PDMB100B12C2 IGBT MODULE Dual 100A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heat sink Bus Bar to Main Terminals Mounting Torque Symbol PDMB100B12C2 VCES VGES IC IC PC Tj Tstg VISO 1200 +/ - 20 100 200 500 -40 to +150 -40 to +125 2500 FTOR 2.04 Unit V V A W °C °C V N•m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time ICES IGES VCE(sat) VGE(th) C ies ｔr ｔon ｔf ｔoff Turn-on Time Fall Time Turn-off Time Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 6 ohm RG=10 ohm VGE= +/- 15V Min. Typ. Max. Unit 4.0 − − − − 1.9 8300 0.25 0.40 0.25 0.80 2.0 1.0 2.4 8.0 0.45 0.7 0.35 1.10 mA µA V V pF FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current Characteristic DC 1 ms IF IFM Symbol Unit 100 200 Test Condition µs A Min. Typ. Max. Unit Peak Forward Voltage VF IF=100A,VGE=0V - 1.9 2.4 V Reverse Recovery Time trr IF=100A,VGE=-10V,di/dt=200A/µs - 0.2 0.3 µs Min. Typ. Max. Unit - - 0.24 0.42 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case PDMB100B12C2 PDMB100B12C2 IGBT MODULE Dual 100A 1200V Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 200 VGE=20V 12V IC=50A Collector to Emitter Voltage V CE (V) 15V Collector Current I C (A) 150 9V 100 8V 50 7V 0 0 2 TC=25℃ 16 10V 4 6 8 14 100A 12 10 8 6 4 2 0 10 0 4 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 8 12 16 R L=6Ω TC=25℃ 16 700 14 600 12 500 10 8 400 V CE=600V 6 300 400V 200 4 200V 2 100 0 0 20 0 150 300 Gate to Emitter Voltage VGE (V) 450 600 750 Total Gate Charge Qg (nC) Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 1.6 20000 VGE=0V f=1MHZ TC=25℃ 10000 Cies 5000 2000 Coes 1000 500 VCC=600V R G=10Ω VGE=±15V TC=25℃ 1.4 1.2 Switching Time t (μs) 50000 Capacitance C (pF) 20 tOFF 1 0.8 tf 0.6 0.4 200 Cres 100 50 0.1 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 50 100 200 tON tr 0.2 0 0 25 50 Collector Current IC (A) 75 100 Gate to Emitter Voltage VGE (V) 100A 4 16 800 200A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 0 8 Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=50A 200A PDMB100B12C2 IGBT MODULE Dual 100A 1200V Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) (Typical) 10 VCC=600V IC=100A VGE=±15V TC=25℃ TC=25℃ TC=125℃ toff ton 2 Forward Current I F (A) 5 Switching Time t (μs) 200 tr 1 tf 0.5 0.2 150 100 50 0.1 0.05 5 10 20 50 100 0 200 0 1 2 I F=100A TC=25℃ 200 trr 100 Collector Current I C (A) 100 50 20 10 IRrM RG=10Ω VGE=±15V TC≦125℃ 50 20 10 5 2 1 0.5 2 0.2 100 200 300 400 500 0.1 600 0 400 800 Fig.11- Transient Thermal Impedance 1 5x10 -1 2x10 -1 FRD IGBT 1x10 -1 5x10 -2 2x10 -2 1x10 -2 TC=25℃ 5x10 -3 1 Shot Pulse 2x10 -3 10 -5 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/μs) (℃/W) 0 (J-C) 1 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 200 5 4 Fig.10- Reverse Bias Safe Operating Area Fig.9- Reverse Recovery Characteristics (Typical) 500 3 Forward Voltage V F (V) Series Gate Impedance RG (Ω) 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 1600