2SA1908 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) –10max µA V IEBO VEB=–6V –10max µA –6 V V(BR)CEO –8 A hFE –120min 50min∗ V –3 A IC=–3A, IB=–0.3A –0.5max V PC 75(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 300typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –40 10 –4 –10 5 –0.4 0.4 0.14typ 1.40typ 0.21typ I B =–10mA 0 0 –1 –2 –3 –4 –4A 0 0 –0.2 –0.4 –0.6 –0.8 0 –1.0 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 300 DC Curr ent Gain h FE Typ 100 50 –0.5 –1 125˚C 25˚C 100 –30˚C 50 30 –0.02 –5 –8 Transient Thermal Resistance 200 –0.1 –0.5 –0.5 4 1 0.5 –1 –5 –8 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) –1.5 θ j-a – t Characteristics 0.2 –0.1 Collector Current I C (A) –1.0 Base-Emittor Voltage V B E (V) (V C E =–4V) 30 –0.02 0 Base Current I B (A) h FE – I C Characteristics (Typical) mp) –2A Collector-Emitter Voltage V C E (V) DC Curr ent Gain h FE –2 I C =–8A e Te –1 (Cas –2 –4 mp) –25mA –6 e Te –50mA –4 –2 Cas –7 5m A –6 ˚C ( mA E (V C E =–4V) 125 –100 C Weight : Approx 6.5g a. Part No. b. Lot No. –8 Collector Current I C (A) A θ j - a (˚C/W) –1 m 50 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m 50 Collector Current I C (A) –3 –2 A 3.35 1.5 I C – V BE Temperature Characteristics (Typical) –3 m 00 4.4 B V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 VCC (V) –8 0.8 2.15 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) 1.75 –30˚C Tstg mp) Tj ø3.3±0.2 a b 16.2 IB VCE(sat) 3.0 IC=–50mA VCE=–4V, IC=–3A 3.45 ±0.2 e Te IC 5.5±0.2 (Cas VEBO 25˚C –120 15.6±0.2 23.0±0.3 VCEO 0.8±0.2 VCB=–120V V 5.5 ICBO –120 1.6 Unit VCBO External Dimensions FM100(TO3PF) (Ta=25°C) Ratings Unit 3.3 Symbol Conditions Ratings 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 –10 Typ –10 –50 –100 –150 Collector-Emitter Voltage V C E (V) Collector Curr ent I C (A) nk –0.1 –5 si 36 8 40 at Emitter Current I E (A) 5 Without Heatsink Natural Cooling he 1 –0.5 ite 0.5 –1 60 fin 0.05 0.1 s In 10 m s ith 20 0 0.02 DC –5 10 0m W Cut-o ff Fr eque ncy f T ( MH Z ) 10 Ma xim um Powe r Dissipat io n P C (W) –20 30 20 3.5 0 Without Heatsink 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150