NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR’s) Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud TO–48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On–State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Peak Surge (Non–Repetitive) On–State Current, ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Peak Gate–Power Dissipation (IGT ≤ for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Temperature Range, Toper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Symbol Test Conditions Min Typ Peak Off–State Current IDRM, IRRM TJ = +100°C, Gate Open, VDRM &VRRM – – 2.0 mA Maximum On–State Voltage (Peak) VTM TC = +25°C – – 1.6 V DC Holding Current IHO TC = +25°C, Gate Open – – 50 mA DC Gate Trigger Current IGT Anode Voltage = 12Vdc, RL = 30Ω, TC =+ 25°C – – 30 mA DC Gate Controlled Turn–On Time TGT IGT = 150mA , tD+tR – 2.5 – µs TC = +100°C, Gate Open – 100 – V/µs Critical Rate of Rise of Off–State Voltage Critical dv/dt Max Unit .562 (14.28) Max Cathode Anode Gate 1.260 (32.0) Max .595 (15.1) Max .445 (11.3) Max 1/4–28 UNF–2A Isolated Stud