2SA1909 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101) ICBO VCB=–140V –10max µA V IEBO VEB=–6V –10max µA –140min IC=–50mA VCE=–4V, IC=–3A 50min∗ V –4 A VCE(sat) IC=–5A, IB=–0.5A –0.5max V PC 80(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 400typ pF –55 to +150 °C Tj Tstg 1.75 16.2 IB ø3.3±0.2 a b 3.0 hFE 3.3 V(BR)CEO A ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2 -0.1 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) –60 12 –5 –10 5 –0.5 0.5 0.17typ 1.86typ 0.27typ Collector Current I C (A) –100 mA –7 5m A –6 –50mA –4 –25mA –2 I B =–10mA 0 –1 0 –2 –3 –4 –2 –1 0 0 –0.5 –1.0 –1.5 0 –2.0 0 –1 (V C E =–4V) 200 50 –1 –5 125˚C 100 25˚C –30˚C 50 20 –0.02 –10 Transient Thermal Resistance D C Cur r ent Gai n h F E Typ 100 –0.1 θ j-a – t Characteristics –0.5 –1 –5 –10 3 1 0.5 0.1 1 10 f T – I E Characteristics (Typical) 100 1000 2000 Time t(ms) Collector Current I C (A) Collector Current I C (A) –1.5 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 200 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =–12V) 80 he 40 at si nk Collector Curr ent I C (A) ite Without Heatsink Natural Cooling fin –0.5 In –1 60 ith s C W D 0m 10 –5 ms Typ 10 20 10 –10 M aximum Po wer Dissipation P C (W) –30 30 Cu t-of f Fr eque ncy f T (MH Z ) DC Curr ent Gain h FE –2 I C =–10A (V C E =–4V) –0.5 –4 Base Current I B (A) h FE – I C Characteristics (Typical) –0.1 –6 –5A Collector-Emitter Voltage V C E (V) 30 –0.02 –8 p) A Tem 0m (V C E =–4V) (Ca –15 –8 E –10 ˚C A 125 –2 m 00 Collector Current I C (A) A θ j - a (˚C /W) –3 m 00 Collector-Emitter Saturation Voltage V C E (s at) (V) –4 A C Weight : Approx 6.0g a. Part No. b. Lot No. I C – V BE Temperature Characteristics (Typical) –3 m 00 3.35 1.5 se –10 4.4 B V CE ( sat ) – I B Characteristics (Typical) 0.65 +0.2 -0.1 5.45±0.1 1.5 I C – V CE Characteristics (Typical) 0.8 2.15 ) V –10 Temp –6 IC (Case VEBO 3.45 ±0.2 –30˚C –140 5.5±0.2 mp) VCEO 15.6±0.2 e Te V (Cas –140 25˚C VCBO 0.8±0.2 Unit 5.5 Ratings Symbol External Dimensions FM100(TO3PF) (Ta=25°C) Conditions Unit 1.6 ■Electrical Characteristics (Ta=25°C) Ratings 9.5±0.2 Symbol 23.0±0.3 ■Absolute maximum ratings Application : Audio and General Purpose 20 Without Heatsink 0 0.02 0.1 1 Emitter Current I E (A) 10 –0.1 –3 –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 37