NTE NTE5375

NTE5374 & NTE5375
Silicon Controlled Rectifier (SCR)
for High Speed Switching
Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, VDRM, VRRM
NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non–Repetitive Peak Off–State Voltage, VDSM
NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non–Repetitive Peak Reverse Blocking Voltage, VRSM
NTE5374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5375 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Average On–State Current (TC = +85°C, Single phase, 50Hz, 180° sinewave), IT(AV) . . . . . . . 183A
RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A
Continuous On–State Current, IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A
Peak One–Cycle Surge (Non–Repetitive) On–State Current, ITSM
(t = 10ms, half sinewave, TJ(initial) = +125°C, VRM = 0.6VRRMmax) . . . . . . . . . . . . . . . 3500A
(t = 10ms, half sinewave, TJ(initial) = +125°C, VRM ≤ 10V) . . . . . . . . . . . . . . . . . . . . . . . 3850A
Maximum Permissible Surge Energy (TJ(initial) = +125°C), I2t
(t = 10ms, VRM = 0.6VRRMmax) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61.3 x 103A2sec
(t = 10ms, VRM ≤ 10V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74.1 x 103A2sec
(t = 3ms, VRM ≤ 10V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54.5 x 103A2sec
Peak Forward Gate Current (Anode Positive with Respect to Cathode), IFGM . . . . . . . . . . . . . . 18A
Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), VFGM . . . . . . . . . . . . . . 12V
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Rate of Rise of Off–State Voltage (To 80% VDRM, Gate Open–Circuit), dv/dt . . . . . . . . . . . 200V/µs
Rate of Rise of On–State Current (Repetitive, Gate Drive 20V, 20Ω with tr ≤ 1µs), di/dt . . 500A/µs
Peak On–State Voltage (ITM = 600A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.96V
Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4V
Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.937mΩ
Repetitive Peak Off–State Current (At Rated VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Repetitive Peak Reverse Current (At Rated VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Maximum Gate Current Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 1A), IGT . . 200mA
Maximum Gate Voltage Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 1A), VGT . . . . . 3V
Maximum Ratings and Electrical Characteristics (Cont’d): (TJ = +125°C unless otherwise specified)
Maximum Holding Current (TJ = +25°C, VA = 6V, IA = 1A), IH . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Maximum Gate Voltage Which Will Not Trigger Any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . 0.25V
Typical Stored Charge (ITM = 300A, dir/dt 20A/µs, VRM = 50V, 50% Chord Value), Qrr . . . . . . 50µC
Maximum Circuit Commutated Turn–Off Time, tq
(ITM = 300A, dir/dt = 20A/µs, dv/dt = 200V/µs to 80% VDRM) . . . . . . . . . . . . . . . . . . 30 – 40µs
Typical Circuit Commutated Turn–Off Time, tq
(ITM = 300A, dir/dt = 20A/µs, dv/dt = 20V/µs to 80% VDRM) . . . . . . . . . . . . . . . . . . . 25 – 35µs
Operating Temperature Range, THS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04/W
1.443 (36.68) Max
(Across Corners)
ÇÇÇ
ÇÇÇ
1.031 (26.18) Dia
(Ceramic)
.643 (16.35)
For No. 6 Screw
For No. 6 Screw
Cathode
.350 (8.89)
Dia Max
Gate
(White)
Cathode
(Red)
8.100
(205.74)
Max
(Terminals
1, 2, & 3)
1.212 (30.8) Dia Max
3.625
(92.07)
Max
.156 (3.96) Max
.630 (16.0)
3/4–16 UNF–2A
(Terminal 4)
Anode
1.077 (27.35) Max