JMNIC 2SA885

JMnic
Product Specification
2SA885
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SC1846
・Low collector-emitter saturation voltage
APPLICATIONS
・For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-45
V
VCEO
Collector-emitter voltage
Open base
-35
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-1
A
ICM
Collector current-peak
-1.5
A
1.2*1
PC
Collector power dissipation
W
TC=25℃
2
5*
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
JMnic
Product Specification
2SA885
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-2mA;IB=0
-35
V
V(BR)CBO
Collector-base breakdown voltage
IC=-10μA ;IE=0
-45
V
VCEsat
Collector-emitter saturation voltage
IC=-0.5A ;IB=-50mA
-0.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-0.1
μA
ICEO
Collector cut-off current
VCE=-20V; IB=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-10V
85
hFE-2
DC current gain
IC=-1A ; VCE=-5V
50
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
20
fT
Transition frequency
IC=50mA ; VCB=-10V,f=200MHz
200
‹
CONDITIONS
hFE-1 Classifications
Q
R
S
85-170
120-240
170-340
2
MIN
TYP.
MAX
UNIT
340
30
pF
MHz
JMnic
Product Specification
2SA885
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SA885
Silicon PNP Power Transistors
4
JMnic
Product Specification
2SA885
Silicon PNP Power Transistors
5