
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Module Base to Heatsink
Mounting Torque
Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time
Fall Time
Turn-off Time
Symbol
PBMB200A6
Unit
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
600
+/ - 20
200
400
780
-40 to +150
-40 to +125
2500
V
V
W
°C
°C
V
FTOR
3
N•m
Symbol
ICES
IGES
VCE(sat)
VGE(th)
Cies
tr
ton
tf
toff
Test Condition
A
Min.
Typ.
Max.
4.0
-
2.1
20,000
0.15
0.25
0.2
0.45
2.0
1.0
2.6
8.0
0.3
0.4
0.35
0.7
VCE=600V,VGE=0V
VGE=+/- 20V,VCE=0V
IC=200A,VGE=15V
VCE=5V,IC=200mA
VCE=10V,VGE=0V,f=1MHz
VCC= 300V
RL= 3 ohm
RG= 3.6 ohm
VGE= +/- 15V
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
DC
1 ms
Forward Current
Characteristic
µs
Unit
200
400
A
Symbol
Test Condition
Min.
Typ.
Max.
VF
trr
IF=200A,VGE=0V
IF=200A,VGE=-10V,di/dt=200A/µs
-
1.9
0.15
2.4
0.25
Unit
V
µs
Test Condition
Min.
Typ.
Max.
Unit
Junction to Case
-
-
0.16
0.38
°C/W
Peak Forward Voltage
Reverse Recovery Time
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IF
IFM
Unit
mA
µA
V
V
pF
Symbol
IGBT
DIODE
Rth(j-c)
PBMB200A6
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Fig.1- Output Characteristics (Typical)
TC=25℃
400
V GE =20V
TC=25℃
16
12V
400A
10V
Collector Current I C (A)
300
200
9V
100
8V
Collector to Emitter Voltage V CE (V)
I C=80A
15V
14
200A
12
10
8
6
4
2
7V
0
0
2
4
6
8
0
10
0
4
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Voltage V CE (V)
200A
12
10
8
6
4
2
0
4
8
12
16
RL=1.5Ω
TC=25℃
16
350
14
300
12
250
10
8
200
VCE=300V
150
6
200V
100
2
50
0
20
0
0
150
300
VGE =0V
f=1MHZ
TC=25℃
5000
2000
1000
500
0.7
0.6
0.5
toff
0.4
0.3
ton
tf
0.2
200
0.1
0.2
0.5
1
2
5
10
20
900
VCC=300V
R G=3.6Ω
VGE =±15V
TC=25℃
0.9
0.8
10000
100
750
1
Switching Time t (μs)
Capacitance C (pF)
Coes
Cres
600
Fig.6- Collector Current vs. Switching Time (Typical)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
20000
450
Total Gate Charge Qg (nC)
100000
Cies
4
100V
Gate to Emitter Voltage V GE (V)
50000
20
400
400A
14
0
16
50
Collector to Emitter Voltage V CE (V)
100
200
0
tr
0
50
100
Collector Current IC (A)
150
200
Gate to Emitter Voltage V GE (V)
Collector to Emitter Voltage V CE (V)
I C=80A
12
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
TC=125℃
16
8
Gate to Emitter Voltage V GE (V)
Collector to Emitter Voltage V CE (V)
PBMB200A6
Fig.8- Forward Characteristics of Free Wheeling Diode
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
2
Switching Time t (μs)
400
V CC=300V
I C=200A
V G=±15V
TC=25℃
TC=25℃
toff
ton
300
tr
1
0.5
tf
0.2
0.1
0.05
250
200
150
100
50
1
10
0
100
0
1
2
3
Fig.10- Reverse Bias Safe Operating Area (Typical)
Fig.9- Reverse Recovery Characteristics (Typical)
1000
500
IF=200A
TC=25℃
500
trr
100
R G=3.6Ω
V GE =±15V
TC≦125℃
Collector Current I C (A)
200
200
100
50
20
4
Forward Voltage V F (V)
Series Gate Impedance R G (Ω)
IRrM
50
20
10
5
2
1
0.5
10
0.2
200
400
600
800
1000
0.1
1200
0
200
400
Fig.11- Transient Thermal Impedance
5x10 -1
FRD
2x10 -1
IGBT
1x10 -1
5x10 -2
2x10 -2
1x10 -2
5x10 -3
TC=25℃
2x10 -3
1x10 -3 -5
10
600
Collector to Emitter Voltage V CE (V)
-di/dt (A/μs)
(℃/W)
0
(J-C)
5
Transient Thermal Impedance Rth
Peak Reverse Recovery Current I RrM (A)
Reverse Recovery Time trr (ns)
TC=125℃
350
Forward Current I F (A)
5
(Typical)
1 Shot Pulse
10 -4
10 -3
10 -2
Time t (s)
10 -1
1
10 1
800