PANJIT CBD20100LCT

CBD20100LCT
LOW VF SCHOTTKY RECTIFIER
VOLTAGE
100 Volts
20 Amperes
CURRENT
0.419(10.66)
0.387(9.85)
FEATURES
0.196(5.00)
0.163(4.16)
0.139(3.55)
MIN.
• Low forward voltage drop, low power losses
0.054(1.39)
0.045(1.15)
0.624(15.87)
0.548(13.93)
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
0.038(0.96)
0.019(0.50)
Weight: 0.0655 ounces, 1.859 grams.
0.100(2.54)
0.177(4.5)
MAX.
0.058(1.47)
0.042(1.07)
Terminals : Solderable per MIL-STD-750, Method 2026
0.115(2.92)
0.080(2.03)
0.50(12.7)MIN.
Case : TO-220AB, Plastic
0.025(0.65)MAX.
0.100(2.54)
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
SYMBOL
VALUE
UNIT
VRRM
100
V
Maximum average forward rectified current
per device
per diode
I F(AV)
20
10
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diode
I FSM
200
A
(Note 2)
(Note 1)
RΘJA
RΘJC
70
2.5
TJ
-55 to + 150
o
C
TSTG
-55 to + 150
o
C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
o
C/W
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
Breakdown voltage per diode
Instantaneous forward voltage per diode
TEST CONDITIONS
VBR
I R=1.0mA
VF
I F=3A
I F=5A
I F=10A
I F=3A
I F=5A
I F=10A
TJ=25oC
TJ=125oC
VR=70V
Reverse current per diode
IR
VR=100V
TJ=25oC
TJ=125oC
TYP.
MAX.
UNIT
100
-
V
0.50
0.60
0.76
0.46
0.54
0.63
0.80
0.66
25
-
μA
25
400
35
μA
mA
V
V
Note : 1. Mounted on heatsink (7.7cm x 7.7cm x 2pec) copper and areas.
2. Minimum pad for each lead on board.
December 29,2010-REV.00
PAGE . 1
12
Per Diode
10
8
6
4
2
0
0
25
50
75
100
125
150
TC, Case Temperature (°C)
Fig.1 Forward Current Derating Curve
CJ, Junction Capacitance (pF)
IF, Forward Current (A)
CBD20100LCT
IF, Forward Current (A)
IR,Reverse Current (mA)
10
1
TJ = 75°C
TJ = 100°C
0.1
0.01
Per Diode
TJ = 25°C
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Reverse Characteristics
December 29,2010-REV.00
100
10
1
0.1
1
10
100
VR, Reverse Bias Voltage (V)
100
TJ = 150°C
Per Diode
TJ = 125°C
10
TJ = 25°C
1
TJ = 75°C
0.1
0.001
20
Per Diode
1000
Fig.2 Typical Junction Capacitance
100
TJ = 125°C
10000
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VF, Forward Voltage (V)
Fig.4 Typical Forward Characteristics
PAGE . 2