SANKEN 2SA1725_07

2SA1725
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511)
V
50min∗
VCE=–4V, IC=–2A
IB
–3
A
VCE(sat)
IC=–2A, IB=–0.2A
–0.5max
V
PC
30(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
150
°C
COB
VCB=–10V, f=1MHz
150typ
pF
°C
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
Tstg
–55 to +150
1.35±0.15
1.35±0.15
2.54
■Typical Switching Characteristics (Common Emitter)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–30
10
–3
–10
5
–0.3
0.3
0.18typ
1.10typ
0.21typ
–20mA
–2
I B =–10mA
–1
0
–1
0
–2
–3
–1
I C =–6A
–2A
0
–4
0
–0.5
–1.0
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
300
Typ
100
50
125˚C
Transient Thermal Resistance
DC C urrent G ain h FE
D C Cur r ent Gai n h F E
300
–1
–0.5
0
25˚C
–30˚C
100
50
30
–0.02
–5 –6
–0.1
Collector Current I C (A)
–1.5
–0.5
–1
θ j-a – t Characteristics
5
1
0.5
0.4
1
–5 –6
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
–1
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–0.5
0
–1.5
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
–2
–4A
Collector-Emitter Voltage V C E (V)
30
–0.02
p)
–30mA
–4
Tem
–3
–2
se
–50mA
(Ca
–4
˚C
A
–8 0m A
125
–1 00 m
–5
(V CE =–4V)
–6
–3
Collector Current I C (A)
mA
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚C/W)
–
0
15
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
–2
A
Weight : Approx 2.0g
a. Part No.
b. Lot No.
B C E
V CE ( s a t ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
m
00
2.4±0.2
2.2±0.2
VCC
(V)
–6
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
mp)
Tj
ø3.3±0.2
a
b
e Te
hFE
4.0±0.2
A
µA
–80min
0.8±0.2
–6
–10max
±0.2
IC
VEB=–6V
IC=–25mA
4.2±0.2
2.8 c0.5
(Cas
V(BR)CEO
3.9
IEBO
V
10.1±0.2
)
V
–6
µA
–30˚C
–80
VEBO
–10max
emp
VCEO
VCB=–80V
se T
ICBO
(Ca
V
Unit
25˚C
–80
Ratings
16.9±0.3
Unit
VCBO
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
13.0min
Symbol
Ratings
8.4±0.2
■Electrical Characteristics
■Absolute maximum ratings (Ta=25°C)
Symbol
Application : Audio and General Purpose
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
30
–10
10
100ms
si
nk
–0.1
at
Without Heatsink
Natural Cooling
he
–0.5
ite
–1
20
fin
10
s
DC
In
20
m
ith
Collecto r Cur ren t I C (A)
–5
W
Cut -off Fre quen cy f T ( MH Z )
Typ
M aximum Po wer Dissipat io n P C (W)
–20
30
10
Without Heatsink
2
0
0.02
0.05 0.1
0.5
1
Emitter Current I E (A)
30
5 6
–0.05
–3
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150