UTC X0202/A SCR SENSITIVE SCRs DESCRIPTION The X0202/A SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies, capacitive ignition circuit,…… 1 FEATURES: *IT(RMS) : 1.25A *VDRM/VRRM :600/800V TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS (unless otherwise specified ) PARAMETERS Peak Repetitive Forward and Reverse Blocking Voltage (Tj=110°C, RGK=1kΩ) X0202 X0202A RMS On-State Current (TI=55°C) 180°C conduction angle Average On-State Current (TI=55°C) 180°C conduction angle Non Repetitive Surge Peak on-state Current (tp=8.3ms Tj=25°C) Non Repetitive Surge Peak on-state Current (tp=10ms Tj=25°C) I t Value for fusing (tp=10ms Tj=25°C) Critical Rate Of Rise Of On-state Current IG=2*IGT,tr≤100ns, f=60Hz, Tj=125°C Peak Gate Current (p=20µs Tj=125°C) Average Gate Power Dissipation (Tj=125°C) Storage Junction Temperature Range Operating Junction Temperature Range UTC SYMBOL VDRM, VRRM IT(RMS) IT(AV) ITSM ITSM RATINGS UNIT V 600 800 1.25 A 0.8 A 25 A 22.5 A It 2.5 A2S dI/dt 50 A/µs IGM PG(AV) Tstg Tj 1.2 0.2 -40~150 -40~125 A W °C °C UNISONIC TECHNOLOGIES CO. LTD 1 QW-R301-005,A UTC X0202/A SCR ELECTRICAL CHARACTERISTICS(Tj=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT 5 500 µA µA 1.45 200 0.8 V µA V VDRM=VRRM, RGK=1kΩ Peak Forward or Reverse Blocking Current Tj =25°C Tj =125°C Peak Forward On-State Voltage Gate Trigger Current Gate Trigger Voltage Gate Non-Trigger Voltage IDRM, IRRM VTM IGT VGT VGD Holding Current Latch Current Critical Rate of Rise of Off-State Voltage Peak Reversed Gate Voltage Threshold Voltage Dynamic Resistance IH IL dv/dt VRG VTO Rd ITM= 2.5A, tp=380µs VD=12V, RL=140Ω VD=12V, RL=140Ω VD=VDRM, RL=3.3kΩ,RGK=1kΩ, (Tj=125°C) IT=50mA, RGK=1kΩ IG=1mA, RGK=1kΩ VD=67%VDRM, RGK=1kΩ, (Tj=110°C) IRG=10µ A (Tj=125°C) (Tj=125°C) 0.1 V 5 6 10 mA mA V/µs 8 0.9 200 V V mΩ THERMAL CHARACTERISTICS SYMBOL Rth(j-I) Rth(j-a) PARAMETER Junction to leads Junction to ambient VALUE 60 150 UNIT °C/W °C/W TYPICAL CHARACTERISTICS CURVE Figure 1.Maximum Average Power Dissipation vs. Average On-stage Current 1.2 P(W) Figure 2-1.Average and D.C. On-state Current vs.Lead Temperature 1.4 IT(av)(A) α=180° D.C. 1.2 1.0 1.0 0.8 0.8 0.6 α=180° 0.6 0.4 360° 0.2 0.0 0.0 IT(av)(A) 0.1 0.2 UTC 0.3 0.4 0.5 0.6 0.2 α 0.7 0.4 0.8 0.9 0.0 0 Tlead (℃) 25 50 75 100 125 UNISONIC TECHNOLOGIES CO. LTD 2 QW-R301-005,A UTC X0202/A SCR Figure 2-2.Average and D.C. On-state Current vs.Ambient Temperature(Device Mounted On FR4 with Recomended Pad Layout) Figure 3. Relative Variation of Thermal Impedance Junction to Ambient vs.Pulse Duration 1.4 1.0 1.2 1.0 D.C. 0.8 0.1 0.6 α=180° 0.4 0.2 0.0 tp(s) Tlead(℃) 0 1.50 25 75 50 100 Figure 4.Relative Variation of Gate Trigger Current,Holding Current and Latching Current Versus Junction Temperature (typical values). IGT,IH,IL[Tj]/GT,IH,IL[Tj]=25℃ 0.01 1E-2 125 1E-1 1E+0 1E+2 1E+1 5E+2 Figure 5.Relative Variation of Holding Current vs.Gate-cathode Resistance (typical values). IH[Rgk]/IH[Rgk=1kΩ ] 4.0 Tj=25℃ 3.5 1.25 3.0 1.00 IH&IL (Rgk=1kΩ ) 0.75 2.0 1.5 0.50 IGT 1.0 0.25 0.5 Tj(℃) 0.0 -40 10.0 2.5 -20 0 20 40 60 80 100 120 140 Figure 6.Relative Variation of dV/dt immunity vs.Gate-Cathode Resistance (typical values). dV/dt[Rgk]/dV/dt[Rgk=1kΩ ] Tj=125(℃) VD=0.67*VDRM Rgk(kΩ ) 0.0 1E-2 1E-1 1E+0 1E+1 Figure 7.Relative Variation of dV/dt Immunity vs Gate-cathode Capacitance (typical values). 20 18 dV/dt[Rgk]/dV/dt[Rgk=1kΩ ] 16 Tj=125(℃) VD=0.67*VDRM Rgk=1kΩ ) 14 12 10 1.0 8 6 4 Rgk(kΩ ) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 UTC 2 0 Cgk(nF) 0 2 4 6 8 10 12 14 16 18 20 22 UNISONIC TECHNOLOGIES CO. LTD 3 QW-R301-005,A UTC X0202/A SCR Figure 8.Surge Peak On-state Current vs.Number of Cycles. ITSM(A) 25 300 100 tp=10ms 20 Figure 9.Non-repetitive Surge Peak on-state Current for a Sinusoidal pulse with width tp<10ms,and Corresponding Value of I t ITSM(A),I2t(A2S) Tjinital=25℃ dI/dt Limitation ITSM one cycle Tjinitial=25(℃) Nonrepetitive 15 10 10 5 0 Number of cycles Tamb=25(℃) Repetitive 1 I2t 10 1 0.01 1000 100 tp(ms) 0.10 1.00 10.00 Figure 10.On-state Characteristics (maximum values) 3E+1 ITM(A) Tj max Vto=0.9V 1E+1 Rd=200mΩ ) TJ=TJ max 1E+0 1E-1 0.5 VTM(V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R301-005,A