CBD20100LCT LOW VF SCHOTTKY RECTIFIER VOLTAGE 100 Volts 20 Amperes CURRENT 0.419(10.66) 0.387(9.85) FEATURES 0.196(5.00) 0.163(4.16) 0.139(3.55) MIN. • Low forward voltage drop, low power losses 0.054(1.39) 0.045(1.15) 0.624(15.87) 0.548(13.93) • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.038(0.96) 0.019(0.50) Weight: 0.0655 ounces, 1.859 grams. 0.100(2.54) 0.177(4.5) MAX. 0.058(1.47) 0.042(1.07) Terminals : Solderable per MIL-STD-750, Method 2026 0.115(2.92) 0.080(2.03) 0.50(12.7)MIN. Case : TO-220AB, Plastic 0.025(0.65)MAX. 0.100(2.54) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage SYMBOL VALUE UNIT VRRM 100 V Maximum average forward rectified current per device per diode I F(AV) 20 10 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per diode I FSM 200 A (Note 2) (Note 1) RΘJA RΘJC 70 2.5 TJ -55 to + 150 o C TSTG -55 to + 150 o C Typical thermal resistance Operating junction temperature range Storage temperature range o C/W ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER SYMBOL Breakdown voltage per diode Instantaneous forward voltage per diode TEST CONDITIONS VBR I R=1.0mA VF I F=3A I F=5A I F=10A I F=3A I F=5A I F=10A TJ=25oC TJ=125oC VR=70V Reverse current per diode IR VR=100V TJ=25oC TJ=125oC TYP. MAX. UNIT 100 - V 0.50 0.60 0.76 0.46 0.54 0.63 0.80 0.66 25 - μA 25 400 35 μA mA V V Note : 1. Mounted on heatsink (7.7cm x 7.7cm x 2pec) copper and areas. 2. Minimum pad for each lead on board. December 29,2010-REV.00 PAGE . 1 12 Per Diode 10 8 6 4 2 0 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig.1 Forward Current Derating Curve CJ, Junction Capacitance (pF) IF, Forward Current (A) CBD20100LCT IF, Forward Current (A) IR,Reverse Current (mA) 10 1 TJ = 75°C TJ = 100°C 0.1 0.01 Per Diode TJ = 25°C 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Reverse Characteristics December 29,2010-REV.00 100 10 1 0.1 1 10 100 VR, Reverse Bias Voltage (V) 100 TJ = 150°C Per Diode TJ = 125°C 10 TJ = 25°C 1 TJ = 75°C 0.1 0.001 20 Per Diode 1000 Fig.2 Typical Junction Capacitance 100 TJ = 125°C 10000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VF, Forward Voltage (V) Fig.4 Typical Forward Characteristics PAGE . 2