IGBT MODULE PCHMB150B12 Chopper 150A 1200V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 320g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PCHMB150B12 Unit VCES VGES IC ICP PC Tj Tstg VISO 1200 +/ - 20 150 300 730 -40 to +150 -40 to +125 2500 3 2 V V FTOR Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A W °C °C V N•m Min. Typ. Max. 4.0 - 1.9 12600 0.25 0.40 0.25 0.80 3.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=150A,VGE=15V VCE=5V,IC=150mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 4 ohm RG= 3.6 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 150 300 A Symbol Test Condition Min. Typ. Max. VF trr IF=150A,VGE=0V IF=150A,VGE=-10V,di/dt=300A/µs - 1.9 0.2 2.4 0.3 Unit V µs Test Condition Min. Typ. Max. Unit Junction to Case - - 0.16 0.32 °C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF Symbol IGBT DIODE Rth(j-c) PCHMB150B12 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 300 200 9V 150 100 8V 50 7V 0 0 2 TC=25℃ 16 I C=75A 10V 15V 250 Collector Current I C (A) 12V Collector to Emitter Voltage V CE (V) VGE =20V 4 6 8 14 150A 12 10 8 6 4 2 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 4 8 12 16 RL=4Ω TC=25℃ 16 700 14 600 12 500 10 400 8 VCE =600V 300 6 400V 200 4 200V 100 2 0 20 0 150 300 Gate to Emitter Voltage V GE (V) 450 600 750 900 1050 0 1200 Total Gate Charge Qg (nC) Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 1.4 50000 V GE =0V f=1MHZ Cies TC=25℃ 20000 VCC=600V RG= 3.0 Ω VGE =±15V TC=25℃ 1.2 Switching Time t (μs) 10000 Capacitance C (pF) 20 5000 Coes 2000 1000 500 Cres 1 tOFF 0.8 tf 0.6 0.4 200 0.2 tON tr 100 50 0.1 0.2 0.5 1 2 5 10 20 50 Collector to Emitter Voltage V CE (V) 100 200 0 0 25 50 75 100 Collector Current IC (A) 125 150 Gate to Emitter Voltage V GE (V) 150A 0 16 800 300A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ I C=75A 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 16 300A PCHMB150B12 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) Fig.7- Series Gate Impedance vs. Switching Time (Typical) 300 10 VCC=600V IC=150A VGE=±15V TC=25℃ Switching Time t (μs) tr 2 ton 1 tf 0.5 0.2 200 150 100 50 0.1 0.05 1 2 5 10 20 50 100 0 200 0 1 2 Fig.9- Reverse Recovery Characteristics (Typical) 500 500 RG=3.0Ω VGE =±15V TC≦125℃ 200 trr Collector Current I C (A) 100 100 50 20 IRrM 10 4 Fig.10- Reverse Bias Safe Operating Area (Typical) IF=150A TC=25℃ 200 3 Forward Voltage VF (V) Series Gate Impedance RG (Ω) 50 20 10 5 2 1 0.5 5 0.2 150 300 450 600 750 0.1 900 0 400 800 Fig.11- Transient Thermal Impedance 1 FRD 5x10 -1 IGBT 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25℃ 2x10 -3 1x10 1 Shot Pulse -3 10 -5 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/μs) (℃/W) 0 (J-C) 2 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125℃ 250 toff Forward Current I F (A) 5 TC=25℃ 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 1600