PEREGRINE PE84244-01

PRELIMINARY SPECIFICATION
PE84244
Military Operating Temperature Range
Product Description
SPDT MOSFET RF Switch
The PE84244 MOSFET RF Switch is designed to cover a
broad range of applications from DC to 3.0 GHz. This switch
integrates on-board CMOS control logic with a low voltage
CMOS compatible control input. Using a +3-volt nominal
power supply voltage, a 1 dB compression point of +27 dBm
can be achieved. The PE84244 also exhibits excellent
isolation of 28 dB at 2.0 GHz and is offered in a small 8-lead
MSOP package.
Features
• Single +3.0-volt Power Supply
• Low Insertion loss: 0.70 dB up
to 2.0 GHz
• High isolation of 39 dB at 1.0
GHz, 28 dB at 2.0 GHz, typical
• Typical 1 dB compression of
+27 dBm
• Single-pin CMOS logic control
The PE4244 MOSFET RF Switch is manufactured in
Peregrine’s patented Ultra Thin Silicon (UTSi) CMOS
process, offering the performance of GaAs with the economy
and integration of conventional CMOS.
Figure 1. Functional Schematic Diagram
• Packaged in 8-lead MSOP
Figure 2. Package Type
RFCommon
RF1
RF2
8-lead
MSOP
CTRL
Table 1. Electrical Specifications -55 °C to +125 °C, VDD = 3 V (ZS = ZL = 50 Ω)
Parameter
Conditions
1
Operation Frequency
Minimum
Typical
DC
Units
3000
MHz
0.95
dB
Insertion Loss
2000 MHz
Isolation – RFCommon to
RF1/RF2
2000 MHz
25
28
dB
Isolation – RF1 to RF2
2000 MHz
24
27
dB
Return Loss
2000 MHz
18
25
dB
‘ON’ Switching Time
CTRL to 0.1 dB final value, 2 GHz
200
ns
‘OFF’ Switching Time
CTRL to 25 dB isolation, 2 GHz
90
ns
15
mVpp
Video Feedthrough
0.7
Maximum
2
Input 1 dB Compression
2000 MHz
25
27
dBm
Input IP3
2000 MHz, 14dBm
40
42
dBm
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a
50 Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
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Copyright  Peregrine Semiconductor Corp. 2003
Page 1 of 7
PE84244
Preliminary Specification
Figure 3. Pin Configuration
VDD
1
CTRL
2
GND
RFCommon
Table 4. DC Electrical Specifications
8
RF1
Parameter
Min
Typ
Max
Units
VDD Power Supply Voltage
2.7
3.0
3.3
V
250
500
nA
7
GND
IDD Power Supply Current
VDD = 3V, VCNTL = 3V
3
6
GND
Control Voltage High
4
5
RF2
PE84244
0.7xVDD
V
Control Voltage Low
0.3xVDD
V
Table 5. Control Logic Truth Table
Table 2. Pin Descriptions
Pin No.
Pin
Name
1
VDD
Control Voltage
Description
Nominal 3 V supply connection. A
bypass capacitor (100 pF) to the ground
plane should be placed as close as
possible to the pin
2
CTRL
CMOS logic level:
High = RFCommon to RF1 signal path
Low = RFCommon to RF2 signal path
3
GND
Ground connection. Traces should be
physically short and connected to ground
plane for best performance.
4
RF
Common
5
RF2
RF2 port (Note 1)
6
GND
Ground Connection. Traces should be
physically short and connected to ground
plane for best performance.
7
GND
Ground Connection. Traces should be
physically short and connected to ground
plane for best performance.
8
RF1
RF1 port (Note 1)
Common RF port for switch (Note 1)
Signal Path
CTRL = CMOS High
RFCommon to RF1
CTRL = CMOS Low
RFCommon to RF2
Electrostatic Discharge (ESD) Precautions
When handling this UTSi device, observe the same
precautions that you would use with other ESDsensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UTSi CMOS
devices are immune to latch-up.
Note 1: All RF pins must be DC blocked with an external
series capacitor or held at 0VDC.
