SB2060LFCT DUAL LOW VF SCHOTTKY RECTIFIER CURRENT 20 Amperes FEATURES • Low forward voltage drop, low power losses 0.406(10.3) 0.381(9.7) 0.134(3.4) 0.118(3.0) • High efficiency operation 0.189(4.8) 0.165(4.2) 0.272(6.9) 0.248(6.3) 60 Volts 0.112(2.85) 0.100(2.55) VOLTAGE 0.606(15.4) 0.583(14.8) • In compliance with EU RoHS 2002/95/EC directives 0.130(3.3) 0.114(2.9) MECHANICAL DATA Case : ITO-220AB, Plastic Weight: 0.055 ounces, 1.5615 grams 0.177(4.5) 0.137(3.5) 0.055(1.4) 0.039(1.0) 0.055(1.4) 0.039(1.0) 0.028(0.7) 0.019(0.5) 0.114(2.9) 0.098(2.5) 0.543(13.8) 0.512(13.0) Terminals : Solderable per MIL-STD-750, Method 2026 0.027(0.67) 0.022(0.57) 0.100(2.55) 0.100(2.55) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER SYMBOL VALUE UNIT VRRM 60 V Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.4) per device per diode I F(AV) 20 10 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per diode I FSM 145 A R ΘJC 4 .5 TJ -55 to + 125 o TSTG -55 to + 150 o Typ i c a l the r ma l r e s i s ta nc e Operating junction Storage temperature range O C / W C C ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Breakdown voltage SYMBOL V BR Instantaneous forward voltage per diode (1) VF Reverse current per diode (2) IR TEST CONDITIONS I R=1mA MIN. TYP. MAX. UNIT 64 68 - V I F=5A I F=10A TJ=25oC - 0.44 0.51 0.51 0.60 V I F=5A I F=10A TJ=125oC - - 0.44 0.56 V VR=60V TJ=25oC TJ=100oC - - 0.5 20 mA Note.1.Pulse test : 380μs pulse width, 1% duty cycle 2.Pulse test : Pulse width < 2.5ms September 14,2010-REV.07 PAGE . 1 SB2060LFCT 100 IR,Reverse Current (mA) IF, Forward Current (A) 100 TJ = 100°C 10 TJ = 125°C TJ = 25°C 1 TJ = 75°C 0.1 TJ = 125°C 10 TJ = 100°C 1 0.1 TJ = 25°C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 20 VF, Forward Voltage (V) 1000 100 10 10 100 VR, Reverse Bias Voltage (V) Fig.3 Typical Junction Capacitance Per Diode September 14,2010-REV.07 80 100 Fig.2 Typical Reverse Characteristics Per Diode IF, Average Forward Current (A) CJ, Junction Capacitance (pF) 10000 1 60 Percent of Rated Peak Reverse Voltage (%) Fig.1 Typical Forward Characteristics Per Diode 0.1 40 12.00 10.00 8.00 6.00 4.00 2.00 0.00 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig.4 Forward Current Derating Curve Per Diode PAGE . 2