MCK100-6 Sensi sittive Gate on Controlled Rec Silic ilico Recttifiers Features ■ Sensitive gate trigger current: IGT=200uA maximum ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM /IPRM=100uA@TC=125℃ ■ Low holding current: IH=5mA maximum General Description Sensitive triggering SCR is suitable for the application where gate current limited such as microcontrollers, logic integrated circuits, small motor control, gate driver for large SCR, sensing and detecting circuits. General purpose switching and phase control applications Absolute Maximum Ratings (Tj=25℃ unless otherwise specified) Symbol Parameter VDRM /VRRM Repetitive peak off-state voltage IT(RMS) RMS on-state current (180o conduction angles) (80o IT(AV) Average on-state current conduction angles ) ITSM Non repetitive surge peak on-state current I2t I²t Value for fusing PGM Peak gate power Note(1) Value Units 400 V TI=85℃ 0.8 A TI=85℃ 0.5 A tp = 8.3 ms 9 tp = 10 ms 8 tp = 8.3 ms 0.41 A2s 2 W TJ=125℃ 50 A/μs A Critical rate of rise of on-state current dI/dt ITM = 2A; IG = 10mA; dIG/dt = 100mA/µs PG(AV) Average gate power dissipation TJ=125℃ 0.1 W IFGM Peak gate current TJ=125℃ 1 A VRGM Peak gate voltage TJ=125℃ 5 V TJ, Junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ te1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may No Note1: switch to the on-state.The rate of rise of current should not exceed 15 A/µs. Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal resistance, Junction-to-Case - - 60 ℃/W RQJA Thermal resistance, Junction-to-Ambient - - 150 ℃/W Rev. A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. MCK100-6 Electrical Characteristics (TJ = 25°C, RGK = 1 kΩ unless otherwise specified) Characteristics Symbol IDRM/IRRM VTM IGT off-state leakage current Tc=25℃ (V AK= V Tc=125℃ DRM/V RRM) Forward “On” voltage (ITM = 1A tp = 380μs) (Note2.1) Gate trigger current (continuous dc) (Note2.2) (VAK = 7 Vdc, RL = 100 Ω) Gate Trigger Voltage (Continuous dc) VGT VGD Typ. Max - - 1 Unit μA 100 - 1.2 1.7 V 15 - 200 μA - - 0.8 V 0.2 - - V 500 800 - (Note2.2) (VAK = 7 Vdc, RL = 100 Ω) Gate threshold Voltage Min (Note2.1) Voltage Rate of Rise Off-State Voltage TJ=125℃ (VD=0.67VDRM ;exponential waveform) Gate open circuit dv/dt V/μs 25 IH Holding Current (VD = 12 V; IGT = 0.5 mA) - 2 5 mA IL latching current (VD = 12 V; IGT = 0.5 mA) - 2 6 mA Rd Dynamic resistance - - 245 mΩ TJ=125℃ Note 2.1 Pulse width≤1.0ms,duty cycle≤1% 2.2 RGK current is not included in measurement. 2/5 Steady, keep you advance MCK100-6 3/5 Steady, keep you advance MCK100-6 4/5 Steady, keep you advance MCK100-6 ge Dim ension SPT-89 Packa ckag Dime 5/5 Steady, keep you advance