SAVANTIC 2SB1291

SavantIC Semiconductor
Product Specification
2SB1291
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Low saturation voltage
·Complement to type 2SD1720
·Excellent DC current gain characteristics
·Wide area of safe operation
APPLICATIONS
·For use in low frequency power amplifier
applications,power drivers and DC-DC
converters
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-5
A
ICM
Collector current-Peak
-10
A
PC
Collector power dissipation
TC=25
40
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1291
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA , IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA , IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50µA , IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-3A ;IB=-0.3A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-3A ;IB=-0.3A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V ;IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
µA
hFE
DC current gain
IC=-1A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
12
MHz
Cob
Output capacitance
IE=0 ; VCB=-10V ,f=1MHz
150
pF
hFE Classifications
E
F
100-200
160-320
2
MIN
TYP.
100
MAX
UNIT
320
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
2SB1291