PRHMB100A6 IGBT MODULE Chopper 100A 600V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heat sink Bus Bar to Main Terminals Mounting Torque Symbol PRHMB100A6 VCES VGES IC IC PC Tj Tstg VISO 600 +/ - 20 100 200 400 -40 to +150 -40 to +125 2500 FTOR 2.04 Unit V V A W °C °C V N•m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time ICES IGES VCE(sat) VGE(th) C ies ｔr ｔon ｔf ｔoff Turn-on Time Fall Time Turn-off Time Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V Min. Typ. Max. Unit 4.0 − − − − 2.1 10000 0.15 0.25 0.2 0.45 1.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 mA µA V V pF FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current Characteristic DC 1 ms IF IFM Symbol Unit 100 200 Test Condition µs A Min. Typ. Max. Unit Peak Forward Voltage VF IF=100A,VGE=0V - 1.9 2.4 V Reverse Recovery Time trr IF=100A,VGE=-10V,di/dt=100A/µs - 0.15 0.25 µs Min. Typ. Max. Unit - - 0.31 0.65 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case PRHMB100A6 IGBT MODULE Chopper 100A 600V Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ VGE =20V I C=40A 15V 10V 150 Collector Current I C (A) 16 12V 100 9V 50 8V Collector to Emitter Voltage V CE (V) 200 14 TC=25℃ 200A 100A 12 10 8 6 4 2 7V 0 0 2 4 6 8 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 100A 12 10 8 6 4 2 0 4 8 12 16 R L=3Ω TC=25℃ 16 350 300 12 250 10 200 8 VCE =300V 150 6 200V 100 4 100V 50 0 20 14 2 0 100 200 300 0 400 Total Gate Charge Qg (nC) Gate to Emitter Voltage V GE (V) Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 50000 1 VGE =0V f=1MHZ TC=25℃ Cies 20000 Coes Cres VCC=300V RG=7.5Ω VGE =±15V TC=25℃ 0.9 0.8 Switching Time t (μs) 10000 Capacitance C (pF) 20 400 200A 14 0 16 5000 2000 1000 500 0.7 0.6 0.5 toff 0.4 0.3 200 0.2 ton tf 100 0.1 tr 50 0.2 0.5 1 2 5 10 20 50 Collector to Emitter Voltage V CE (V) 100 200 0 0 20 40 60 Collector Current IC (A) 80 100 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) IC=40A 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) PRHMB100A6 IGBT MODULE Chopper 100A 600V Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) Fig.7- Series Gate Impedance vs. Switching Time (Typical) 200 5 V CC=300V I C=100A V G=±15V TC=25℃ TC=125℃ 160 toff ton 1 Forward Current I F (A) Switching Time t (μs) 2 TC=25℃ 180 tr 0.5 tf 0.2 140 120 100 80 60 40 0.1 20 0.05 1 10 0 100 0 1 3 1000 500 IF=100A TC=25℃ R G=7.5Ω V GE=±15V TC≦125℃ 500 200 200 Collector Current I C (A) trr 100 50 20 I RrM 10 4 Fig.10- Reverse Bias Safe Operating Area (Typical) Fig.9- Reverse Recovery Characteristics (Typical) 100 50 20 10 5 2 1 0.5 0.2 100 200 300 400 500 0.1 600 0 200 400 Fig.11- Transient Thermal Impedance 1 5x10 -1 FRD 2x10 -1 1x10 IGBT -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25℃ 2x10 -3 1x10 -3 -5 10 600 Collector to Emitter Voltage V CE (V) -di/dt (A/μs) (℃/W) 0 (J-C) 5 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 2 Forward Voltage V F (V) Series Gate Impedance R G (Ω) 1 Shot Pulse 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 800