Inchange Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA885 ・Low collector saturation APPLICATIONS ・For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 45 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 1 A ICM Collector current-peak 1.5 A 1.2*1 PC Collector power dissipation W TC=25℃ 2 5* Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=2mA;IB=0 35 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 45 V VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA 0.5 V ICBO Collector cut-off current VCB=20V; IE=0 0.1 μA ICEO Collector cut-off current VCE=20V; IB=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.5A ; VCE=10V 85 hFE-2 DC current gain IC=1A ; VCE=5V 50 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=50mA ; VCB=10V,f=200MHz CONDITIONS hFE-1 Classifications Q R S 85-170 120-240 170-340 2 MIN TYP. MAX UNIT 340 20 200 pF MHz Inchange Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC1846 Silicon NPN Power Transistors 4