SAVANTIC 2SB1430

SavantIC Semiconductor
Product Specification
2SB1430
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·High DC current gain.
·Low collector saturation voltage.
·DARLINGTON
APPLICATIONS
·Ideal for motor drivers and solenoid drivers
In such as OA and FA equipment
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-5
A
ICM
Collector current-peak
-10
A
IB
Base current
-0.5
A
PT
Total power dissipation
TC=25
20
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1430
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
Collector-emitter saturation voltage
VBEsat
MIN
TYP.
MAX
UNIT
IC=-2A ; IB=-2mA
-1.5
V
Base-emitter saturation voltage
IC=-2A ; IB=-2mA
-2.0
V
ICBO
Collector cut-off current
VCB=-100V;IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-7V;IC=0
-5.0
mA
hFE-1
DC current gain
IC=-2A ; VCE=-2V
2000
hFE-2
DC current gain
IC=-4A ; VCE=-2V
500
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
60
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
80
MHz
0.5
µs
1.0
µs
1.0
µs
20000
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-2A ; IB1=-IB2=-2mA
VCC@-50V;RL=25A
Fall time
hFE-1 Classifications
M
L
K
2000-5000
4000-10000
8000-20000
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1430