SB1040LCT DUAL LOW VF SCHOTTKY RECTIFIER VOLTAGE 40 Volts CURRENT 10 Amperes FEATURES • Low forward voltage drop, low power losses • High efficiency operation • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 .058(1.47) Weight: 0.065 ounces, 1.859 grams .042(1.07) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER SYMBOL VALUE UNIT VRRM 40 V Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.1) per device per diode I F(AV) 10 5 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per diode I FSM 125 A R ΘJC 2 .5 TJ -55 to + 125 o C TSTG -55 to + 150 o C Typ i c a l the r ma l r e s i s ta nc e Operating junction Storage temperature range O C / W ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Breakdown voltage SYMBOL V BR Instantaneous forward voltage per diode (1) VF Reverse current per diode (2) IR TEST CONDITIONS I R=1mA MIN. TYP. MAX. UNIT 47 - - V I F=2.5A I F=5A TJ=25oC - 0.38 0.41 0.44 V I F=2.5A I F=5A TJ=125oC - 0.27 0.32 0.35 V VR=40V TJ=25oC TJ=100oC - 185 - 500 30 μA mA Note.1.Pulse test : 300μs pulse width, 1% duty cycle 2.Pulse test : pulse width < 40ms April 30,2010-REV.00 PAGE . 1 100 100 IR, Leakage Current (mA) IF, Forward Current (A) SB1040LCT TJ = 100°C 10 TJ = 25°C TJ = 125°C 1 TJ = 75°C Per Diode 100°C 10 1 25°C 0.1 Per Diode 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 20 0.7 VF, Forward Voltage (V) 10000 Per Diode 1000 100 10 10 V R, Reverse Bias Voltage (V) Fig.3 Typical Junction Capacitance May 4,2010-REV.00 80 100 6.00 Per Diode 5.00 4.00 3.00 2.00 1.00 0.00 0 1 60 Fig.2 Typical Reverse Characteristics IF, Average Forward Current (A) CJ, Junction Capacitance (pF) Fig.1 Typical Forward Characteristics 0.1 40 Percent of Rated Peak Reverse Voltage (%) 25 50 75 100 125 150 100 TC, Case Temperature (°C) Fig.4 Forward Current Derating Curve PAGE . 2