BC 546 ... BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 546 BC 547 BC 548/549 Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V Collector-Emitter-voltage B shorted VCES 85 V 50 V 30 V Collector-Base-voltage E open VCB0 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 6V 6V 5V 1 Power dissipation – Verlustleistung Ptot 500 mW ) Collector current – Kollektorstrom (DC) IC 100 mA Peak Coll. current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Group A Group B Group C DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 :A hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110...220 200...450 420...800 VCE = 5 V, IC = 100 mA hFE typ. 120 typ. 200 typ.400 Small signal current gain – Stromverst. hfe typ. 220 typ. 330 typ. 600 Input impedance – Eingangsimpedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance – Ausgangsleitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsrückwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 6 01.11.2003 General Purpose Transistors BC 546 ... BC 549 Characteristics, Tj = 25/C Kennwerte, Tj = 25/C Min. Typ. Max. Collector saturation voltage – Kollektor-Sättigungsspannung IC = 10 mA, IB = 0.5 mA VCEsat – 80 mV 200 mV IC = 100 mA, IB = 5 mA VCEsat – 200 mV 600 mV IC = 10 mA, IB = 0.5 mA VBEsat – 700 mV – IC = 100 mA, IB = 5 mA VBEsat – 900 mV – Base saturation voltage – Basis-Sättigungsspannung Base-Emitter voltage – Basis-Emitter-Spannung VCE = 5 V, IC = 2 mA VBE 580 mV 660 mV 700 mV VCE = 5 V, IC = 10 mA VBE – – 720 mV Collector-Emitter cutoff current – Kollektorreststrom VCE = 80 V BC 546 ICES – 0.2 nA 15 nA VCE = 50 V BC 547 ICES – 0.2 nA 15 nA VCE = 30 V BC 548 ICES – 0.2 nA 15 nA VCE = 30 V BC 549 ICES – 0.2 nA 15 nA Collector-Emitter cutoff current – Kollektorreststrom VCE = 80 V, Tj = 125/C BC 546 ICES – – 4 :A VCE = 50 V, Tj = 125/C BC 547 ICES – – 4 :A VCE = 30 V, Tj = 125/C BC 548 ICES – – 4 :A VCE = 30 V, Tj = 125/C BC 549 ICES – – 4 :A fT – 300 MHz – CCB0 – 3.5 pF 6 pF CEB0 – 9 pF – Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, f = 1 MHz Noise figure – Rauschmaß VCE = 5 V, IC = 200 :A BC 547 F – 2 dB 10 dB RG = 2 kS f = 1 kHz, BC 548 F – 1.2 dB 4 dB ) f = 200 Hz BC 549 F – 1.2 dB 4 dB Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ 250 K/W 1) RthA BC 556 ... BC 559 BC 546A BC 547A BC 548A BC 546B BC 547B BC 548B BC 549B BC 547C BC 548C BC 549C 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 01.11.2003 7