SAVANTIC 2SC1847

SavantIC Semiconductor
Product Specification
2SC1847
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SA886
·Low collector saturation
APPLICATIONS
·For medium output power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
50
V
VCEO
Collector-emitter voltage
Open base
40
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
1.5
A
ICM
Collector current-peak
3
A
1
1.2*
PC
Collector power dissipation
TC=25
W
2
5*
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
SavantIC Semiconductor
Product Specification
2SC1847
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=2mA;IB=0
40
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
50
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=20V; IE=0
1
µA
ICEO
Collector cut-off current
VCE=10V; IB=0
100
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE
DC current gain
IC=1A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=20V;f=1MHz
35
pF
fT
Transition frequency
IC=0.5A ; VCB=5V,f=200MHz
150
MHz
hFE Classifications
Q
R
80-160
120-220
2
MIN
TYP.
80
MAX
UNIT
220
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1847
SavantIC Semiconductor
Product Specification
2SC1847
Silicon NPN Power Transistors
4