SavantIC Semiconductor Product Specification 2SB1430 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drivers and solenoid drivers In such as OA and FA equipment PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -10 A IB Base current -0.5 A PT Total power dissipation TC=25 20 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1430 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat MIN TYP. MAX UNIT IC=-2A ; IB=-2mA -1.5 V Base-emitter saturation voltage IC=-2A ; IB=-2mA -2.0 V ICBO Collector cut-off current VCB=-100V;IE=0 -1.0 µA IEBO Emitter cut-off current VEB=-7V;IC=0 -5.0 mA hFE-1 DC current gain IC=-2A ; VCE=-2V 2000 hFE-2 DC current gain IC=-4A ; VCE=-2V 500 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 60 pF fT Transition frequency IC=-0.5A ; VCE=-5V 80 MHz 0.5 µs 1.0 µs 1.0 µs 20000 Switching times ton Turn-on time tstg Storage time tf IC=-2A ; IB1=-IB2=-2mA VCC@-50V;RL=25A Fall time hFE-1 Classifications M L K 2000-5000 4000-10000 8000-20000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1430