Inchange Semiconductor Product Specification 2SD235 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SB435 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 6 V 3 A IC Collector current PC Collector power dissipation 1.5 W TC=25℃ 25 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD235 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ,IB=0 40 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 50 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ,IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1A; IB=50mA 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=50mA 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 10 μA hFE DC current gain IC=0.5A ; VCE=1V COB Output capacitance IE=0 ; VCB=10V,f=1MHz 90 pF fT Transition frequency IC=0.5A ; VCE=10V 3 MHz CONDITIONS hFE Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. 40 MAX UNIT 240 Inchange Semiconductor Product Specification 2SD235 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3