SB2045LFCT DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER VOLTAGE 45 Volts CURRENT 20 Amperes FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : ITO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 .177(4.5) .137(3.5) Weight: 0.055 ounces, 1.5615 grams .027(.67) .022(.57) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER SYMBOL VALUE UNIT VRRM 45 V Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode I F(AV) 20 10 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per diode I FSM 145 A R ΘJC 4 .5 TJ -55 to + 125 o C TSTG -55 to + 150 o C Typ i c a l the r ma l r e s i s ta nc e Operating junction Storage temperature range O C / W ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Breakdown voltage VBR I R=1mA Instantaneous forward voltage per diode (1) VF I F=5A I F=10A TJ=25oC o Reverse current per diode (2) IR VR=45V TJ=25 C TJ=100oC MIN. TYP. MAX. UNIT 50 - - V - 0.42 0.46 0.46 0.52 V - 100 - 500 100 μA mA Note.1.Pulse test : 300μs pulse width, 1% duty cycle 2.Pulse test : pulse width < 40ms May 13,2010-REV.01 PAGE . 1 SB2045LFCT IR, Leakage Current (mA) IF, Forward Current (A) 100 Per Diode 10 TJ = 100°C TJ = 25°C TJ = 125°C 1 TJ = 75°C 100 Per Diode TJ = 100°C 10 1 0.1 TJ = 25°C 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 20 0.7 VF, Forward Voltage (V) 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics 10000 12.00 IF, Forward Current (A) CJ, Junction Capacitance (pF) 40 Per Diode 1000 100 10 Per Diode 10.00 8.00 6.00 4.00 2.00 0.00 0.1 1 10 VR, Reverse Bias Voltage (V) Fig.3 Typical Junction Capacitance May 13,2010-REV.01 100 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig.4 Forward Current Derating Curve PAGE . 2