IGBT MODULE PBMB75B12 H-Bridge 75A 1200V CIRCUIT OUTLINE DRAWING １ ２ 14 20 13 19 ３ ５ 26 32 25 31 8- fasten- tab No 110 Dimension(mm) Approximate Weight : 430g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PBMB75B12 Unit VCES VGES IC ICP PC Tj Tstg VISO 1200 +/ - 20 75 150 400 -40 to +150 -40 to +125 2500 V V W °C °C V FTOR 2 N•m Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A Min. Typ. Max. 4.0 - 1.9 6300 0.25 0.40 0.25 0.80 2.0 1.0 2.4 8.0 0.45 0.70 0.35 1.00 VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=75A,VGE=15V VCE=5V,IC=75mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 8 ohm RG= 13 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 75 150 A Symbol Test Condition Min. Typ. Max. VF trr IF=75A,VGE=0V IF=75A,VGE=-10V,di/dt=150A/µs - 1.9 0.2 2.4 0.3 Unit V µs Test Condition Min. Typ. Max. Unit Junction to Case - - 0.3 0.6 °C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF Symbol IGBT DIODE Rth(j-c) PBMB75B12 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 150 VGE=20V IC=30A Collector Current I C (A) 100 9V 75 50 8V 25 7V 0 2 4 6 8 Collector to Emitter Voltage V CE (V) 10V 15V 125 0 TC=25℃ 16 12V 14 75A 12 10 8 6 4 2 0 10 0 4 Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 10 8 6 4 2 12 16 700 14 600 12 500 10 8 400 VCE =600V 6 300 400V 200 4 200V 2 100 0 0 100 200 300 400 500 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Fig.6- Collector Current vs. Switching Time (Typical) 50000 10000 2000 1000 Coes 500 200 Cres 100 VCC=600V R G=13Ω VGE=±15V TC=25℃ 1.4 Cies 5000 600 1.6 VGE=0V f=1MHZ TC=25℃ 20000 Capacitance C (pF) 16 RL=8Ω TC=25℃ 0 20 1.2 Switching Time t (μs) Collector to Emitter Voltage V CE (V) 12 8 20 tOFF 1 0.8 tf 0.6 0.4 50 0.2 20 0 tON tr 0.1 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage V CE (V) 50 100 200 0 25 50 Collector Current IC (A) 75 Gate to Emitter Voltage V GE (V) 75A 4 16 800 150A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 0 8 Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=30A 150A PBMB75B12 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 10 VCC=600V IC=75A VGE=±15V TC=25℃ ton 1 tr 0.5 tf 0.2 0.1 100 75 50 5 10 20 50 100 0 200 0 1 2 4 Fig.10- Reverse Bias Safe Operating Area (Typical) Fig.9- Reverse Recovery Characteristics (Typical) 500 500 IF=75A TC=25℃ 200 trr 100 200 Collector Current I C (A) 100 50 20 10 5 I RrM 2 RG=13Ω VGE=±15V TC≦125℃ 50 20 10 5 2 1 0.5 0.2 0 150 300 0.1 450 0 400 800 fig11-Tansient Thermal Impedance 5 2 1 5x10 2x10 FRD -1 IGBT -1 -1 1x10 5x10 2x10 1x10 5x10 2x10 -2 -2 -2 Tc=25℃ -3 1 Shot Pulse -3 -5 10 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/μs) Tansient Thermal Impedance Rth (J-C) (ﾟC/W) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 3 Forward Voltage V F (V) Series Gate Impedance RG (Ω) 1 TC=125℃ 25 0.05 0.02 TC=25℃ 125 toff 2 Forward Current I F (A) Switching Time t (μs) 5 (Typical) 150 -4 10 10 -3 -2 10 Time t （s） -1 10 1 10 1 1600