Table 3. Absolute Maximum Ratings
Symbol
Parameter/Conditions
Min
Max
Units
VDD
Power supply voltage
-0.3
4.0
V
VI
Voltage on any input
-0.3
VDD+
0.3
V
TST
Storage temperature range
-65
150
°C
TOP
Operating temperature
range
-55
125
°C
30
dBm
1500
V
PIN
Input power (50Ω)
VESD
ESD voltage (Human Body
Model)
Copyright  Peregrine Semiconductor Corp. 2003
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File No. 70/0129~00A
| UTSi  CMOS RFIC SOLUTIONS
PE84244
Preliminary Specification
Typical Performance Data -55 °C to +125 °C (Unless Otherwise Noted)
Figure 4. Insertion Loss – RFC to RF1
Figure 5. Input 1 dB Compression Point & IIP3
0.0
60
-55°C
-55°C
IIP3
-0.3
25°C
Power (dBm)
Insertion Loss (dB)
50
-0.6
25°C
125°C
-0.9
40
125°C
30
-1.2
1dB Compression
-1.5
20
0
500
1000
1500
2000
2500
3000
0
500
1000
Frequency
Hz)
Frequency (M
(MHz)
1500
2000
2500
3000
Frequency (MHz)
(M Hz)
Frequency
Figure 7. Isolation – RFC to RF1
Figure 6. Insertion Loss – RFC to RF2
0.0
0
-55°C
-20
Isolation (dB)
Insertion Loss (dB)
-0.3
-0.6
25°C
125°C
-0.9
-1.2
125°C
-40
-55°C
-60
25°C
-80
-1.5
-100
0
500
1000
1500
2000
2500
3000
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0
500
1000
1500
2000
2500
3000
Frequency (M Hz)
Frequency (MHz)
Hz)
Frequency (M
(MHz)
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PE84244
Preliminary Specification
Typical Performance Data -55 °C to +125 °C (Unless Otherwise Noted)
Figure 9. Isolation – RF1 to RF2, RF2 to RF1
0
0
-20
-20
125°C
Isolation (dB)
Isolation (dB)
Figure 8. Isolation – RFC to RF2
-40
-55°C
-60
RF2
-40
RF1
-60
25°C
-80
-80
-100
-100
0
500
1000
1500
2000
2500
3000
0
500
1000
1500
2000
2500
3000
Frequency (M Hz)
Frequency (MHz)
Frequency (M
Hz)
Frequency
(MHz)
Figure 10. Return Loss – RFC to RF1, RF2
Figure 11. Return Loss – RF1, RF2
0
0
-5
-10
Return Loss (dB)
Return Loss (dB)
-10
-15
-20
RF2
RF1
-25
-20
RF1
RF2
-30
-30
-35
0
500
1000
1500
2000
Frequency (M Hz)
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2500
3000
-40
0
500
1000
1500
2000
2500
3000
Frequency
Hz)
Frequency(M
(MHz)
File No. 70/0129~00A
| UTSi  CMOS RFIC SOLUTIONS
PE84244
Preliminary Specification
Evaluation Kit Information
Figure 12. Evaluation Board Layouts
Evaluation Kit
The SPDT Switch Evaluation Kit board was
designed to ease customer evaluation of the
PE84244 SPDT switch. The RF common port is
connected through a 50Ω transmission line to the
top left SMA connector, J1. Port 1 and Port 2 are
connected through 50Ω transmission lines to the
top two SMA connectors on the right side of the
board, J3 and J4. A through transmission line
connects SMA connectors J6 and J8. This
transmission line can be used to estimate the loss
of the PCB over the environmental conditions
being evaluated.
The board is constructed of a two metal layer FR4
material with a total thickness of 0.031”. The
bottom layer provides ground for the RF
transmission lines. The transmission lines were
designed using a coplanar waveguide with ground
plane model using a trace width of 0.030”, trace
gaps of 0.007”, dielectric thickness of 0.028”,
metal thickness of 0.0014” and εr of 4.4.
J2 provides a means for controlling DC and digital
inputs to the device. Starting from the lower left
pin, the second pin to the right (J2-3) is connected
to the device CNTL input. The fourth pin to the
right (J2-7) is connected to the device VDD input.
A decoupling capacitor (100 pF) is provided on
both CNTL and VDD traces. It is the responsibility
of the customer to determine proper supply
decoupling for their design application. Removing
these components from the evaluation board has
not been shown to degrade RF performance.
Figure 13. Evaluation Board Schematic
J2-7
100 pF
VDD
RF1
CNTL
GND
GND
GND
RFC
RF2
J3
Optional
J2-3
100 pF
Optional
J1
J4
J6
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J8
Copyright  Peregrine Semiconductor Corp. 2003
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PE84244
Preliminary Specification
Figure 14. Package Drawing
8-lead MSOP
TOP VIEW
0.65BSC
.525BSC
8
7
6
5
2.45±0.10
2X
3.00±0.10
0.51±0.13
-B-
0.51±0.13
2
1
3
4
2.95±0.10
.25 A B C
-C0.86±0.08
2.95±0.10
1.10 MAX
-A0.10 A
0.33+0.07
-0.08
0.08
A B C
3.00±0.10
4.90±0.15
0.10±0.05
3.00±0.10
FRONT VIEW
SIDE VIEW
Table 6. Ordering Information
Order
Code
Part Marking
Description
Package
Shipping
Method
84244-01
84244
PE84244-08MSOP-50A
8-lead MSOP
50 units / Tube
84244-02
84244
PE84244-08MSOP-2000C
8-lead MSOP
2000 units / T&R
84244-00
PE84244-EK
PE84244-08MSOP-EK
Evaluation Kit
1 / Box
Copyright  Peregrine Semiconductor Corp. 2003
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File No. 70/0129~00A
| UTSi  CMOS RFIC SOLUTIONS