2SA1294 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) ICBO VCB=–230V –100max µA V IEBO VEB=–5V –100max µA IC=–25mA –230min V –5 V V(BR)CEO IC –15 A hFE VCE=–4V, IC=–5A 50min∗ IB –4 A VCE(sat) IC=–5A, IB=–0.5A –2.0max V PC 130(Tc=25°C) W fT VCE=–12V, IE=2A 35typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 500typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), Y(70 to 140) 19.9±0.3 VEBO VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –500 500 0.35typ 1.50typ 0.30typ I B =–20mA 0 0 –1 –2 –3 –1 –5A 0 –4 0 Collector-Emitter Voltage V C E (V) –0.5 –1.0 –1.5 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 200 –0.5 –1 25˚C 100 –30˚C 50 10 –0.02 –5 –10 –15 Transient Thermal Resistance DC C urrent G ain h FE Typ 50 Collector Current I C (A) –0.1 –0.5 –1 –5 –10 –15 0.5 0.1 1 10 s he at si nk Collector Curr ent I C (A) ite Without Heatsink Natural Cooling fin –0.5 In –1 100 ith DC –5 W Ma ximum Po we r Dissipa ti on P C (W) m 50 –0.1 0 0.02 0.1 1 Emitter Current I E (A) 10 –0.05 –3 1000 2000 P c – T a Derating –10 20 100 Time t(ms) 130 10 p mp) 1 –40 Ty –2.5 3 Safe Operating Area (Single Pulse) 60 –2 θ j-a – t Characteristics (V C E =–12V) 40 –1 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) DC C urrent G ain h FE 125˚C –0.1 0 Base-Emittor Voltage V B E (V) (V C E =–4V) 10 –0.02 0 –2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 100 –5 I C =–10A eTe –50mA Cas –5 –10 mp ) emp ) –1 00 mA –2 (V C E =–4V) eTe A mA 200 –15 Cas – 0m – 3 ˚C ( –30 –10 1.4 E I C – V BE Temperature Characteristics (Typical) 125 mA 5.45±0.1 C V CE ( sat ) – I B Characteristics (Typical) θ j- a ( ˚ C/W) 00 0.65 +0.2 -0.1 Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current I C (A) A –5 Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (sa t) (V ) –3 .0A –2 .0 A .0 –1 2 3 B IC (A) 5A ø3.2±0.1 5.45±0.1 RL (Ω) . –1 2.0±0.1 1.05 +0.2 -0.1 VCC (V) –15 4.8±0.2 b ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) a seT Tstg 15.6±0.4 9.6 1.8 V 5.0±0.2 Unit (Ca –230 Ratings ˚C ( VCEO Conditions –30 –230 External Dimensions MT-100(TO3P) (Ta=25°C) Symbol 2.0 VCBO ■Electrical Characteristics 4.0 Unit 25˚C Ratings Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 20.0min LAPT Without Heatsink –10 –100 Collector-Emitter Voltage V C E (V) –300 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 15