RUICHIPS RU60E6D

RU60E6D
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• 60V/6A,
RDS (ON) =32mΩ (Typ.) @ VGS=10V
RDS (ON) =40mΩ (Typ.) @ VGS=4.5V
• ESD Protected
• Reliable and Rugged
SOT-223
• Ultra Low On-Resistance
• Lead Free and Green Available
Applications
• Power Management
• DC-DC Converter
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TA=25°C
3
A
TA=25°C
24
A
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
②
Thermal Resistance-Junction to Ambient
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2011
TA=25°C
V
①
TA=70°C
6
5
TA=25°C
2.5
TA=70°C
1.6
50
A
W
°C/W
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RU60E6D
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU60E6D
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
③
VGS=0V, IDS=250µA
VDS= 60V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
V
60
30
1.5
2.0
µA
2.7
V
±10
µA
VGS= 10V, IDS=5.5A
32
40
mΩ
VGS= 4.5V, IDS=3A
40
60
mΩ
1
V
Diode Characteristics
VSD
③
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=1A, VGS=0V
40
ns
60
nC
VGS=0V,VDS=0V,F=1MHz
0.7
Ω
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
360
ISD=3A, dlSD/dt=100A/µs
④
Dynamic Characteristics
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
pF
44
24
8
VDD=30V, RL=10Ω,
IDS=3A, VGEN= 10V,
RG=25Ω
Turn-off Fall Time
18
ns
28
17
④
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
16
VDS=48V, VGS= 10V,
IDS=3A
3
20
nC
5
①Current limited by maximum junction temperature.
②When mounted on 1 inch square copper board, t ≤10sec.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2011
2
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RU60E6D
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Thermal Transient Impedance
ID - Drain Current (A)
Normalized Effective Transient
Safe Operation Area
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2011
Square Wave Pulse Duration (sec)
3
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RU60E6D
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (mΩ)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance (m)
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2011
Tj - Junction Temperature (°C)
4
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RU60E6D
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2011
QG - Gate Charge (nC)
5
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RU60E6D
Ordering and Marking Information
RU60E6
Package (Available)
D : SOT-223;
Operating Temperature Range
C : -55 to 150 ºC
Assembly Material
G : Green & Lead Free
Packaging
T : TUBE
TR : Tape & Reel
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2011
6
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RU60E6D
Package Information
SOT-223
SYMBOL
MM
INCH
MM
SYMBOL
INCH
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
A
1.520
1.800
0.060
0.071
E
3.300
3.700
0.130
0.146
A1
0.000
0.100
0.000
0.004
E1
6.830
7.070
0.269
0.278
A2
1.500
1.700
0.059
0.067
e
b
0.660
0.820
0.026
0.032
e1
4.500
4.700
0.177
0.185
c
0.250
0.350
0.010
0.014
L
0.900
1.150
0.035
0.045
D
6.200
6.400
0.244
0.252
θ
0°
10°
0°
10°
D1
2.900
3.100
0.114
0.122
2.300(BSC)
0.091(BSC)
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2011
7
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RU60E6D
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. A – MAY., 2011
8
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