WTPB8A60TW

WTPB8A60TW
ect
ode Thyri
st
or
Bi-Dir
ire
ctiional Tri
Trio
rist
sto
Features
■ Repetitive Peak off-State Voltage:600V
■ R.M.S On-State Current(IT(RMS)=8A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=11A
■ High Commutation dV/dt.
General Description
General purpose switching and phase control applications. These
devices are intended to be interfaced directly to micro- controllers,
logic integrated circuits and other low power gate trigger circuits such
as fan speed and temperature modulation control, lighting control and
static switching relay.
Absolute Maximum Ratings
(TJ=25℃ unless otherwise specified)
Symbol
VDR
M
IT(RMS)
Parameter
Value
Units
600
V
8
A
80/84
A
Circuit Fusing Considerations (t p= 10 ms)
36
A2 s
W
Peak Repetitive Forward Blocking Voltage(gate open)
(Note 1)
Forward Current RMS (All Conduction Angles, Tc=58℃)
ITS
M
I2t
PGM
Peak Forward Surge Current,
(1/2 Cycle, Sine Wave, 50/60 Hz)
Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)
5
PG(AV)
Average Gate Power — Forward, (Over any 20ms period)
1
W
IFG
M
VRGM
Peak Gate Current — Forward, Tj = 125°C
(20 µs, 120 PPS)
2
A
Peak Gate Voltage — Reverse, Tj = 125°C
(20 µs, 120 PPS)
10
V
TJ,
Junction Temperature
-40~125
℃
Tstg
Storage Temperature
-40~150
℃
Not
e1
Note1
e1:: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC
may switch to the on-state. The rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
1.6
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
60
℃/W
Rev. A Mar. 2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WTPB8A60TW
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Characteristics
Symbol
IDRM//IRRM
Min
Typ. Max
Unit
Peak Forward or Reverse Blocking Current
Tc=25℃
-
-
5
μA
(V DRM=V RRM,)
Tc=125℃
-
-
1
mA
-
-
1.55
V
T2+G+
-
-
5
T2+G-
-
-
5
T2-G-
-
-
5
T2+G+
-
-
1.2
T2+G-
-
-
1.2
T2-G-
-
-
1.2
Gate threshold voltage(Tj=125℃, VD= VDRM)
0.2
-
-
V
Critical rate of rise of commutation Voltage (VD=0.67VDRM)
400
-
-
V/μs
Critical rate of rise On-State voltage(VD=400V,Tj=125℃)
4.5
-
-
A/μs
Forward “On” Voltage(Note2)
VTM
(ITM = 11A Peak @ TA = 25°C)
Gate Trigger Current (Continuous dc)
IGT
VGT
VGD
dV/dt
dIcom/dt
(VD = 6 Vdc, RL = 10 Ohms)
Gate Trigger Voltage (Continuous dc)
(VD =6 Vdc, RL = 10 Ohms)
mA
V
IH
Holding Current (IT= 100 mA)
-
4
10
mA
IL
IG=1.2IGT
-
-
60
mA
Rd
Dynamic resistance
-
-
50
mΩ
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
2/5
Steady, keep you advance
WTPB8A60TW
Fig
Fig..1
Fig
Fig..3
Fig
Fig..5
Fig
Fig..2
Fig
Fig..4
Fig
Fig..6
3/5
Steady, keep you advance
WTPB8A60TW
Fig.7
Fig.8
Fig
Fig..9
gger Ch
aracteristics Test Cir
cuit
Fig.10 Gate Tri
rig
Cha
irc
4/5
2/5
Steady, keep you advance
WTPB8A60TW
20 Pack
age Dim
ension
TO-2
-22
cka
Dime
Unit: mm
5/5
Steady, keep you advance