SANKEN 2SA1909_07

2SA1909
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101)
ICBO
VCB=–140V
–10max
µA
V
IEBO
VEB=–6V
–10max
µA
–140min
IC=–50mA
VCE=–4V, IC=–3A
50min∗
V
–4
A
VCE(sat)
IC=–5A, IB=–0.5A
–0.5max
V
PC
80(Tc=25°C)
W
fT
VCE=–12V, IE=0.5A
20typ
MHz
150
°C
COB
VCB=–10V, f=1MHz
400typ
pF
–55 to +150
°C
Tj
Tstg
1.75
16.2
IB
ø3.3±0.2
a
b
3.0
hFE
3.3
V(BR)CEO
A
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
1.05 +0.2
-0.1
5.45±0.1
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
–60
12
–5
–10
5
–0.5
0.5
0.17typ
1.86typ
0.27typ
Collector Current I C (A)
–100
mA
–7 5m A
–6
–50mA
–4
–25mA
–2
I B =–10mA
0
–1
0
–2
–3
–4
–2
–1
0
0
–0.5
–1.0
–1.5
0
–2.0
0
–1
(V C E =–4V)
200
50
–1
–5
125˚C
100
25˚C
–30˚C
50
20
–0.02
–10
Transient Thermal Resistance
D C Cur r ent Gai n h F E
Typ
100
–0.1
θ j-a – t Characteristics
–0.5
–1
–5
–10
3
1
0.5
0.1
1
10
f T – I E Characteristics (Typical)
100
1000 2000
Time t(ms)
Collector Current I C (A)
Collector Current I C (A)
–1.5
Base-Emittor Voltage V B E (V)
h FE – I C Temperature Characteristics (Typical)
200
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =–12V)
80
he
40
at
si
nk
Collector Curr ent I C (A)
ite
Without Heatsink
Natural Cooling
fin
–0.5
In
–1
60
ith
s
C
W
D
0m
10
–5
ms
Typ
10
20
10
–10
M aximum Po wer Dissipation P C (W)
–30
30
Cu t-of f Fr eque ncy f T (MH Z )
DC Curr ent Gain h FE
–2
I C =–10A
(V C E =–4V)
–0.5
–4
Base Current I B (A)
h FE – I C Characteristics (Typical)
–0.1
–6
–5A
Collector-Emitter Voltage V C E (V)
30
–0.02
–8
p)
A
Tem
0m
(V C E =–4V)
(Ca
–15
–8
E
–10
˚C
A
125
–2
m
00
Collector Current I C (A)
A
θ j - a (˚C /W)
–3
m
00
Collector-Emitter Saturation Voltage V C E (s at) (V)
–4
A
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I C – V BE Temperature Characteristics (Typical)
–3
m
00
3.35
1.5
se
–10
4.4
B
V CE ( sat ) – I B Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
I C – V CE Characteristics (Typical)
0.8
2.15
)
V
–10
Temp
–6
IC
(Case
VEBO
3.45 ±0.2
–30˚C
–140
5.5±0.2
mp)
VCEO
15.6±0.2
e Te
V
(Cas
–140
25˚C
VCBO
0.8±0.2
Unit
5.5
Ratings
Symbol
External Dimensions FM100(TO3PF)
(Ta=25°C)
Conditions
Unit
1.6
■Electrical Characteristics
(Ta=25°C)
Ratings
9.5±0.2
Symbol
23.0±0.3
■Absolute maximum ratings
Application : Audio and General Purpose
20
Without Heatsink
0
0.02
0.1
1
Emitter Current I E (A)
10
–0.1
–3
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
37