SavantIC Semiconductor Product Specification 2SB1370 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·PC=2W(Ta=25 ) /30W(TC=25 ) ·Low collector saturation voltage ·Wide area of safe operation · PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A ICM Collector current-peak -6 A PC Collector power dissipation Ta=25 2.0 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1370 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50µA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -10 µA hFE DC current gain IC=-0.5A ; VCE=-5V Transition frequency IC=-0.5A; VCE=-5V 15 MHz Collector output capacitance f=1MHz ; VCB=10V 80 pF fT COB CONDITIONS 2 MIN TYP. 100 MAX UNIT 320 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1370