2SA1262 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) 2SA1262 Unit V ICBO VCB=–60V –100max µA V IEBO VEB=–6V –100max µA –6 V V(BR)CEO IC=–25mA –60min V –4 A hFE VCE=–4V, IC=–1A 40min VCEO –60 VEBO IC 10.2±0.2 –1 A VCE(sat) IC=–2A, IB=–0.2A –0.6max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.2A 15typ MHz Tj 150 °C COB VCB=–10V, f=1MHz 90typ pF –55 to +150 °C IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –20 10 –2 –10 5 –200 200 0.25typ 0.75typ 0.25typ I B =–5mA 0 –1 –2 –3 –4 –5 –6 –0.5 –0.1 –0.5 0 –1 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 500 100 50 –1 25˚C 100 –30˚C 50 20 –0.02 –4 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ –0.1 f T – I E Characteristics (Typical) –1 –4 ) 10 at si nk M aximum Po wer Dissipat io n P C (W) he 10 ite Without Heatsink Natural Cooling fin –0.5 20 In –1 ith s C W s D 0m Collector Cur rent I C (A) s m 10 20 1000 P c – T a Derating 1m 10 30 100 30 –5 Typ mp) (Cas e Tem p) emp 1 Time t(ms) –10 40 1 Safe Operating Area (Single Pulse) 50 –1.5 5 0.7 (V C E =–12V) 60 –1.0 θ j-a – t Characteristics Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (M H Z ) DC Curr ent Gain h F E 125˚C –0.5 –0.5 Base-Emittor Voltage V B E (V) (V C E =–4V) –0.1 0 Base Current I B (A) h FE – I C Characteristics (Typical) e Te –1A 0 –0.1 Collector-Emitter Voltage V C E (V) 20 –0.01 eT –1 I C =–3A –2A θ j- a ( ˚ C/W) 0 –0.5 –2 –30˚C –10mA –1 –3 Cas –20mA –2 –1.0 (Cas –30mA ˚C ( –40m A –3 (V C E =–4V) –4 –1.5 125 –50m A Weight : Approx 2.6g a. Type No. b. Lot No. Collector Current I C (A) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) –8 A 1.4 I C – V BE Temperature Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –4 2.5 B C E RL (Ω) –60m 1.35 2.5 VCC (V) A b 0.65 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 0m 2.0±0.1 ø3.75±0.2 a 25˚C Tstg 12.0min IB 4.8±0.2 3.0±0.2 –60 16.0±0.7 VCBO External Dimensions MT-25(TO220) (Ta=25°C) Conditions Unit 8.8±0.2 ■Electrical Characteristics Symbol 2SA1262 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 10 Without Heatsink 0 0.005 0.01 0.05 0.1 0.5 Emitter C urrent I E (A) 14 1 3 –0.1 –2 2 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150