Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation APPLICATIONS ・For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -5 A ICM Collector current-Peak -10 A PC Collector power dissipation TC=25℃ 30 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-50μA , IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA , IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-60V ;IE=0 -10 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz Cob Output capacitance IE=0 ; VCB=-10V ,f=1MHz 150 pF CONDITIONS hFE Classifications E F 100-200 160-320 2 MIN TYP. 100 MAX UNIT 320 Inchange Semiconductor Product Specification 2SB1292 Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3