SB30100LCT DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER VOLTAGE 100 Volts CURRENT 30 Ampers FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case : TO-220AB, Plastic • Terminals : Solderable per MIL-STD-750, Method 2026 • Weight: 0.0655 ounces, 1.859 grams .058(1.47) .042(1.07) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage SYMBOL VALUE UNIT VRRM 100 V Maximum average forward rectified current (Fig.1) per device per di ode I F(AV) 30 15 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per di ode I FSM 275 A EA S 300 mJ RθJ C 2 .5 TJ,TSTG -55 to + 150 Non-repetitive avalanche energy at TJ=25oC,L=60mH per diode Ty p i c a l T h e r m a l R e s i s t a n c e per di ode Operating junction and storage temperature range O C / W o C ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER SYMBOL Breakdown voltage per diode Instantaneous forward voltage per diode V BR (1) VF TEST CONDITIONS IR=1.0mA TYP. MAX. UNIT 103 120 - V IF=5A IF=7.5A IF=15A TA=25oC - 0.52 0.58 0.72 0.80 V IF=5A IF=7.5A IF=15A TA=125oC - 0.46 0.53 0.62 0.68 V - 10 - µA - - 500 32 µA mA VR=70V Reverse current per diode (2) MIN. IR o VR=100V TA=25 C TA=125oC Note.1 Pulse test : 300µs pulse width, 1% duty cycle 2. Pulse test : Pulse widh < 40ms PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.4-JUN.26.2009 STAD-AUG.04.2009 PAGE . 1 SB30100LCT 35 10000 Resistive or Inductive Load Junction Capacitance (pF) Average Forward Current (A) RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) 30 25 20 15 10 5 0 0 25 75 50 100 125 T J =25 oC f=1.0MHz Vsig=50mVp-p 1000 100 10 0.1 150 1 Case Temperature ( oC) 100 Reverse Voltage (V) Figure 1. Forward Current Derating Curve Figure 2. Typical Junction Capacitance 100 100 o T A =100 C 10 o T A =125 C o T A =75 C 1 o T A =25 C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Reverse Current (mA) Instantaneous Forward Current (A) 10 10 o T A =100 C 1 0.1 T A =25 oC 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode REV.0.4-JUN.26.2009 STAD-AUG.04.2009 PAGE . 2