Inchange Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1096/A ・High collector to emitter voltage VCEO APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage CHA IN Collector current ICM Collector current-peak Open emitter VALUE UNIT 70 V 50 Open base 2SC2497A Emitter-base voltage IC CONDITIONS C I M E S E NG 2SC2497 Collector- emitter voltage OND R O T UC V 60 Open collector 5 V 1.5 A 3 A 1.2*1 PD Total power dissipation W TC=25℃ 2 5* Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SC2497 MIN TYP. MAX UNIT 50 IC=2mA ; IB=0 V 60 2SC2497A V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.15A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.15A 1.5 V ICEO Collector cut-off current VCE=10V; IB=0 100 μA ICBO Collector cut-off current VCB=20V; IE=0 1 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V COB fT 体 导 半 固电 Output capacitance Transition frequency R IN 80-160 V R O T UC 80 OND IE=0 ; VCB=20V,f=1MHz C I M E SE G N A CH hFE Classifications 70 IE=0.5A ; VCB=5V,f=200MHz S 120-220 2 220 35 pF 150 MHz Inchange Semiconductor Product Specification 2SC2497 2SC2497A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC