SavantIC Semiconductor Product Specification 2SD1591 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1100 APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 10 A ICM Collector current-Peak 15 A IB Base current (DC) 0.5 A PC Collector power dissipation Ta=25 2 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1591 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=25mA 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=25mA 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA ICEO Collector cut-off current VCE=100V; IE=0 500 µA IEBO Emitter cut-off current VEB=7V ;IC=0 5 mA hFE DC current gain IC=10A ; VCE=2V 2 MIN TYP. MAX 100 1000 UNIT V 30000 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SD1591